Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305
| Citation: |
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305
|
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305
| Citation: |
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materialsJ. Acta Physica Sinica, 2011, 60(11): 117305. DOI: 10.7498/aps.60.117305
|
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