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非化学计量比AgSbTe2+x化合物制备及热电性能

杜保立 徐静静 鄢永高 唐新峰

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非化学计量比AgSbTe2+x化合物制备及热电性能

杜保立, 徐静静, 鄢永高, 唐新峰

Synthesis and thermoelectric properties of nonstoichiometric AgSbTe2+ x compounds

Tang Xin-Feng, Du Bao-Li, Xu Jing-Jing, Yan Yong-Gao
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  • 采用高纯元素直接熔融、淬火并结合放电等离子烧结方法制备了非化学计量比AgSbTe2+x(x=0—0.05)系列样品,研究了不同Te含量在300—600 K范围内对样品热电性能的影响规律.结果表明:随着Te含量的增加,Ag+离子空位浓度增加,空穴浓度和电导率大幅度提高,Seebeck系数减小.热导率随Te过量程度的增加略有增加,但所有Te过量样品的晶格热导率均介于0.32—0.49 W/mK之间,低于化学计量比样品的值,接近理论最低晶格热导率.AgS
    Nonstoichiometric AgSbTe2+x (x=0—0.05) compounds have been prepared by combining melting-quench and spark plasma sintering. The effects of excessive Te on thermoelectric properties were investigated at 300 K to 600 K. Results indicated that the concentration of Ag+ ion vacancy, hole concentration and electrical conductivity increase remarkably with the increasing amount of Te, while the Seebeck coefficient decreases. In addition, the total thermal conductivity of the samples increases slightly as Te content increases. The lattice thermal conductivities of nonstoichiometric samples range from 0.32 to 0.49 W/mK, which are less than the value of the stoichiometric sample, and close to the theoretical minimum thermal conductivity. For AgSbTe2.01 (x=0.01), a maximum figure of merit ZT=1.41 was obtained at 562K. This value is 15% higher than that of the stoichiometric sample.
    • 基金项目: 国家重点基础研究发展计划(批准号:2007CB607501)资助的课题.
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    Wang H, Li J, Zhou M, Sui T 2008 Appl. Phys. Lett. 93 202106

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    Ye L H, Hoang K, Freeman A J, Mahanti S D, He J, Tritt T M, Kanatzidis M G 2008 Phys .Rev. B 77 245203

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    Wojciechowski K T, Schmidt M 2009 Phys. Rev. B 79 184202

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    Wolfe R, Wernick J, Haszko S 1960 J. Appl. Phys. 31 1959

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    Sugar J D, Medlin D L 2009 J. Alloys Comp. 478 75

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    Armstrong R W, Jr J W F, Tiller W A 1960 J. Appl. Phys. 31 1954

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    Zhu G H, Lee H, Lan Y C, Wang X W, G Joshi, Wang D Z, Yang J, Vashaee D, Guilbert H, Pillitteri A, Dresselhaus M S, Chen G, Ren Z F 2009 Phys. Rev. Lett. 102 196803

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    Snyder G J, Toberer E S 2008 Nature Mater. 7 105

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    Pei Y, Morelli D T 2009 Appl. Phys. Lett. 94 122112

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    Hoang K, Mahanti S D, Salvador J R, Kanatzidis M G 2007 Phys. Rev. Lett. 99 156403

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    Su T, Jia X, Ma H A, Yu F R, Tian Y J, Zuo G H, Zheng Y J, Jiang Y P, Dong D, Deng L, Qin B, Zheng S Z 2009 J. Appl. Phys. 105 073713

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    Jovovic V, Heremans J P 2008 Phys. Rev. B 77 245204

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  • [1]

    Venkatasubramanian R, Siivola E, Colpitts T, O’Quinn B 2001 Nature 413 597

    [2]

    Harman T C, Walsh M P, Laforge B E, Turner G W 2005 J. Electron Mater. 34 L19

    [3]

    Harman T C, Taylor P J, Walsh M P, LaForge B E 2002 Science 297 2229

    [4]

    Hsu K F, Loo S, Guo F, Chen W, Dyck J S, Uher C, Hogan T, Polychroniadis E K, Kanatzidis M G 2004 Science 303 818

    [5]

    Yang S H, Zhu T J, T Sun, J He, Zhang S N, Zhao X B 2008 Nanotechnology 19 245707

    [6]

    Li H, Tang X, Su X, Zhang Q 2008 Appl. Phys. Lett. 92 202114

    [7]

    Su X L, Tang X F, Li H, Deng S K 2008 Acta Phys. Sin. 57 6488 (in Chinese) [苏贤礼、唐新峰、李 涵、邓书康 2008 57 6488]

    [8]

    Xiong C, Deng S K, Tang X F, Qi Q, Zhang Q J 2008 Acta Phys. Sin. 57 1190 (in Chinese) [熊 冲、邓书康、唐新峰、祁 琼 2008 57 1190]

    [9]

    Li H, Tang X F, Cao W Q, Zhang Q J 2009 Chin. Phys. B 18 287

    [10]

    Morelli D T, Jovovic V, Heremans J P 2008 Phys. Rev. Lett. 101 035901

    [11]

    Hockings E F 1959 J. Phys. Chem. Solids. 10 341

    [12]

    Wernick J H, Benson K E 1957 J. Phys. Chem. Solids. 3 157

    [13]

    Rosi F D, Hockings E F, Lindenblad N E 1961 RCA Rev. 22 82

    [14]

    Wang H, Li J, Zhou M, Sui T 2008 Appl. Phys. Lett. 93 202106

    [15]

    Ye L H, Hoang K, Freeman A J, Mahanti S D, He J, Tritt T M, Kanatzidis M G 2008 Phys .Rev. B 77 245203

    [16]

    Jovovic V, Heremans J 2009 J. Electron Mater. 38 1504

    [17]

    Ragimov S S, Aliev S A 2007 Inorg. Mater. 43 1184

    [18]

    Wojciechowski K T, Schmidt M 2009 Phys. Rev. B 79 184202

    [19]

    Wolfe R, Wernick J, Haszko S 1960 J. Appl. Phys. 31 1959

    [20]

    Sugar J D, Medlin D L 2009 J. Alloys Comp. 478 75

    [21]

    Armstrong R W, Jr J W F, Tiller W A 1960 J. Appl. Phys. 31 1954

    [22]

    Zhu G H, Lee H, Lan Y C, Wang X W, G Joshi, Wang D Z, Yang J, Vashaee D, Guilbert H, Pillitteri A, Dresselhaus M S, Chen G, Ren Z F 2009 Phys. Rev. Lett. 102 196803

    [23]

    Snyder G J, Toberer E S 2008 Nature Mater. 7 105

    [24]

    Pei Y, Morelli D T 2009 Appl. Phys. Lett. 94 122112

    [25]

    Hoang K, Mahanti S D, Salvador J R, Kanatzidis M G 2007 Phys. Rev. Lett. 99 156403

    [26]

    Su T, Jia X, Ma H A, Yu F R, Tian Y J, Zuo G H, Zheng Y J, Jiang Y P, Dong D, Deng L, Qin B, Zheng S Z 2009 J. Appl. Phys. 105 073713

    [27]

    Jovovic V, Heremans J P 2008 Phys. Rev. B 77 245204

    [28]

    David G C, Watson S K, Pohl R O 1992 Phys. Rev. B 46 6131

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  • 被引次数: 0
出版历程
  • 收稿日期:  2009-11-19
  • 修回日期:  2010-05-05
  • 刊出日期:  2011-01-15

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