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MnSi1.70+x(x=0, 0.05, 0.1, 0.15) compounds have been prepared by induction melting-annealing procedure combined with spark plasma sintering method. The phase composition and the thermoelectric properties of higher manganese silicide (HMS) with different Si contents are investigated. The results indicate that the samples with x＜0.1 include HMS phase and MnSi phase, and the relative content of MnSi phase decreases with x value increasing. The sample with x=0.1 is single phase HMS. The phase compositions of the sample with x＞0.1 are HMS and Si. As x value inereases the electrical conductivity of the sample gradually decreases, while the Seebeck coefficient increases because metallic MnSi phase decreases. The carrier concentration and the effective mass of the sample at room temperature decrease and the carrier mobility increases with x value increasing. In the sample with x=0.1, the impurity phase content is the least, which results in the lowest thermal conductivity and a minimum value of 2.25 W ·m-1K-1 at 800 K. The maximum ZT value of 0.45 is obtained at 850 K for MnSi1.80.
[1] Li H, Tang X F, Liu T X, Song C, Zhang Q J 2005 Acta Phys. Sin. 54 5481 (in Chinese)[李 涵、唐新峰、刘桃香、宋 晨、张清杰 2005 54 5481]
[2] Xiong C, Tang X F, Qi Q, Deng S K, Zhang Q J 2005 Acta Phys. Sin. 55 6630 (in Chinese)[熊 聪、唐新峰、祁 琼、邓书康、张清杰 2005 55 6630]
[3] Li H, Tang X F, Cao W Q, Zhang Q J 2009 Chin. Phys. B 18 287
[4] Tang X F, Chen L D, Wang J , Luo P F, Zhang Q J, Goto T, Hirai T, Yuan R Z 2004 Acta Phys. Sin. 53 1463 (in Chinese) [唐新峰、陈立东、王 军、罗派峰、张清杰、後藤孝、平井敏雄、袁润章 2004 53 1463]
[5] Harman T C, Taylor P J, Walsh M P, La Forge B E 2002 Science 297 2229
[6] Su T C, Jia X P, Ma H A, Zang C Y, Tian Y J, Zhou L, Guo J G, Dong L 2008 Mater. Lett. 62 3269
[7] Zhu T J, Yan F, Zhang S N, Zhao X B 2007 J. Phys. D 40 3537
[8] Fedorov M I, Zaitsev V K, Solomkin F, Vedernikov M 1997 Tech. Phys. Lett. 23 602
[9] Fedorov M I, Zaitsev V K 2006 Thermoelectrics Handbook (New York: CRC Press) p31-3
[10] Schwomma O, Preisinger A, Nowotny H, Wittmann A 1964 Monatsch. Chem. 95 1527
[11] Knott H, Mueller M, Heaton L 1967 Acta Crystallogr. 23 549
[12] Zwilling G, Nowotny H 1973 Monatsh. Chem. 104 668
[13] Gottlieb U, Sulpice A, Lambert-Andron B, Laborde O 2003 J. Alloys Compd. 361 13
[14] Ye H, Amelinckx S 1986 J. Solid State Chem. 61 8
[15] Kojima T, Nishida I, Sakata T 1979 J. Cryst. Growth 47 589
[16] Nishida I, Masumoto K, Kawasumi I, Sakata M 1980 J. Less-Common Met. 71 293
[17] Kawasumi I, Sakata M, Nishida I, Masumoto K 1981 J. Mater. Sci. 16 355
[18] Asanabe S 1965 J. Phys. Soc. Jpn. 20 933
[19] Gro E, Riffel M, Sthrer U 1995 J. Mater. Res. 10 34
[20] Massalski T, Okamoto H, Subramanian P, Kacprzak L 1990 Binary Alloy Phase Diagrams (Materials Park: ASM International)
[21] Rowe D 2006 Thermoelectrics Handbook (New York: CRC Press) p1-5
[22] Umemoto M, Liu Z, Omatsuzawa R, Tsuchiya K 2000 Mater. Sci. Forum 343 918
[23] Ioffe A, Wert C 1962 J. Electrochem. Soc. 109 43
[24] Migas D B, Shaposhnikov V L, Filonov A B, Borisenko V E, Dorozhkin N N 2008 Phys. Rev. B 77 075205
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[1] Li H, Tang X F, Liu T X, Song C, Zhang Q J 2005 Acta Phys. Sin. 54 5481 (in Chinese)[李 涵、唐新峰、刘桃香、宋 晨、张清杰 2005 54 5481]
[2] Xiong C, Tang X F, Qi Q, Deng S K, Zhang Q J 2005 Acta Phys. Sin. 55 6630 (in Chinese)[熊 聪、唐新峰、祁 琼、邓书康、张清杰 2005 55 6630]
[3] Li H, Tang X F, Cao W Q, Zhang Q J 2009 Chin. Phys. B 18 287
[4] Tang X F, Chen L D, Wang J , Luo P F, Zhang Q J, Goto T, Hirai T, Yuan R Z 2004 Acta Phys. Sin. 53 1463 (in Chinese) [唐新峰、陈立东、王 军、罗派峰、张清杰、後藤孝、平井敏雄、袁润章 2004 53 1463]
[5] Harman T C, Taylor P J, Walsh M P, La Forge B E 2002 Science 297 2229
[6] Su T C, Jia X P, Ma H A, Zang C Y, Tian Y J, Zhou L, Guo J G, Dong L 2008 Mater. Lett. 62 3269
[7] Zhu T J, Yan F, Zhang S N, Zhao X B 2007 J. Phys. D 40 3537
[8] Fedorov M I, Zaitsev V K, Solomkin F, Vedernikov M 1997 Tech. Phys. Lett. 23 602
[9] Fedorov M I, Zaitsev V K 2006 Thermoelectrics Handbook (New York: CRC Press) p31-3
[10] Schwomma O, Preisinger A, Nowotny H, Wittmann A 1964 Monatsch. Chem. 95 1527
[11] Knott H, Mueller M, Heaton L 1967 Acta Crystallogr. 23 549
[12] Zwilling G, Nowotny H 1973 Monatsh. Chem. 104 668
[13] Gottlieb U, Sulpice A, Lambert-Andron B, Laborde O 2003 J. Alloys Compd. 361 13
[14] Ye H, Amelinckx S 1986 J. Solid State Chem. 61 8
[15] Kojima T, Nishida I, Sakata T 1979 J. Cryst. Growth 47 589
[16] Nishida I, Masumoto K, Kawasumi I, Sakata M 1980 J. Less-Common Met. 71 293
[17] Kawasumi I, Sakata M, Nishida I, Masumoto K 1981 J. Mater. Sci. 16 355
[18] Asanabe S 1965 J. Phys. Soc. Jpn. 20 933
[19] Gro E, Riffel M, Sthrer U 1995 J. Mater. Res. 10 34
[20] Massalski T, Okamoto H, Subramanian P, Kacprzak L 1990 Binary Alloy Phase Diagrams (Materials Park: ASM International)
[21] Rowe D 2006 Thermoelectrics Handbook (New York: CRC Press) p1-5
[22] Umemoto M, Liu Z, Omatsuzawa R, Tsuchiya K 2000 Mater. Sci. Forum 343 918
[23] Ioffe A, Wert C 1962 J. Electrochem. Soc. 109 43
[24] Migas D B, Shaposhnikov V L, Filonov A B, Borisenko V E, Dorozhkin N N 2008 Phys. Rev. B 77 075205
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