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Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

Zhou Wen-Zheng Lin Tie Shang Li-Yan Huang Zhi-Ming Zhu Bo Cui Li-Jie Gao Hong-Ling Li Dong-Lin Guo Shao-Ling Gui Yong-Sheng Chu Jun-Hao

Citation:

Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao
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  • Abstract views:  7933
  • PDF Downloads:  944
  • Cited By: 0
Publishing process
  • Received Date:  05 September 2006
  • Accepted Date:  25 September 2006
  • Published Online:  20 July 2007

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