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There is great interest in using the strained Si CMOS technology lately for carrier mobility enhancement. Intrinsic carrier concentration is the important physical parameter for the characterization of strained Si materials and the determination of the electrical properties of strained Si-based devices. Starting from analyzing the band structure of strained Si/（001）Si1-xGex，the model of its intrinsic carrier concentration related to Ge fraction （x） at 300 K was established with the frame of K.P theory，which provides valuable reference to the understanding on the strained Si-based device physics and its design.
[1] ［1］Song J J，Zhang H M，Dian X Y，Hu H Y，Xuan R X 2008 Acta Phys. Sin. 57 5918 （in Chinese ）［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918］
[2] ［2］Liu H H，Duan X F，Xu Q X 2009 Micron 40 274
[3] ［3］Guillaume T，Mouis M 2006 Solid-State Electronics 50 701
[4] ［4］Zhang W R，Zeng Zh，Luo J SH 1996 Research & Progress of SSE 16 314 （in Chinese）［张万荣、曾峥、罗晋生 1996 固体电子学研究与进展 16 314］
[5] ［5］Song J J，Zhang H M，Hu H Y，Dai X Y，Xuan R X 2007 Chin. Phys. 16 3827
[6] ［6］Song J J，Zhang H M，Dian X Y，Hu H Y，Xuan R X 2008 Acta Phys. Sin. 57 7228 （in Chinese）［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 7228］
[7] ［7］Song J J，Zhang H M，Dian X Y，Hu H Y，Xuan R X 2009 Research & Progress of SSE 29 14 （in Chinese）［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 固体电子学研究与进展 29 14］
[8] ［8］Liu E K，Zhu B Sh，Luo J Sh 1994 Semiconductor Physics （Beijing：Defense Industry Press） p367 （in Chinese）［刘恩科、朱秉升、罗晋生 1994 半导体物理学（北京：国防工业出版社）第367页］
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[1] ［1］Song J J，Zhang H M，Dian X Y，Hu H Y，Xuan R X 2008 Acta Phys. Sin. 57 5918 （in Chinese ）［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918］
[2] ［2］Liu H H，Duan X F，Xu Q X 2009 Micron 40 274
[3] ［3］Guillaume T，Mouis M 2006 Solid-State Electronics 50 701
[4] ［4］Zhang W R，Zeng Zh，Luo J SH 1996 Research & Progress of SSE 16 314 （in Chinese）［张万荣、曾峥、罗晋生 1996 固体电子学研究与进展 16 314］
[5] ［5］Song J J，Zhang H M，Hu H Y，Dai X Y，Xuan R X 2007 Chin. Phys. 16 3827
[6] ［6］Song J J，Zhang H M，Dian X Y，Hu H Y，Xuan R X 2008 Acta Phys. Sin. 57 7228 （in Chinese）［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 7228］
[7] ［7］Song J J，Zhang H M，Dian X Y，Hu H Y，Xuan R X 2009 Research & Progress of SSE 29 14 （in Chinese）［宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 固体电子学研究与进展 29 14］
[8] ［8］Liu E K，Zhu B Sh，Luo J Sh 1994 Semiconductor Physics （Beijing：Defense Industry Press） p367 （in Chinese）［刘恩科、朱秉升、罗晋生 1994 半导体物理学（北京：国防工业出版社）第367页］
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