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Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, hole scattering mechanism in strained Si/(001)Si1-xGex, namely, tetragonal strained Si is studied, including ionized impurity, acoustic phonon, non-polar optical phonon and total scattering rates. It is found that the total scattering rate of hole in strained Si/(001)Si1-xGex decreases obviously with the increase of stress when Ge fraction (x) is less than 0.2 and the values continue to show a constant tendency. The total hole scattering rate of strained Si/(001)Si1-xGex decreases about 66% at most in comparison with one of unstrained Si. The hole mobility enhancement in strained Si material is due to the decrease of hole scattering rate. The result can provide valuable references for the research of hole mobility of strained Si materials and the design of PMOS devices.
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Keywords:
- strained Si /
- scattering rates /
- mobility
[1] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 ActaPhys. Sin. 57 5918 (in Chinese) [宋建军,张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 57 5918]
[2] Song J J, Zhang H M, Xuan R X, Hu H Y, Dian X Y 2009 ActaPhys. Sin. 58 4958 (in Chinese) [宋建军,张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 58 4958]
[3] Liu H H, Duan X F, Xu Q X 2009 Micron 40 274
[4] Guillaume T, Mouis M 2006 Solid-State Electronics 50 701
[5] Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics52 1437
[6] Song J J, Zhang H M, Hu H Y, Fu Q 2009 Science in China 52 546
[7] Demaring N V, Gruetzmacher D A 2008 International Conferenceon Advanced Semiconductor Devices and Microsystems, ASDAM91-94
[8] Wang E X, Matagne P, Shifren L 2006 IEEE Trans. Electron Dev.53 1840
[9] Chen X B, Yan J M, Fang Z 1979 Introduction to Solid StatePhysics (Beijing: Defense Industry Press) p190 (in Chinese ) [陈星弼, 鄢俊明, 方政 1979 固体物理导论 (北京:国防工业出版社)190]
[10] Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing:Defense Industry Press) p367 (in Chinese) [刘恩科,朱秉升, 罗晋生 1994 半导体物理学 (北京:国防工业出版社) 367]
[11] Jacoboni C, Reggiani L 1983 Rev. Mod. Phys. 55 648
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[1] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 ActaPhys. Sin. 57 5918 (in Chinese) [宋建军,张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 57 5918]
[2] Song J J, Zhang H M, Xuan R X, Hu H Y, Dian X Y 2009 ActaPhys. Sin. 58 4958 (in Chinese) [宋建军,张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 58 4958]
[3] Liu H H, Duan X F, Xu Q X 2009 Micron 40 274
[4] Guillaume T, Mouis M 2006 Solid-State Electronics 50 701
[5] Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics52 1437
[6] Song J J, Zhang H M, Hu H Y, Fu Q 2009 Science in China 52 546
[7] Demaring N V, Gruetzmacher D A 2008 International Conferenceon Advanced Semiconductor Devices and Microsystems, ASDAM91-94
[8] Wang E X, Matagne P, Shifren L 2006 IEEE Trans. Electron Dev.53 1840
[9] Chen X B, Yan J M, Fang Z 1979 Introduction to Solid StatePhysics (Beijing: Defense Industry Press) p190 (in Chinese ) [陈星弼, 鄢俊明, 方政 1979 固体物理导论 (北京:国防工业出版社)190]
[10] Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing:Defense Industry Press) p367 (in Chinese) [刘恩科,朱秉升, 罗晋生 1994 半导体物理学 (北京:国防工业出版社) 367]
[11] Jacoboni C, Reggiani L 1983 Rev. Mod. Phys. 55 648
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