STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER

Journal Name:

Year:

Issue:

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER

Citation:

Next Previous

GUI YONG-SHENG, CHU JUN-HAO, CAI YI, HENG GUO-ZHEN, TANG DING-YUAN

Acta Phys. Sin., 1998, 47(8): 1354-1360.

Abstract
By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data.The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.
Authors and contacts
GUI YONG-SHENG²,

CHU JUN-HAO²,

CAI YI¹,

HENG GUO-ZHEN²,

TANG DING-YUAN²

(1)昆明物理研究所，昆明 650223; (2)中国科学院上海技术物理研究所，红外物理国家重点实验室，上海 200083
References

Cited By