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中国物理学会期刊
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Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2011, 60(4): 044402. DOI: 10.7498/aps.60.044402
Citation: Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2011, 60(4): 044402. DOI: 10.7498/aps.60.044402
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Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor

Acta Phys. Sin., 2011, 60(4): 044402.
DOI: 10.7498/aps.60.044402
CSTR: 32037.14.aps.60.044402
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