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2020, 69(15): 157303.
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2019, 68(16): 166801.
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Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica,
2017, 66(16): 167301.
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2014, 63(8): 080202.
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2013, 62(15): 150202.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica,
2009, 58(7): 4925-4930.
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Ji Zi-Wu, Mino Hirofumi, Oto Kenichi, Muro Kiyofumi, Akimoto Ryoichi, Takeyama Shojiro. Magnetic field effect of charged excitons in n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica,
2008, 57(10): 6609-6613.
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2007, 56(10): 6013-6018.
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Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao. Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica,
2006, 55(4): 2044-2048.
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Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
2006, 55(7): 3677-3682.
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2004, 53(2): 596-600.
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Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi. Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica,
2004, 53(7): 2320-2324.
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Zhu Yun, Wang Tai-Hong. Investigations of three-terminal electronic measurement on quantum dot devices. Acta Physica Sinica,
2003, 52(3): 677-682.
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Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica,
2003, 52(7): 1756-1760.
doi: 10.7498/aps.52.1756
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