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Cu掺杂AgSbTe2化合物的相稳定、晶体结构及热电性能

张贺 骆军 朱航天 刘泉林 梁敬魁 饶光辉

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Cu掺杂AgSbTe2化合物的相稳定、晶体结构及热电性能

张贺, 骆军, 朱航天, 刘泉林, 梁敬魁, 饶光辉

Phase stability, crystal structure and thermoelectric properties of Cu doped AgSbTe2

Zhang He, Luo Jun, Zhu Hang-Tian, Liu Quan-Lin, Liang Jing-Kui, Rao Guang-Hui
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  • 利用熔融快淬结合放电等离子烧结(SPS), 制备了CuxAg1-xSbTe2(x= 00.3)样品. 粉末x射线衍射(XRD)分析结果显示, SPS处理以前, 含Cu样品形成NaCl型结构的固溶体, 而未加入Cu的样品析出Ag2Te第二相. 根据热分析和XRD测量结果, Cu的加入能够有效抑制Ag2Te的析出, 但同时会在快淬样品中产生少量非晶相. 在温度升高到540 K左右时, 非晶相发生晶化, 形成Sb7Te亚稳相, 并最终转变成Sb2Te3稳定相. 对快淬样品进行低温SPS快速处理后, x =0.1样品为面心立方结构的单相化合物, 但是x=0.2, 0.3的样品分别析出第二相Sb7Te和Sb2Te3. 由于析出第二相, x=0.2, 0.3样品的电导率增大, Seebeck系数减小, 热导率相应升高, 综合热电性能降低.x=0.1单相样品的功率因子与文献报道的AgSbTe2化合物相当. 元素替代的合金化效应 增强了Cu0.1Ag0.9SbTe2化合物的声子散射, 有效降低了样品的热导率. 因此, 单相样品Cu0.1Ag0.9SbTe2表现出较佳的热电性能, 在620 K时热电优值达到1.
    CuxAg1-xSbTe2 samples withx = 00.3 are prepared by a combined process of melt-quenching and spark plasma sintering (SPS). X-ray powder diffraction (XRD) analysis indicates that single phase samples with the NaCl-type structure are obtained for the Cu-doped samples before SPS treatment, whereas a small quantity of Ag2Te impurities coexist with the main cubic phase for the sample without Cu. According to our thermoanalysis and XRD results, the substitution of Cu for Ag can effectively prevent the precipitation of Ag2Te, but this also leads to the presence of a minor amorphous phase in the melt-quenched sample. The amorphous phase crystallizes into Sb7Te metastable phase at about 540 K, which finally transforms into the stable Sb2Te3 compound. After the SPS treatment of the melt-quenched sample, the sample withx=0.1 remains a single phase with the face-centered-cubic crystal structure, while Sb7Te and Sb2Te3 are precipitated as the second phases for the samples withx = 0.2 and 0.3, respectively. The electrical conductivity increases and the Seebeck coefficient decreases with the addition of Cu due to the existence of the second phase in the samples withx = 0.2 and 0.3. Accordingly, thermal conductivities also increase with the addition of Cu, leading to the reduced thermoelectric performance of thex= 0.2 and 0.3 samples. For the sample withx = 0.1, its power factor is comparable to that of the literature reported AgSbTe2 compound. As a result of so-called alloying effect, the phonon scattering effect is enhanced due to the partial replacement of Ag by Cu, leading to the reduced thermal conductivity of thex = 0.1 sample. Therefore, the Cu0.1Ag0.9SbTe2 sample exhibits the promising thermoelectric performance and a dimensionless thermoelectric figure of merit (ZT) value of 1 is achieved at 620 K.
    • 基金项目: 国家自然科学基金 (批准号: 11144002)、国家重点基础研究发展计划 (批准号: 2007CB925003) 和教育部科学技术研究计划重大项目(批准号: 309006)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11144002), the State Key Development Program for Basic Research of China (Grant No. 2007CB925003), and the Major Program of Science and Technology Research of Ministry of Education, China (Grant No. 309006).
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    Tritt T M 1999 Science 283 804

    [2]

    Rowe D M 2005 CRC Handbook of Thermoelectric Materials (New York: CRC Press)

    [3]

    Nolas G S, Cohn J L, Slack G A, Schujman S B 1998 Appl. Phys. Lett. 73 178

    [4]

    Vining C B 2008 Nat. Mater. 7 765

    [5]

    Saramat A, Svensson G, Palmqvist A E C, Stiewe C, Mueller E, Platzek D, Williams S G K, Rowe D M, Bryan J D, Stucky G D 2006 J. Appl. Phys. 99 023708

