| [1] |
Duan Bao-Xing, Liu Yu-Lin, Tang Chun-Ping, Yang Yin-Tang. Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction. Acta Physica Sinica,
2024, 73(7): 078501.
doi: 10.7498/aps.73.20231768
|
| [2] |
Huang Xin-Yu, Zhang Jin-Xin, Wang Xin, Lü Ling, Guo Hong-Xia, Feng Juan, Yan Yun-Yi, Wang Hui, Qi Jun-Xiang. Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures. Acta Physica Sinica,
2024, 73(12): 126103.
doi: 10.7498/aps.73.20240307
|
| [3] |
Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica,
2022, 71(5): 058502.
doi: 10.7498/aps.71.20211795
|
| [4] |
Guo Chun-Sheng, Ding Yan, Jiang Bo-Yang, Liao Zhi-Heng, Su Ya, Feng Shi-Wei. High-efficiency on-line measurement of junction temperature based on bipolar transistors in accelerated experiment. Acta Physica Sinica,
2017, 66(22): 224703.
doi: 10.7498/aps.66.224703
|
| [5] |
Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin. Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2015, 64(11): 118502.
doi: 10.7498/aps.64.118502
|
| [6] |
Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica,
2014, 63(22): 226101.
doi: 10.7498/aps.63.226101
|
| [7] |
Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2014, 63(24): 248503.
doi: 10.7498/aps.63.248503
|
| [8] |
Liu Jing, Guo Fei, Gao Yong. Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica,
2014, 63(4): 048501.
doi: 10.7498/aps.63.048501
|
| [9] |
Zhang Geng-Ming, Guo Li-Qiang, Zhao Kong-Sheng, Yan Zhong-Hui. Effect of oxygen on stability performance of the IZO junctionless thin film transistors. Acta Physica Sinica,
2013, 62(13): 137201.
doi: 10.7498/aps.62.137201
|
| [10] |
Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica,
2013, 62(9): 098503.
doi: 10.7498/aps.62.098503
|
| [11] |
Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei. 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2013, 62(4): 048501.
doi: 10.7498/aps.62.048501
|
| [12] |
Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
doi: 10.7498/aps.62.196104
|
| [13] |
Lu Dong, Jin Dong-Yue, Zhang Wan-Rong, Zhang Yu-Jie, Fu Qiang, Hu Rui-Xin, Gao Dong, Zhang Qing-Yuan, Huo Wen-Juan, Zhou Meng-Long, Shao Xiang-Peng. Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range. Acta Physica Sinica,
2013, 62(10): 104401.
doi: 10.7498/aps.62.104401
|
| [14] |
Zhou Shou-Li, Li Jia, Ren Hong-Liang, Wen Hao, Peng Yin-Sheng. The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor. Acta Physica Sinica,
2013, 62(17): 178501.
doi: 10.7498/aps.62.178501
|
| [15] |
Zhao Geng, Cheng Xiao-Man, Tian Hai-Jun, Du Bo-Qun, Liang Xiao-Yu, Wu Feng. The influence of modified electrodes by V2O5 film on the performance of ambipolar organic field-effect transistors based on C60/Pentacene. Acta Physica Sinica,
2012, 61(21): 218502.
doi: 10.7498/aps.61.218502
|
| [16] |
Chen Liang, Zhang Wan-Rong, Jin Dong-Yue, Xie Hong-Yun, Xiao Ying, Wang Ren-Qing, Ding Chun-Bao. Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing. Acta Physica Sinica,
2011, 60(7): 078501.
doi: 10.7498/aps.60.078501
|
| [17] |
Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica,
2011, 60(1): 017303.
doi: 10.7498/aps.60.017303
|
| [18] |
Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2011, 60(4): 044402.
doi: 10.7498/aps.60.044402
|
| [19] |
Ge Ji, Jin Zhi, Su Yong-Bo, Cheng Wei, Liu Xin-Yu, Wu De-Xin. A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique. Acta Physica Sinica,
2009, 58(12): 8584-8590.
doi: 10.7498/aps.58.8584
|
| [20] |
Liu Hai-Wen, Sun Xiao-Wei, Cheng Zhi-Qun, Che Yan-Feng, Li Zheng-Fan. A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model. Acta Physica Sinica,
2003, 52(9): 2298-2303.
doi: 10.7498/aps.52.2298
|
下载:
