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In this paper we establish a three-dimensional (3D) numerical simulation model of domestic SiGe heterojunction bipolar transistor (SiGe HBT) by using technology computer aided design tools, to study the bias effect on single event effect (SEE) of SiGe HBT. The response relationship between SEE and the bias of SiGe HBT is identified based on the analyses of transient current peak and charge collection of each terminal. The results show that the worst biases for SEE are different for different terminals. Even for the same terminal, the worst biases for charge collection and transient current peak are different. This phenomenon is caused mainly by the influence of applied electric field and the change of carrier transport mode.
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Keywords:
- SiGe heterojunction bipolar transistor /
- different bias /
- single event effect /
- 3D numerical simulation
[1] Marshall P W, Carts M A, Campbell A 2000 IEEE Trans. Nucl. Sci. 47 2669
[2] Cressler J D 2005 Proc. IEEE 93 1559
[3] Cressler J D 2010 NASA NEPP Electronics Technology Workshop
[4] Cressler J D, Niu G F 2003 Silicon-Germanium Heterojunction Bipolar Transistors (1st Ed.) (Boston London: Artech House) p20
[5] Diestelhorst R M 2009 M. S. Dissertation (Georgia: Georgia Institute of Technology)
[6] Chai C C, Ma Z Y, Ren X R, Yang Y T, Zhao Y B, Xin H 2013 Chin. Phys. B 22 068502
[7] Guo Y, Chen J J, He Y B, Liang B, Liu B W 2013 Chin. Phys. B 22 046103
[8] Sutton A K, Prakash A P G, Jun B, et al. 2006 IEEE Trans. Nucl. Sci. 53 3166
[9] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Song K, Zhao Y B 2012 Chin. Phys. B 21 098502
[10] Bellini M 2009 Ph. D. Dissertation (Georgia: Georgia Institute of Technology)
[11] Hu H Y, Shu J, Zhang H M, Song J J, Xuan R X, Qin S S, Qu J T 2011 Acta Phys. Sin. 60 017303 (in Chinese) [胡辉勇, 舒钰, 张鹤鸣, 宋建军, 宣荣喜, 秦珊珊, 屈江涛 2011 60 017303]
[12] Zhao X, Zhang W R, Jin D Y, Fu Q, Chen L, Xie H Y, Zhang Y J 2012 Acta Phys. Sin. 61 134401 (in Chinese) [赵昕, 张万荣, 金冬月, 付强, 陈亮, 谢红云, 张瑜洁 2012 61 134401]
[13] Akil K S 2005 Ph. D. Dissertation (Georgia: Georgia Institute of Technology)
[14] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[15] Zhang J X, Guo H X, Wen L, Guo Q, Cui J W, Wang X, Deng W, Zhen Q W, Fan X, Xiao Y 2014 J. Semicond. 35 044354
[16] Varadharajaperumal M 2010 Ph. D. Dissertation (Alabama: Auburn University)
[17] Xu Z Y, Niu G F, Luo L, Cressler J D, Alles M L, Reed R A, Mantooth H A, Holmes J, Marshall P W 2010 IEEE Tran. Nucl. Sci. 57 3206
[18] Liang B, Chen S M, Liu B W 2008 J. Semiconductors 29 1692
[19] Dodd P E, Massengill L W 2003 IEEE Trans. Nucl. Sci. 50 583
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[1] Marshall P W, Carts M A, Campbell A 2000 IEEE Trans. Nucl. Sci. 47 2669
[2] Cressler J D 2005 Proc. IEEE 93 1559
[3] Cressler J D 2010 NASA NEPP Electronics Technology Workshop
[4] Cressler J D, Niu G F 2003 Silicon-Germanium Heterojunction Bipolar Transistors (1st Ed.) (Boston London: Artech House) p20
[5] Diestelhorst R M 2009 M. S. Dissertation (Georgia: Georgia Institute of Technology)
[6] Chai C C, Ma Z Y, Ren X R, Yang Y T, Zhao Y B, Xin H 2013 Chin. Phys. B 22 068502
[7] Guo Y, Chen J J, He Y B, Liang B, Liu B W 2013 Chin. Phys. B 22 046103
[8] Sutton A K, Prakash A P G, Jun B, et al. 2006 IEEE Trans. Nucl. Sci. 53 3166
[9] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Song K, Zhao Y B 2012 Chin. Phys. B 21 098502
[10] Bellini M 2009 Ph. D. Dissertation (Georgia: Georgia Institute of Technology)
[11] Hu H Y, Shu J, Zhang H M, Song J J, Xuan R X, Qin S S, Qu J T 2011 Acta Phys. Sin. 60 017303 (in Chinese) [胡辉勇, 舒钰, 张鹤鸣, 宋建军, 宣荣喜, 秦珊珊, 屈江涛 2011 60 017303]
[12] Zhao X, Zhang W R, Jin D Y, Fu Q, Chen L, Xie H Y, Zhang Y J 2012 Acta Phys. Sin. 61 134401 (in Chinese) [赵昕, 张万荣, 金冬月, 付强, 陈亮, 谢红云, 张瑜洁 2012 61 134401]
[13] Akil K S 2005 Ph. D. Dissertation (Georgia: Georgia Institute of Technology)
[14] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[15] Zhang J X, Guo H X, Wen L, Guo Q, Cui J W, Wang X, Deng W, Zhen Q W, Fan X, Xiao Y 2014 J. Semicond. 35 044354
[16] Varadharajaperumal M 2010 Ph. D. Dissertation (Alabama: Auburn University)
[17] Xu Z Y, Niu G F, Luo L, Cressler J D, Alles M L, Reed R A, Mantooth H A, Holmes J, Marshall P W 2010 IEEE Tran. Nucl. Sci. 57 3206
[18] Liang B, Chen S M, Liu B W 2008 J. Semiconductors 29 1692
[19] Dodd P E, Massengill L W 2003 IEEE Trans. Nucl. Sci. 50 583
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