Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors

Li Bin; Liu Hong-Xia; Yuan Bo; Li Jin; Lu Feng-Ming

doi:10.7498/aps.60.017202

Search

x

Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2011, 60(1): 017202. DOI: 10.7498/aps.60.017202

Citation:

Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2011, 60(1): 017202. DOI: 10.7498/aps.60.017202

Citation:

Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2011, 60(1): 017202. DOI: 10.7498/aps.60.017202