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The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-field-diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage.
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Keywords:
- InAlAs/GaSbAs /
- InP/GaSbAs /
- II-type DHBT
[1] Qin Z H, Li X J 2009 Semiconductor Technology 34 721 (in Chinese) [齐志华, 李献杰 2009 半导体技术 34 721]
[2] Bolognesi C R, Dvorak M M W, Yeo P, Xu X G, Watkins S P 2001 IEEE Transactions on Electron Devices 48 2631
[3] Lye B C, Houlston P A, Yow H K, Button C C 1998 IEEE Trans Electron Devices 45 2417
[4] Lovblom R, Fluckiger R, Zeng Yuping, Ostinelli O, Alt A R, Benedickter H, Bolognesi C R 2011 IEEE Electron Device Letters 32 629
[5] Teppati V, Zeng Yuping, Ostinelli O, Bolognesi C R 2011 IEEE Electron Device Letters 32 886
[6] Chang Y H, Syu R H 2010 Microelectronics Reliability 50 70
[7] Zeng Y P, Ostinelli O, Liu H G, Bolognesi C R 2008 Solid-State Electronics 52 1202
[8] Tao N G, Liu H G, Bolognesi C R 2007 Solid-State Electronics 51 995
[9] Pana C T, Wanga C M, Hsina Y M, Zhub H J, Kuob J M, Kaob Y C 2009 Solid-State Electronics 53 574
[10] Garcia-Loureiro A J, Lopez-Gonzalez J M 2004 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17 29
[11] Yang K, East J R, Haddad H I 1993 Solid-State Electron 36 321
[12] Zhou S L, Ren X M 2008 Chinese Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[13] J M Lopez 1997 IEEE Trans. Electron Devices 44 1046
[14] Zhou S L, Cui H L, Huang Y Q, Ren X M 2006 Chinese Journal of Semiconductors 27 110 (in Chinese) [周守利, 崔海林, 黄永清, 任晓敏 2006 半导体学报 27 110]
[15] Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Physica Sinica 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[16] Lee J M, Lee T W, Park S H, Minb B G, Parkb M P, Leeb KH, Choia I H 2001 Mater. Sci. Engineering B 79 63
[17] Yi C G, Kim T H, Brown A S 2002 Journal of Electronic Materials 31 95
[18] Oon Sim Ang 1990 MS Thesis (Vancouver of Canada: The University of British Columbia)
[19] Yi C H 2002 Ph. D. Dissertation (Atlanta of USA: Georgia Institute of Technology)
[20] Gao G B, Fan Z F, Morkoc H 1992 Appl. Phys. Lett. 61 198
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[1] Qin Z H, Li X J 2009 Semiconductor Technology 34 721 (in Chinese) [齐志华, 李献杰 2009 半导体技术 34 721]
[2] Bolognesi C R, Dvorak M M W, Yeo P, Xu X G, Watkins S P 2001 IEEE Transactions on Electron Devices 48 2631
[3] Lye B C, Houlston P A, Yow H K, Button C C 1998 IEEE Trans Electron Devices 45 2417
[4] Lovblom R, Fluckiger R, Zeng Yuping, Ostinelli O, Alt A R, Benedickter H, Bolognesi C R 2011 IEEE Electron Device Letters 32 629
[5] Teppati V, Zeng Yuping, Ostinelli O, Bolognesi C R 2011 IEEE Electron Device Letters 32 886
[6] Chang Y H, Syu R H 2010 Microelectronics Reliability 50 70
[7] Zeng Y P, Ostinelli O, Liu H G, Bolognesi C R 2008 Solid-State Electronics 52 1202
[8] Tao N G, Liu H G, Bolognesi C R 2007 Solid-State Electronics 51 995
[9] Pana C T, Wanga C M, Hsina Y M, Zhub H J, Kuob J M, Kaob Y C 2009 Solid-State Electronics 53 574
[10] Garcia-Loureiro A J, Lopez-Gonzalez J M 2004 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17 29
[11] Yang K, East J R, Haddad H I 1993 Solid-State Electron 36 321
[12] Zhou S L, Ren X M 2008 Chinese Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[13] J M Lopez 1997 IEEE Trans. Electron Devices 44 1046
[14] Zhou S L, Cui H L, Huang Y Q, Ren X M 2006 Chinese Journal of Semiconductors 27 110 (in Chinese) [周守利, 崔海林, 黄永清, 任晓敏 2006 半导体学报 27 110]
[15] Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Physica Sinica 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[16] Lee J M, Lee T W, Park S H, Minb B G, Parkb M P, Leeb KH, Choia I H 2001 Mater. Sci. Engineering B 79 63
[17] Yi C G, Kim T H, Brown A S 2002 Journal of Electronic Materials 31 95
[18] Oon Sim Ang 1990 MS Thesis (Vancouver of Canada: The University of British Columbia)
[19] Yi C H 2002 Ph. D. Dissertation (Atlanta of USA: Georgia Institute of Technology)
[20] Gao G B, Fan Z F, Morkoc H 1992 Appl. Phys. Lett. 61 198
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