-
Based on the analysis of Poly-Si1-xGex gate work function and by solving Poisson equation, the models of vertical electric field and potential distribution in strained Si NMOSFET with Poly-Si1-xGex gate are obtained; threshold voltage model and the gate depletion thickness and it's normalization model are established in strained Si NMOSFET based on the above results, with the gate depletion effect of Poly-Si1-xGex taken into account. Then the influences of device geometrical and physical parameters of device especially the Ge fraction on Poly-Si1-xGex gate depletion thickness are investigated. Furthermore, the effect of gate depletion thickness on threshold voltage is analyzed. It shows that the poly depletion thickness decreases with the increases of Ge fraction and gate doping concentration, while it increases with the increase of substrate doping concentration. Furthermore, the threshold voltage increases with the increase of gate depletion thickness. The results can provide theoretical references to the design of strained Si devices.
-
Keywords:
- ploy-Si1-xGex /
- strained Si /
- gate depletion effect /
- threshold voltage
[1] Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[2] Doyle B S, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Murthy A, Rios R, Chau R 2003 IEEE Electron Dev. Lett. 24 263
[3] Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 59 2064]
[5] Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军, 张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 58 4958]
[6] Maiti T K, Banerjee A, Maiti C K 2010 Engineering 2 879
[7] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Atca Phys. Sin. 59 579 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2010 59 579]
[8] Kang Y, Kim H, Lee J, Son Y, Park B G, Lee J D, Shin H 2009 IEEE Electron Dev. Lett. 30 1371
[9] Schuegraf K F, King C C, Hu C M 1993 International Symposium on VLSI Technology, Systems, and Applications: Proceeding of Technical Papers, Taipei, May 12-14, 86
[10] Grados H R J, Manera L T, Wada R, Diniz J A, Doi L, Tatsch P J, Figueroa H E, Swart J W 2010 Japan J. Appl. Phys. 49 04DC04
[11] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2009 58 7947]
[12] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[13] Liu H T, Sin J K O, Xuan P Q, Bokor J 2004 IEEE Trans. Electron Dev. 51 106
[14] Ponomarev Y V, Stolk P A, Dachs C J J, Montree A H 2000 IEEE Trans. Electron Dev. 47 1507
[15] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Defense Industry Press) p366 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京:国防工业出版社)]
[16] Chang T Y, Izabelle A 1989 J. Appl. Phys. 65 2162
[17] Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Dev. Lett. 18 456
[18] Gupta A 2003 Investigation of High-Speeed Optoelectronic Receivers in Silicon Germanium (SiGe) (Pittsburgh:University of Pittsburgh)
[19] Julian E S, Alamsyah A T 2006 the 2nd Information and Communication Technology Seminar, Surabaya, Indonesia, August 29, 132
[20] Josse E, Skotnicki T 2001 Solid-State Device Research Conference, Crolles, France, September 11-13, 2001 207
[21] Lee H, Vashaee D, Wang D Z, Dresselhaus M S, Ren Z F, Chen G 2010 J. Appl. Phys. 107 094308
[22] Goo J S, Xiang Q, Takamura Y, Arasnia F, Paton E N, Besser P, Pan J, Lin M R 2003 IEEE Electron Dev. Lett. 24 568
-
[1] Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[2] Doyle B S, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Murthy A, Rios R, Chau R 2003 IEEE Electron Dev. Lett. 24 263
[3] Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 59 2064]
[5] Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军, 张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 58 4958]
[6] Maiti T K, Banerjee A, Maiti C K 2010 Engineering 2 879
[7] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Atca Phys. Sin. 59 579 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2010 59 579]
[8] Kang Y, Kim H, Lee J, Son Y, Park B G, Lee J D, Shin H 2009 IEEE Electron Dev. Lett. 30 1371
[9] Schuegraf K F, King C C, Hu C M 1993 International Symposium on VLSI Technology, Systems, and Applications: Proceeding of Technical Papers, Taipei, May 12-14, 86
[10] Grados H R J, Manera L T, Wada R, Diniz J A, Doi L, Tatsch P J, Figueroa H E, Swart J W 2010 Japan J. Appl. Phys. 49 04DC04
[11] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2009 58 7947]
[12] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[13] Liu H T, Sin J K O, Xuan P Q, Bokor J 2004 IEEE Trans. Electron Dev. 51 106
[14] Ponomarev Y V, Stolk P A, Dachs C J J, Montree A H 2000 IEEE Trans. Electron Dev. 47 1507
[15] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Defense Industry Press) p366 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京:国防工业出版社)]
[16] Chang T Y, Izabelle A 1989 J. Appl. Phys. 65 2162
[17] Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Dev. Lett. 18 456
[18] Gupta A 2003 Investigation of High-Speeed Optoelectronic Receivers in Silicon Germanium (SiGe) (Pittsburgh:University of Pittsburgh)
[19] Julian E S, Alamsyah A T 2006 the 2nd Information and Communication Technology Seminar, Surabaya, Indonesia, August 29, 132
[20] Josse E, Skotnicki T 2001 Solid-State Device Research Conference, Crolles, France, September 11-13, 2001 207
[21] Lee H, Vashaee D, Wang D Z, Dresselhaus M S, Ren Z F, Chen G 2010 J. Appl. Phys. 107 094308
[22] Goo J S, Xiang Q, Takamura Y, Arasnia F, Paton E N, Besser P, Pan J, Lin M R 2003 IEEE Electron Dev. Lett. 24 568
Catalog
Metrics
- Abstract views: 7890
- PDF Downloads: 619
- Cited By: 0
下载:
