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Strained Si CMOS technology is one of the most advanced technologies in present day microelectronics. Electronical conductivity effective mass of strained Si is a key parameter to study electron mobility enhancement. Using K ·P method with the help of perturbation theory, dispersion relation near conduction band valley was determined, including the longitudinal and transverse masses. And then, electronical conductivity effective masses of strained Si on (001),(101) and (111) planes were obtained with respect to stress, splitting energy and directions. It was found that both the [100]and [010]directional electronical conductivity effective masses of strained Si/(001)Si1-xGex and the [010]directional one of strained Si/(101)Si1-xGex decrease with increasing Ge fraction or stress, and both values tend to be constant. The results provide valuable reference to the conduction channel design related to stress and orientation in the strained Si nMOS devices.
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Keywords:
- strained Si /
- K ·P method /
- conductivity effective mass
[1] Lin J Y, Tang Y H, Tsai M H, 2009 Computer Physics Communication 180 659
[2] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese ) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 7228]
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[9] Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) (in Chinese ) p95 [刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社)第95页]
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[1] Lin J Y, Tang Y H, Tsai M H, 2009 Computer Physics Communication 180 659
[2] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese ) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 7228]
[3] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese ) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[4] Courtesy J R, 2005 IEEE Circuits & Magazine 9 18
[5] Song J J, Zhang H M, Hu H Y, Dian X Y, Xuan R X 2007 Chin. Phys. 16 3827
[6] Xie X D, Lu D1998 Energy band theory of solids (Shanghai: Fudan University Press) (in Chinese ) p58 [谢希德、陆 栋1998 固体能带理论(上海:复旦大学出版社) 第58页]
[7] Smirnov S, Kosina H 2004 Solid-State Electronics 48 1325
[8] Shi M, Wu G J 2008 Physics of Semiconductor Devices (Xi’an: Xi’an Jiaotong University Press) (in Chinese ) p389 [施 敏、伍国珏2008 半导体器件物理(西安:西安交通大学出版社) 第389页]
[9] Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) (in Chinese ) p95 [刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社)第95页]
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