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There has been aroused a lot of interest in the strained Si technology in the microelectronic field. Density of states (DOS) is an important physical parameter in strained Si materials. Based on the Kleinerts Variational perturbation (KP) theory related to stress, DOSs of electrons and holes near the bottom of conduction band and the top of valence band are obtained in tetragonal, rhombohedral and monoclinic strained Si grown from (001), (101) and (111) substrates respectively. It is found that their DOSs are obviously different from the ones of cubic unstrained Si, except DOSs of electrons near the bottom of conduction band in rhombohedral and monoclinic strained Si. The quantized model obtained can provide valuable references for understanding the strained Si material physics and developing the theoretical model of the other important physical parameters.
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Keywords:
- strained Si /
- KP /
- density of state
[1] Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics 52 1437
[2] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[3] Chang S T, Liao S H, Lin C Y 2008 Thin Solid Films 517 356
[4] Smith R A 1978 Semiconductors (London: Cambridge University Press) p116
[5] Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p52 (in Chinese) [刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社) 第367页] 〖6] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[6] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Journal of Semiconductors 29 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 半导体学报 29 1670]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2010 Journal of Semiconductors 31 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2010 半导体学报 31 1]
[8] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2009 Research & Progress of SSE 29 14 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 固体电子学研究与进展 29 14]
[9] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[10] Song J J,Zhang H M,Hu H Y,Fu Q 2009 Science In China(G) 52 546
[11] Song J J, Zhang H M, Xuan R X, Hu H Y, Dian X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英 2009 58 4958]
[12] Song J J, Zhang H M, Hu H Y, Xuan R X, Dian X Y 2009 IEEE International Conference on Electron Devices and Solid-State Circuit Xian
[13] Shi M, Wu G J 2008 Physics of Semiconductor Devices (Xian: Xian Jiaotong University Press) (in Chinese) p389 [施 敏、伍国珏 2008 半导体器件物理(西安:西安交通大学出版社)第389页]
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[1] Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics 52 1437
[2] Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Y 2006 Chin. Phys. 15 1339
[3] Chang S T, Liao S H, Lin C Y 2008 Thin Solid Films 517 356
[4] Smith R A 1978 Semiconductors (London: Cambridge University Press) p116
[5] Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p52 (in Chinese) [刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社) 第367页] 〖6] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[6] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Journal of Semiconductors 29 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 半导体学报 29 1670]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2010 Journal of Semiconductors 31 1670 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2010 半导体学报 31 1]
[8] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2009 Research & Progress of SSE 29 14 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 固体电子学研究与进展 29 14]
[9] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[10] Song J J,Zhang H M,Hu H Y,Fu Q 2009 Science In China(G) 52 546
[11] Song J J, Zhang H M, Xuan R X, Hu H Y, Dian X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英 2009 58 4958]
[12] Song J J, Zhang H M, Hu H Y, Xuan R X, Dian X Y 2009 IEEE International Conference on Electron Devices and Solid-State Circuit Xian
[13] Shi M, Wu G J 2008 Physics of Semiconductor Devices (Xian: Xian Jiaotong University Press) (in Chinese) p389 [施 敏、伍国珏 2008 半导体器件物理(西安:西安交通大学出版社)第389页]
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