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异质结界面电荷的存在改变了异质结的内建势, 这引起了界面势垒尖峰高度和形状的扰动, 从而使异质结界面载流子的输运产生相应的变化, 最终导致异质结双极晶体管 (HBT) 性能的改变. 基于热场发射-扩散模型, 对异质结界面电荷对InP/InGaAs HBT性能的改变做了研究, 得到结论是正极性的界面电荷有利于InP/InGaAs HBT的直流和高频特性的改善, 而负极性的界面电荷则使器件的直流和高频特性变差.
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关键词:
- InP/InGaAs异质结双极晶体管 /
- 界面电荷 /
- 内建势 /
- 热场发射
The carriers transport at the base-emitter interface of abrupt heterojunction bipolar transistors (HBTs) is controlled by thermionic emission and tunneling, which depends on the form and height of the energy barriers. The interface charges at the heterojunction disturb the energy barriers, thus bringing about the change of the electrical characteristics of HBT. Based on thermionic-field-diffusion model which combines the drift-diffusion transport in the bulk of the transistor with the thermionic emission and tunneling at the interface, a conclusion can be drawn that the positive interface charges can improve the electrical characteristics of abrupt InP/InGaAs HBT, while the negative interface charges deteriorate the devices.-
Keywords:
- InP/InGaAs HBT /
- interface charges /
- built-in potential /
- thermionic emission and tunneling
[1] Cui H L, Ren X M, Huang H 2012 Journal of Optoelectronics Laser 23 1067 (in Chinese) [崔海林, 任晓敏, 黄辉 2012 光电子·激光 23 1067]
[2] Xu A H, Zou L, Chen X J, Qi M 2004 Chinese Journal of Rare Metals 28 516 (in Chinese) [徐安怀, 邹璐, 陈晓杰, 齐鸣 2004 稀有金属 28 516]
[3] Jung H T, Wen S L, Chao Y T, Ye S S, Ma Y C, Jhou J C, Wu Y R, Ouyang J J 2012 Thin Solid Films 521 172
[4] Liu H G, Jin Z, Su Y B, Wang X T, Chang H D, Zhou L, Liu X Y, Wu D X 2010 Chin. Phys. Lett. 27 058502
[5] Chen T P, Lee C J, Chen L Y, Tsai T H, Liu Y J, Huang C C, Chen T Y, Cheng S Y, Liu W C 2009 Superlattices and Microstructures 46 715
[6] Eladl S M 2008 Microelectronics Journal 39 1649
[7] Gourab D, Sukla B 2012 Journal of semiconductors 33 054002
[8] Fuente J G, Viktor K 2002 Solid-State Electronics 46 1273
[9] Yang K, East J R, Haddad G I 1994 IEEE Trans Electron Devices 41 138
[10] Zhou S L, Ren X M 2008 Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[11] Zhou S L, Yang W C, Ren H L, Li J 2012 Acta Phys. Sin. 61 128501 (in Chinese) [周守利, 杨万春, 任宏亮, 李伽 2012 61 128501]
[12] Zhang Y R, Zhang B, Li Z J, Deng X C 2010 Chin. Phys. B 19 067102
[13] Jain S C, Roulston D J 1991 Solid-State Electronics 34 453
[14] Leeor K, Yoram S 1999 Surface Science Reports 37 1
[15] Se W K, Kang S R, Seung H S, Kwan Y K, Gu C K, Lee S Y, Chang M C, So R P, Jun H P, Ki C C, Song K J, Kim D H, Dong M K 2008 Microelectronics Reliability 48 382
[16] Kaipa P K, Amitava D 1998 Solid-State Electronics 42 1779
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[1] Cui H L, Ren X M, Huang H 2012 Journal of Optoelectronics Laser 23 1067 (in Chinese) [崔海林, 任晓敏, 黄辉 2012 光电子·激光 23 1067]
[2] Xu A H, Zou L, Chen X J, Qi M 2004 Chinese Journal of Rare Metals 28 516 (in Chinese) [徐安怀, 邹璐, 陈晓杰, 齐鸣 2004 稀有金属 28 516]
[3] Jung H T, Wen S L, Chao Y T, Ye S S, Ma Y C, Jhou J C, Wu Y R, Ouyang J J 2012 Thin Solid Films 521 172
[4] Liu H G, Jin Z, Su Y B, Wang X T, Chang H D, Zhou L, Liu X Y, Wu D X 2010 Chin. Phys. Lett. 27 058502
[5] Chen T P, Lee C J, Chen L Y, Tsai T H, Liu Y J, Huang C C, Chen T Y, Cheng S Y, Liu W C 2009 Superlattices and Microstructures 46 715
[6] Eladl S M 2008 Microelectronics Journal 39 1649
[7] Gourab D, Sukla B 2012 Journal of semiconductors 33 054002
[8] Fuente J G, Viktor K 2002 Solid-State Electronics 46 1273
[9] Yang K, East J R, Haddad G I 1994 IEEE Trans Electron Devices 41 138
[10] Zhou S L, Ren X M 2008 Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[11] Zhou S L, Yang W C, Ren H L, Li J 2012 Acta Phys. Sin. 61 128501 (in Chinese) [周守利, 杨万春, 任宏亮, 李伽 2012 61 128501]
[12] Zhang Y R, Zhang B, Li Z J, Deng X C 2010 Chin. Phys. B 19 067102
[13] Jain S C, Roulston D J 1991 Solid-State Electronics 34 453
[14] Leeor K, Yoram S 1999 Surface Science Reports 37 1
[15] Se W K, Kang S R, Seung H S, Kwan Y K, Gu C K, Lee S Y, Chang M C, So R P, Jun H P, Ki C C, Song K J, Kim D H, Dong M K 2008 Microelectronics Reliability 48 382
[16] Kaipa P K, Amitava D 1998 Solid-State Electronics 42 1779
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