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结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si1－βGeβ中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值.
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关键词:
- 应变硅金属氧化物半导体场效应管 /
- 漏致势垒降低 /
- 二维泊松方程 /
- 阈值电压模型
Based on strained silicon metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation, and the threshold voltage model is built. According to calculation results, the dependence of threshold voltage on germanium content of relaxed Si1－βGeβ, channel length, voltage of drain, doping content of substrate and channel are studied in detail, and the influence of drain-induced barrier-lowering on scaled strained silicon MOSFET is obtained, which can provide important reference for the design of strained silicon MOSFET device and circuit.-
Keywords:
- strained Si metal-oxide semiconductor field transistor /
- drain-induced barrier-lowering /
- two-dimensional Poisson equation /
- threshold voltage model
[1] Dhar S, Kosina H, Selberherrr S 2005 IEEE Trans. Electron Dev. 52 527
[2] Nelson S F, Iamail K, Chu J O, Meyerson B S 1993 Appl. Phys. Lett. 63 367
[3] Chan V, Rim K, Ieong M, Yang S, Malik R, Teh Y W, Yang M, Ouyang Q Q 2005 IEEE Custom Integrated Circuits Conference p667
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827
[5] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys.Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[6] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、 崔晓英、 胡辉勇、 戴显英、 宣荣喜 2007 56 3504] 〖7] Ouyang Q Q, Chen X D, Mudanai S P, Wang X, Kencke D L, Tasch A F, Register L F, Banerjee S K 2000 IEEE Trans. Electron Dev. 47 1943
[7] Chamberlain S G, Ramanan S 1986 IEEE Trans. Electron Dev. 33 1745
[8] Deen M J, Yan Z X 1990 IEEE Trans. Electron Dev. 37 1707
[9] Troutman R R 1979 IEEE Trans. Electron Dev. 26 461
[10] Eitan B, Frohman-Bentchkowsky D 1982 IEEE Trans. Electron Dev. 29 254
[11] Liu S, Nage L W 1982 IEEE J. Solid Circuit 17 983
[12] Balamurugan N B, Sankaranarayanan K, Suguna M, Balasubadra K, Kalaivani 2007 IEEE-ICSCN p382
[13] Abe S, Miyazawa Y, Nakajima Y, Hanajiri T, Toyabe T, Sugano T 2009 IEEE ULIS 329
[14] Mahato1 S S, Chakraborty1 P, Maiti T K, Bera M K, Mahata C M, Sengupta, Chakraborty A, Sarkar S K, Maiti C K 2008 IEEE Conferences p1
[15] Deen M J, Yan Z X 1992 IEEE Trans. Electron Dev. 39 908
[16] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[17] Tsang Y L, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan H K, Olsen S H, O’Neill A G 2007 IEEE Trans. Electron Dev. 54 3040
[18] Hao Y, Liu H X 2008 Reliability and Failure Mechamism of Micro-Namo Mos Device (Beijing: Science Press) p403 (in Chinese) [郝 跃、 刘红侠 2008 微纳米MOS器件可靠性与失效机理(北京: 科学出版社) p403]
[19] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
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[1] Dhar S, Kosina H, Selberherrr S 2005 IEEE Trans. Electron Dev. 52 527
[2] Nelson S F, Iamail K, Chu J O, Meyerson B S 1993 Appl. Phys. Lett. 63 367
[3] Chan V, Rim K, Ieong M, Yang S, Malik R, Teh Y W, Yang M, Ouyang Q Q 2005 IEEE Custom Integrated Circuits Conference p667
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827
[5] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys.Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 57 5918]
[6] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、 崔晓英、 胡辉勇、 戴显英、 宣荣喜 2007 56 3504] 〖7] Ouyang Q Q, Chen X D, Mudanai S P, Wang X, Kencke D L, Tasch A F, Register L F, Banerjee S K 2000 IEEE Trans. Electron Dev. 47 1943
[7] Chamberlain S G, Ramanan S 1986 IEEE Trans. Electron Dev. 33 1745
[8] Deen M J, Yan Z X 1990 IEEE Trans. Electron Dev. 37 1707
[9] Troutman R R 1979 IEEE Trans. Electron Dev. 26 461
[10] Eitan B, Frohman-Bentchkowsky D 1982 IEEE Trans. Electron Dev. 29 254
[11] Liu S, Nage L W 1982 IEEE J. Solid Circuit 17 983
[12] Balamurugan N B, Sankaranarayanan K, Suguna M, Balasubadra K, Kalaivani 2007 IEEE-ICSCN p382
[13] Abe S, Miyazawa Y, Nakajima Y, Hanajiri T, Toyabe T, Sugano T 2009 IEEE ULIS 329
[14] Mahato1 S S, Chakraborty1 P, Maiti T K, Bera M K, Mahata C M, Sengupta, Chakraborty A, Sarkar S K, Maiti C K 2008 IEEE Conferences p1
[15] Deen M J, Yan Z X 1992 IEEE Trans. Electron Dev. 39 908
[16] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[17] Tsang Y L, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan H K, Olsen S H, O’Neill A G 2007 IEEE Trans. Electron Dev. 54 3040
[18] Hao Y, Liu H X 2008 Reliability and Failure Mechamism of Micro-Namo Mos Device (Beijing: Science Press) p403 (in Chinese) [郝 跃、 刘红侠 2008 微纳米MOS器件可靠性与失效机理(北京: 科学出版社) p403]
[19] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 58 4948]
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