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Pr0.5Ca0.5MnO3(PCMO) is been prepared by a solid-state reaction technique, and the thin film of PCMO is deposited on an n-type silicon substrate by a pulsed laser deposition method. Experimental results indicate the transport character of the film may be consistent with the variable range hopping model in a temperature range of 80—300 K, but it changes from one-dimension to two-dimensional and then turns three-dimensional with temperature increasing. It may be attributed to the effect of orbit order on the transport characteristics. The PCMO/Si heterojunction possesses good rectifieation property under a magnetic field,and at a positive voltage the heterojunction shows its magnetoresistance to have a remarkable transition from positive to negative.
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Keywords:
- Pr0.5Ca0.5MnO3 /
- Si /
- rectifying property /
- positive magnetoresistance
[1] Salamon M B,Jaime M 2001 Rev. Mod. Phys. 73 583
[2] Von Helmolt R,Wecker J,Holzapfel B,Schultz L,Samwer K 1993 Phys. Rev. Lett. 71 2331
[3] Jin K X,Chen C L,Wang S L,Wang Y L,Wang Y C,Song Z M 2004 J. Appl. Phys. 96 1537
[4] Zhang N,Ding W P,Tan X L,Xu Y L,Xing D Y,Du Y W 1998 Chin. Phys. 7 361
[5] Zhao K,Huang Y H,Lü H B,He M,Jin K J,Chen Z H,Zhou Y L,Cheng B L,Dai S Y,Yan G Z 2005 Chin. Phys. 14 420
[6] Goodenough J B 1955 Phys. Rev. 100 564
[7] Chen C H,Cheong S 1996 Phys. Rev. Lett. 76 4042
[8] Li R W,Sun J R,Wang Z H,Chen X,Zhang S Y,Shen B G 2000 Chin. Phys. 9 630
[9] Martin C,Maignan A,Hervieu M,Raveau B 1999 Phys. Rev. B 60 12191
[10] Fiebig M,Miyano K,Satoh T,Tomioka Y,Tokura Y 1999 Phys. Rev. B 60 7944
[11] Schlottmann P 2009 Phys. Rev. B 80 104428
[12] Wang S P,Zhang J C,Cao G X,Yu J,Jing C,Cao S X 2006 Acta Phys. Sin. 55 367 (in Chinese) [王仕鹏、张金仓、曹桂新、俞 坚、敬 超、曹世勋 2006 55 367]
[13] Li X J,Wang Q 2009 Acta Phys. Sin. 58 6482 (in Chinese) [李晓娟、王 强 2009 58 6482]
[14] Lord K,Hunter D,Williams T M,Pradhan A K 2006 Appl. Phys. Lett. 89 052116
[15] He M,Lü H B,Huang Y H,Zhao K,Tian H F,Xiang W F,Chen Z H,Zhou Y L,Jin K J,Li J Q,Yang G Z 2005 Sci. China,Ser. G 35 625 (in Chinese) [何 萌、吕惠宾、黄延红、赵 昆、田焕芳、相文峰、陈正豪、周岳亮、金奎娟、李建奇、杨国桢 2005 中国科学 G 35 625]
[16] Liu L F,Lü H B,Dai S Y,Chen Z H 2005 Acta Phys. Sin. 54 2342 (in Chinese) [刘丽峰、吕惠宾、戴守愚、陈正豪 2005 物 理学报 54 2342 ] 〖17] Jin K X,Zhao S G,Chen C L 2009 Physica B 404 1515
[17] Yan S S 2000 Fundamentals of Solid State Physics (Beijing:Peking university press) p312 (in Chinese) [阎守胜 2000 固体物理基础(北京:北京大学出版社) 第312页]
