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An InGaAsP-InP transistor laser (TL) working at 1.5 μm and its epitaxy structure with MQW active layer buried between unsymmetrical upper and lower waveguides in base region has been designed and modeled. The simulation result shows that the proposed TL has good optical and lateral electrical current confinement. The result of epitaxial experiment by metalorganic chemical vapor deposition (MOCVD) shows that the diffusion of doped Zn2+ from heavily doped base contactor layer to active waveguide can induce serious degradation of quantum wells. By modeling the Zn2+ diffusion from heavily doped base contactor layer, a gradient doping profile with an average doping density of 1 ( 1018 cm-3 in the base contact layer has been used in the epitaxy process to constrain the Zn2+ diffusion to quantum wells. The test result of the epitaxy material has demonstrated high PL intensity at 1.51 μm and clear satellite diffraction peaks in the XRD spectrum.
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Keywords:
- transistor laser /
- epitaxy structure /
- dopant diffusion /
- quantum well degradation
[1] Holonyak Jr N, Feng M 2006 IEEE Spectrum 43 50
[2] Faraji B, Shi W, Pulfrey D, Chrostowski L 2009 IEEE J. Quant. Elect. 15 594
[3] Faraji B, Shi W, Pulfrey D, Chrostowski L 2008 Appl. Phys. Lett. 93 143503
[4] Shi W, Chrosdowski L, Faraji B 2008 IEEE Phot. Tech. Lett. 20 2141
[5] Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese) [周守利、黄光辉、黄永清等 2007 56 2890]
[6] Huang Y, Ryou J H, Dupuis R D 2008 J. Crys. Grow. 310 4345
[7] Katz A, Thomas P M, Chu S N G, Dautremont-Smith W C, Sobers R G, Napholtz S G 1990 J. Appl. Phys. 67 884
[8] Yamaguchi A, Asamizu H, Okada T, Iguchi Y, Saitoh T, Koide Y, Murakami M 2000 J. Vac. Sci. Tech. B 18 1957
[9] Jian P, Ivey D, Bruce G R, Knight G 1996 J. Mat. Sci.: Mat. in Elect. 7 77
[10] Feng M, Holonyak Jr N, Then H W, Wu C H, Walter G 2009 Appl. Phys. Lett. 94 041118
[11] Feng M, Holonyak Jr N, Walter G, Chan R 2005 Appl. Phys. Lett. 87 131103
[12] Dixon F, Feng M, Holonyak Jr N, Huang Y, Zhang X B, Ryou H, Dupuis R D 2008 App. Phys. Lett. 93 021111
[13] Piprek J, Abraham P, Bowers J E 2000 IEEE J. Quant. Elect. 36 366
[14] Li Z M 1997 Proc. SPIE 2994 698
[15] Hadley G R, Lear K L, Warren M E, Choquette K T, Scott J W, Corzine S W 1996 IEEE J. Quant. Elect. 32 607
[16] Amarnath K, Grover R, Kanakaraju S, Ho P T 2005 IEEE Phot. Tech. Lett. 17 2280
[17] Liou B T, Yen M W, Chen M L, Kuo Y K K, Chang S H 2006 Proc. SPIE 6368 636814
[18] Joindot I, Beylat J L 1993 Elect. Lett. 29 604
[19] Huang X D, Huang D X, Liu X F, 2000 J. Semicond. 21 1107 (in Chinese)[黄晓东、黄德修、刘雪峰 2000 半导体学报 21 1107]
[20] Huang X D, Huang D X, Liu X F 2000 Chinese Journal of Lasers A28 25(in Chinese)[黄晓东、黄德修、刘雪峰 2000 中国激光 A28 25]
[21] Michael P C, Michael D. D, James D P 1997 J. Appl. Phys. 81 1670
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[1] Holonyak Jr N, Feng M 2006 IEEE Spectrum 43 50
[2] Faraji B, Shi W, Pulfrey D, Chrostowski L 2009 IEEE J. Quant. Elect. 15 594
[3] Faraji B, Shi W, Pulfrey D, Chrostowski L 2008 Appl. Phys. Lett. 93 143503
[4] Shi W, Chrosdowski L, Faraji B 2008 IEEE Phot. Tech. Lett. 20 2141
[5] Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese) [周守利、黄光辉、黄永清等 2007 56 2890]
[6] Huang Y, Ryou J H, Dupuis R D 2008 J. Crys. Grow. 310 4345
[7] Katz A, Thomas P M, Chu S N G, Dautremont-Smith W C, Sobers R G, Napholtz S G 1990 J. Appl. Phys. 67 884
[8] Yamaguchi A, Asamizu H, Okada T, Iguchi Y, Saitoh T, Koide Y, Murakami M 2000 J. Vac. Sci. Tech. B 18 1957
[9] Jian P, Ivey D, Bruce G R, Knight G 1996 J. Mat. Sci.: Mat. in Elect. 7 77
[10] Feng M, Holonyak Jr N, Then H W, Wu C H, Walter G 2009 Appl. Phys. Lett. 94 041118
[11] Feng M, Holonyak Jr N, Walter G, Chan R 2005 Appl. Phys. Lett. 87 131103
[12] Dixon F, Feng M, Holonyak Jr N, Huang Y, Zhang X B, Ryou H, Dupuis R D 2008 App. Phys. Lett. 93 021111
[13] Piprek J, Abraham P, Bowers J E 2000 IEEE J. Quant. Elect. 36 366
[14] Li Z M 1997 Proc. SPIE 2994 698
[15] Hadley G R, Lear K L, Warren M E, Choquette K T, Scott J W, Corzine S W 1996 IEEE J. Quant. Elect. 32 607
[16] Amarnath K, Grover R, Kanakaraju S, Ho P T 2005 IEEE Phot. Tech. Lett. 17 2280
[17] Liou B T, Yen M W, Chen M L, Kuo Y K K, Chang S H 2006 Proc. SPIE 6368 636814
[18] Joindot I, Beylat J L 1993 Elect. Lett. 29 604
[19] Huang X D, Huang D X, Liu X F, 2000 J. Semicond. 21 1107 (in Chinese)[黄晓东、黄德修、刘雪峰 2000 半导体学报 21 1107]
[20] Huang X D, Huang D X, Liu X F 2000 Chinese Journal of Lasers A28 25(in Chinese)[黄晓东、黄德修、刘雪峰 2000 中国激光 A28 25]
[21] Michael P C, Michael D. D, James D P 1997 J. Appl. Phys. 81 1670
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