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An analytical model on threshold voltage and subthreshold swing for high-k gate dielectric GeOI MOSFET (metal-oxide-semiconductor field-effect transistor) is established by considering the two-dimensional effects in both channel and buried-oxide layers and solving two-dimensional Poisson’s equation. The influences of the main structural parameters of the device on threshold voltage and subthreshold swing, and the short-channel effects, drain induction barrier lower effect and substrate-biased effect are investigated using the model, and the design principles and value range of the structural parameters are presented to optimize the electrical performances of the device. The simulated results are in good agreement with the TCAD simulated data, confirming the validity of the model.
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Keywords:
- GeOI MOSFET /
- threshold voltage /
- subthreshold swing /
- short-channel effects
[1] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[2] Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 60 058501]
[3] Choi Y K, Asano K, Lindert N, Subramanian V, King T J, Bokor J, Hu C 2000 IEEE Electron Dev. Lett. 21 254
[4] Zhang X F, Xu J P, Lai P T, Li C X, Guan J G 2007 Chin. Phys. 16 3820
[5] Luo X R, Luo Y C, Fan Y, Hu G Y, Wang X W, Zhang Z Y, Fan Y H, Cai J Y, Wang P, Zhou K 2013 Chin. Phys. B 22 027304
[6] Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[7] Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann J M, Roure M C, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S 2008 Solid State Electron. 52 1285
[8] De Jaeger B, Kaczer B, Zimmerman P, Opsomer K, Winderickx G, van Steenbergen J, van Moorhem E, Bonzom R, Leys F, Arena C, Bauer M, Werkhoven C, Meuris M, Heyns M 2007 Semicond. Sci. Technol. 22 S221
[9] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[10] Joachim H O, Yamaguchi Y, Ishikawa K, Inoue Y, Nishimura T 1993 IEEE Trans. Electron Dev. 40 1812
[11] Suzuki K, Pidin S 2003 IEEE Trans. Electron Dev. 50 1297
[12] Ortiz-Conde A, Rodrguez J, Garca Sanchez F J, Liou J J 1998 Solid State Electron. 42 1743
[13] Sim J H, Kuo J B 1993 IEEE Trans. Electron Dev. 40 755
[14] Hu P H, Wu Y S, Su P 2009 Semicond. Sci. Technol. 24 045017
[15] Yan R H, Abbas O, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[16] Balestra F, Benachir M, Brini J, Ghibaudo G 1990 IEEE Trans. Electron Dev. 37 2303
[17] Salcedo J A, Ortiz-Conde A, Sánchez E J G, Muci J, Liou J J, Yue Y 2001 IEEE Trans. Electron Dev. 48 809
[18] El Hamid H A, Guitart J R, Iñ\’iguez B 2007 IEEE Trans. Electron Dev. 54 1402
[19] van Den Daelea W, Augendre E, Le Royer C, Damlencourt J F, Grandchamp B, Cristoloveanu S 2010 Solid State Electron. 54 205
[20] Omura Y, Konishi H, Sato S 2006 IEEE Trans. Electron Dev. 53 677
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[1] Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y, Wong H S P 2001 Proc. IEEE 89 259
[2] Qin S S, Zhang H M, Hu H Y, Qu J T, Wang G Y, Xiao Q, Shu Y 2011 Acta Phys. Sin. 60 058501 (in Chinese) [秦珊珊, 张鹤鸣, 胡辉勇, 屈江涛, 王冠宇, 肖庆, 舒钰 2011 60 058501]
[3] Choi Y K, Asano K, Lindert N, Subramanian V, King T J, Bokor J, Hu C 2000 IEEE Electron Dev. Lett. 21 254
[4] Zhang X F, Xu J P, Lai P T, Li C X, Guan J G 2007 Chin. Phys. 16 3820
[5] Luo X R, Luo Y C, Fan Y, Hu G Y, Wang X W, Zhang Z Y, Fan Y H, Cai J Y, Wang P, Zhou K 2013 Chin. Phys. B 22 027304
[6] Hu M J, Li C, Xu J F, Lai H K, Chen S Y 2011 Acta Phys. Sin. 60 078102 (in Chinese) [胡美娇, 李成, 徐剑芳, 赖虹凯, 陈松岩 2011 60 078102]
[7] Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann J M, Roure M C, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S 2008 Solid State Electron. 52 1285
[8] De Jaeger B, Kaczer B, Zimmerman P, Opsomer K, Winderickx G, van Steenbergen J, van Moorhem E, Bonzom R, Leys F, Arena C, Bauer M, Werkhoven C, Meuris M, Heyns M 2007 Semicond. Sci. Technol. 22 S221
[9] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[10] Joachim H O, Yamaguchi Y, Ishikawa K, Inoue Y, Nishimura T 1993 IEEE Trans. Electron Dev. 40 1812
[11] Suzuki K, Pidin S 2003 IEEE Trans. Electron Dev. 50 1297
[12] Ortiz-Conde A, Rodrguez J, Garca Sanchez F J, Liou J J 1998 Solid State Electron. 42 1743
[13] Sim J H, Kuo J B 1993 IEEE Trans. Electron Dev. 40 755
[14] Hu P H, Wu Y S, Su P 2009 Semicond. Sci. Technol. 24 045017
[15] Yan R H, Abbas O, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[16] Balestra F, Benachir M, Brini J, Ghibaudo G 1990 IEEE Trans. Electron Dev. 37 2303
[17] Salcedo J A, Ortiz-Conde A, Sánchez E J G, Muci J, Liou J J, Yue Y 2001 IEEE Trans. Electron Dev. 48 809
[18] El Hamid H A, Guitart J R, Iñ\’iguez B 2007 IEEE Trans. Electron Dev. 54 1402
[19] van Den Daelea W, Augendre E, Le Royer C, Damlencourt J F, Grandchamp B, Cristoloveanu S 2010 Solid State Electron. 54 205
[20] Omura Y, Konishi H, Sato S 2006 IEEE Trans. Electron Dev. 53 677
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