| [1] |
Zhao Ze-Xian, Xu Meng, Peng Cong, Zhang Han, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng. Inkjet printing high mobility indium-zinc-tin oxide thin film transistor. Acta Physica Sinica,
2024, 73(12): 128501.
doi: 10.7498/aps.73.20240361
|
| [2] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
doi: 10.7498/aps.70.20210700
|
| [3] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
doi: 10.7498/aps.69.20190640
|
| [4] |
Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica,
2016, 65(16): 168501.
doi: 10.7498/aps.65.168501
|
| [5] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica,
2016, 65(3): 038402.
doi: 10.7498/aps.65.038402
|
| [6] |
Wang Kai, Xing Yan-Hui, Han Jun, Zhao Kang-Kang, Guo Li-Jian, Yu Bao-Ning, Deng Xu-Guang, Fan Ya-Ming, Zhang Bao-Shun. Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica,
2016, 65(1): 016802.
doi: 10.7498/aps.65.016802
|
| [7] |
Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng. High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica,
2015, 64(16): 168501.
doi: 10.7498/aps.64.168501
|
| [8] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
doi: 10.7498/aps.62.157202
|
| [9] |
Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin. The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors. Acta Physica Sinica,
2013, 62(7): 077302.
doi: 10.7498/aps.62.077302
|
| [10] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng. Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica,
2012, 61(20): 207301.
doi: 10.7498/aps.61.207301
|
| [11] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
doi: 10.7498/aps.61.047301
|
| [12] |
Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue. Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2012, 61(5): 057202.
doi: 10.7498/aps.61.057202
|
| [13] |
Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica,
2011, 60(1): 017205.
doi: 10.7498/aps.60.017205
|
| [14] |
Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica,
2010, 59(10): 7333-7337.
doi: 10.7498/aps.59.7333
|
| [15] |
Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong. High mobility polymer thin-film transistors. Acta Physica Sinica,
2009, 58(12): 8566-8570.
doi: 10.7498/aps.58.8566
|
| [16] |
Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue. Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica,
2008, 57(7): 4487-4491.
doi: 10.7498/aps.57.4487
|
| [17] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
doi: 10.7498/aps.56.4117
|
| [18] |
Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING. ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica,
2000, 49(7): 1394-1399.
doi: 10.7498/aps.49.1394
|
| [19] |
CHEN JIAN-XIN, LI AI-ZHEN, REN YAO-CHENG, K.FRIEDLAND. SHUBNIKOV-DE HAAS OSCILLATIONS IN PSEUDOMORPHIC MODULATION-DOPED InGaAs/InAlAs HETEROSTRUCTURE. Acta Physica Sinica,
1998, 47(5): 796-801.
doi: 10.7498/aps.47.796
|
| [20] |
ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN. SHUBNIKOV-DE HAAS OSCILLATION IN n-Hg1-xCdxTe. Acta Physica Sinica,
1987, 36(1): 114-119.
doi: 10.7498/aps.36.114
|
下载:
