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Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2023, 72(22): 227303.
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Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu. Vertical short-channel MoS2 field-effect transistors. Acta Physica Sinica,
2022, 71(21): 218502.
doi: 10.7498/aps.71.20220738
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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica,
2014, 63(14): 148502.
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin. Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2014, 63(23): 236102.
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica,
2014, 63(23): 237302.
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Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong. Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET. Acta Physica Sinica,
2014, 63(8): 087301.
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica,
2013, 62(10): 108501.
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Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica,
2012, 61(10): 107301.
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Cao Lei, Liu Hong-Xia. Study of the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Acta Physica Sinica,
2012, 61(24): 247303.
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Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica,
2012, 61(16): 166101.
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Liu Qi-Neng. The defect mode and the quantum effect of light wave in cylindrical anisotropic photonic crystal. Acta Physica Sinica,
2011, 60(1): 014217.
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2011, 60(5): 058502.
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2010, 59(11): 8131-8136.
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Yuan Ning-Yi, Chen Xiao-Shuang, Ding Jian-Ning, He Ze-Jun, Li Feng, Lu Wei. Quantum effect and up-conversion luminescence of ZnO-SiO2 composite films synthesized by sol-gel technique. Acta Physica Sinica,
2009, 58(4): 2649-2653.
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Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun. Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica,
2009, 58(7): 4948-4952.
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Liu Kui, Ding Hong-Lin, Zhang Xian-Gao, Yu Lin-Wei, Huang Xin-Fan, Chen Kun-Ji. Simulation of a triple-gate single electron FET memory with a quantum dot floating gate and a quantum wire channel. Acta Physica Sinica,
2008, 57(11): 7052-7056.
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
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Wang Yue-Yue, Yang Qin, Dai Chao-Qing, Zhang Jie-Fang. Solitary wave solution of Zakharov equation with quantum effect. Acta Physica Sinica,
2006, 55(3): 1029-1034.
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica,
2005, 54(2): 897-901.
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Tong Jian-Nong, Zou Xue-Cheng, Shen Xu-Bang. Study on the corner effect in new grooved-gate nMOSFET. Acta Physica Sinica,
2004, 53(9): 2905-2909.
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