Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2010, 59(11): 8131-8136. DOI: 10.7498/aps.59.8131
| Citation: |
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2010, 59(11): 8131-8136. DOI: 10.7498/aps.59.8131
|
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2010, 59(11): 8131-8136. DOI: 10.7498/aps.59.8131
| Citation: |
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2010, 59(11): 8131-8136. DOI: 10.7498/aps.59.8131
|