[18] Tokunaga Y,Lottenmoser T,Lee Y,Kumai R,Uchida M,Arima T,Tikura Y 2006 Nat. Mater 5 937
[19] Coey J M D,Viret M,Molnar S V 1999 Adv. Phys. 48 167
[20] Jin K J,Lu H B,Zhou Q L,Zhao K,Cheng B L,Chen Z H,Zhou Y L,Yang G Z 2005 Phys. Rev. B 71 184428
[21] Zhou T F,Li G,Wang N Y,Wang B M,Li X G 2006 Appl. Phys. Lett. 88 232508
[22] Xiong C M,Zhao Y G,Xie B T,Lang P L 2006 Appl. Phys. Lett. 88 193507
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[1] Salamon M B,Jaime M 2001 Rev. Mod. Phys. 73 583
[2] Von Helmolt R,Wecker J,Holzapfel B,Schultz L,Samwer K 1993 Phys. Rev. Lett. 71 2331
[3] Jin K X,Chen C L,Wang S L,Wang Y L,Wang Y C,Song Z M 2004 J. Appl. Phys. 96 1537
[4] Zhang N,Ding W P,Tan X L,Xu Y L,Xing D Y,Du Y W 1998 Chin. Phys. 7 361
[5] Zhao K,Huang Y H,Lü H B,He M,Jin K J,Chen Z H,Zhou Y L,Cheng B L,Dai S Y,Yan G Z 2005 Chin. Phys. 14 420
[6] Goodenough J B 1955 Phys. Rev. 100 564
[7] Chen C H,Cheong S 1996 Phys. Rev. Lett. 76 4042
[8] Li R W,Sun J R,Wang Z H,Chen X,Zhang S Y,Shen B G 2000 Chin. Phys. 9 630
[9] Martin C,Maignan A,Hervieu M,Raveau B 1999 Phys. Rev. B 60 12191
[10] Fiebig M,Miyano K,Satoh T,Tomioka Y,Tokura Y 1999 Phys. Rev. B 60 7944
[11] Schlottmann P 2009 Phys. Rev. B 80 104428
[12] Wang S P,Zhang J C,Cao G X,Yu J,Jing C,Cao S X 2006 Acta Phys. Sin. 55 367 (in Chinese) [王仕鹏、张金仓、曹桂新、俞 坚、敬 超、曹世勋 2006 55 367]
[13] Li X J,Wang Q 2009 Acta Phys. Sin. 58 6482 (in Chinese) [李晓娟、王 强 2009 58 6482]
[14] Lord K,Hunter D,Williams T M,Pradhan A K 2006 Appl. Phys. Lett. 89 052116
[15] He M,Lü H B,Huang Y H,Zhao K,Tian H F,Xiang W F,Chen Z H,Zhou Y L,Jin K J,Li J Q,Yang G Z 2005 Sci. China,Ser. G 35 625 (in Chinese) [何 萌、吕惠宾、黄延红、赵 昆、田焕芳、相文峰、陈正豪、周岳亮、金奎娟、李建奇、杨国桢 2005 中国科学 G 35 625]
[16] Liu L F,Lü H B,Dai S Y,Chen Z H 2005 Acta Phys. Sin. 54 2342 (in Chinese) [刘丽峰、吕惠宾、戴守愚、陈正豪 2005 物 理学报 54 2342 ] 〖17] Jin K X,Zhao S G,Chen C L 2009 Physica B 404 1515
[17] Yan S S 2000 Fundamentals of Solid State Physics (Beijing:Peking university press) p312 (in Chinese) [阎守胜 2000 固体物理基础(北京:北京大学出版社) 第312页]
[18] Tokunaga Y,Lottenmoser T,Lee Y,Kumai R,Uchida M,Arima T,Tikura Y 2006 Nat. Mater 5 937
[19] Coey J M D,Viret M,Molnar S V 1999 Adv. Phys. 48 167
[20] Jin K J,Lu H B,Zhou Q L,Zhao K,Cheng B L,Chen Z H,Zhou Y L,Yang G Z 2005 Phys. Rev. B 71 184428
[21] Zhou T F,Li G,Wang N Y,Wang B M,Li X G 2006 Appl. Phys. Lett. 88 232508
[22] Xiong C M,Zhao Y G,Xie B T,Lang P L 2006 Appl. Phys. Lett. 88 193507
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