    [6]

    Kim J H, Okamoto N L, Kishida K, Tanaka K, Inui H 2006 Acta Mater. 54 2057

    [7]

    Nolas G S, Kaeser M, Littleton R T, Tritt T M 2000 Appl. Phys. Lett. 77 1855

    [8]

    Sales B C, Mandrus D, Chakoumakos B C, Keppens V, Thompson J R 1997 Phys. Rev. B 56 15081

    [9]

    Tanga X, Zhang Q, Chen L, Goto T, Hirai T 2005 J. Appl. Phys. 97 093712

    [10]

    Puyet M, Dauscher A, Lenoir B, Dehmas M, Stiewe C, M黮ler E, Hejtmanek J 2005 J. Appl. Phys. 97 083712

    [11]

    Brown S R, Kauzlarich S M, Gascoin F, Snyder G J 2006 Chem. Mater. 18 1873

    [12]

    Fisher I R, Bud'ko S L, Song C, Canfield P C, Ozawa T C, Kauzlarich S M 2000 Phys. Rev. Lett. 85 1120

    [13]

    Akrap A, Barišic N, Forro L, Mandrus D, Sales B C 2007 Phys. Rev. B 76 085203

    [14]

    Sales B C 2002 Science 295 1248

    [15]

    Dresselhaus M S, Chen G, Tang M Y, Yang R G, Lee H, Wang D Z 2007 Adv. Mater. 19 1043

    [16]

    Boukai A I, Bunimovich Y, Tahir-Kheli J, Yu J K, Goddard W A III, Heath J R 2007 Nature 451 168

    [17]

    Venkatasubramanian R, Siivola E, Colpitts T, O'Quinn B 2001 Nature 413 597

    [18]

    Hsu K F, Loo S, Guo F, Chen W, Dyck J S, Uher C 2004 Science 303 818

    [19]

    Bilc D, Mahanti S D, Quarez E, Hsu K F, Pcionek R, Kanatzidis M G 2004 Phys. Rev. Lett. 93 146403

    [20]

    Rosi F D, Dismukes J P, Hockings E F 1960 Electr. Eng. 79 450

    [21]

    Morelli D T, Jovovic V, Heremans J P 2008 Phys. Rev. Lett. 101 035901

    [22]

    Hockings E F 1959 J. Phys. Chem. Solids 10 341

    [23]

    Ma H A, Su T C, Zhu P W, Guo J G, Jia X P 2008 J. Alloys Compd. 454 415

    [24]

    Wang H, Li J F, Nan C W, Zhou M 2006 Appl. Phys. Lett. 88 092104

    [25]

    Majer R G 1963 Z. Metall. 54 311

    [26]

    Marin R M, Brun G, Tedenac J C 1985 J. Mater. Sci. 20 730

    [27]

    Matsushita H, Hagiwara E, Katsui A 2004 J. Mater. Sci. 39 6299

    [28]

    McHugh J P, Tiller W A, Haszkko S E, Wernick J H 1961 J. Appl. Phys. 32 1785

    [29]

    Ye L H, Hoang K, Freeman A J, Mahanti S D, He J, Tritt T M 2008 Phys. Rev. B 77 245203

    [30]

    Yang S H, Zhu T J, Sun T, He J, Zhang S N, Zhao X B 2008 Nanotechnology 9 245707

    [31]

    Wojciechowski K T, Schmidt M 2009 Phys. Rev. B 79 184202

    [32]

    Petzow G, Effenberg G 1988 Ternary Alloys 2 554

    [33]

    Ayralmarin R M, Brun G, Maurin M, Tedenac J C 1990 Eur. J. Solid State Inorg. Chem. 27 747

    [34]

    Du L B, Li H, Tang X F 2011 J. Alloys Compd. 509 2039

    [35]

    Zhang S N, Jing G Y, Zhu T J, Zhao X B, Yang S H 2011 Int. J. Min. Met. Mater. 18 352

    [36]

    Ragimov S S, Aliev S A 2007 Inorg. Mater. 43 1184

    [37]

    Wang H, Li J F, Zou M M, Sui T 2008 Appl. Phys. Lett. 93 202106

    [38]

    Du B L, Han L, Xu J J, Tang X F, Uher C 2010 Chem. Mater. 22 5521

    [39]

    Du B, Xu J, Zhang W, Tang X 2011 J. Electron. Mater. 40 1249

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出版历程
  • 收稿日期:  2011-07-22
  • 修回日期:  2012-04-28
  • 刊出日期:  2012-04-20

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