Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Xin Yan-Hui; Liu Hong-Xia; Fan Xiao-Jiao; Zhuo Qing-Qing

doi:10.7498/aps.62.108501

Abstract

A single Halo fully depleted strain Si Silicon-On-insulator (SOI) structure, which has the advantages of strained Si, Halo doping, and SOI structure, is proposed to improve driving current, suppress the short channel effect (SCE) and drain induced barrier lowering (DIBL) effect. A two-dimensional analytical model for the surface potential, the surface electric field and the threshold voltage is proposed by solving Poisson's equation. The effects of Ge fraction in the relaxed layer on surface potential and threshold voltage are investigated. In the paper we analyze the influence of drain voltage on surface potential. Finally the effects of Halo doping on threshold voltage and DIBL are investigated. The results show that the novel device can suppress the short channel effect and DIBL effect, and increase carrier transport speed.

Keywords:

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068, 61076097), and Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110203110012).

References

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[7]	Djeffal F, Meguellati M, Benhaya A 2009 Physica E 41 1872
[8]	Reddy G V, Kumar M J 2004 Microelectron. J. 35 761
[9]	Venkataraman V, Nawal S, Kummer M J 2007 IEEE Trans. Electron Dev. 54 554
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[11]	Young K K 1989 IEEE Trans. Electron Dev. 36 399
[12]	Reddy G V, Kumar M J 2005 IEEE Trans. Nanotechnol. 4 260

Cited By

[1]	He J, Chan M, Xi X M 2006 Chin. J. Semicond. 27 388
[2]	Murali R, Austin B L, Wang L 2004 IEEE Trans. Electron Dev. 51 940
[3]	Wang X Y, Zhang H M, Song J J, Ma J L, Wang G Y, An J H 2011 Acta Phys. Sin. 60 077205 (in Chinese) [王晓艳, 张鹤鸣, 宋建军, 马建立, 王冠宇, 安久华 2011 60 077205]
[4]	Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李劲, 刘红侠, 李斌, 曹磊, 袁博 2010 59 8131]
[5]	Qu J T, Zhang H M, Qin S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [屈江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇2011 60 098501]
[6]	Li Z C 2008 Chin. Phys. B 17 4312
[7]	Djeffal F, Meguellati M, Benhaya A 2009 Physica E 41 1872
[8]	Reddy G V, Kumar M J 2004 Microelectron. J. 35 761
[9]	Venkataraman V, Nawal S, Kummer M J 2007 IEEE Trans. Electron Dev. 54 554
[10]	Kummer M J, Venkataraman V, Nawal S 2006 IEEE Trans. Electron Dev. 53 364
[11]	Young K K 1989 IEEE Trans. Electron Dev. 36 399
[12]	Reddy G V, Kumar M J 2005 IEEE Trans. Nanotechnol. 4 260

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Catalog

Vol. 62, Issue 10 - 2013-05-20

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