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The two-dimensional, single-layer MoS2 with a direct band-gap of 1.8 eV, which makes it very suitable for nanoelectronic applications, such as field-effect transistors, has aroused great interest because of its distinctive electronic, optical, and catalytic properties. In this paper, we present a detailed theoretical study of the electronic transport property of single-layer MoS2 on the basis of the usual momentum-balance equation. We obtain the analytical electric mobility at low temperature. It shows that the electric mobility of MoS2 is linear with respect to substrate dielectric constant squared and the rate between the electron density and charged impurity density at low temperature. It is found that by using relatively high dielectric constant materials as substrates, reducing impurity densities and increasing carrier densities high mobilities in MoS2-substrate wafer systems can be achieved.
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Keywords:
- MoS2 /
- mobility /
- electronic transport /
- balance-equation
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[7] Yin Z Y, Li H, Li H, Jiang L, Shi Y M, Sun Y H, Lu G, Zhang Q, Chen X D, Zhang H 2012 ACS Nano 6 74
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[10] Lee H S, Min S W, Chang Y G, Park M K, Nam T W, Kim H, Kim J H, Ryu S M, Im S 2012 Nano Lett. 12 3695
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[12] Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 61 227102]
[13] Ye L X 2007 Semiconductor Physics (Vol. 1) (BeiJing: Higher Education Press) (in Chinese) [叶良修 2007 半导体物理学 (上卷) (北京高等教育出版社)]
[14] Lei X L, Ting C S 1985 J. Phys. C 18 77
[15] Mahan G D 2000 Many-Particle Physics (New York: Kluwer Academic/Plenum Publishers) p325
[16] Zhang X L, Hayward D O, Mingos D M 2002 Catalysis Lett. 84 225
[17] Hwang E H, Adam S, Sarma S D 2007 Phys. Rev. Lett. 98 186806
[18] Novoselov K S, Geim A K, Morozov S V, Zhang D Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[19] Zhang J F, Yue H, Zhang J C, Ni J Y 2008 Sci. China F 51 780
[20] Ando T 1982 Rev. Mod. Phys. 54 437
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[1] Castro Neto A H, Novoselov K 2011 Rep. Prog. Phys. 74 082501
[2] Liu W L, Chen C, Shen Q W 2008 Chin. Phys. Lett. 25 227
[3] Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnol. 6 147
[4] Wang H, Yu L L, Lee Y H 2012 Nano Lett. 12 4674
[5] Kim S, Konar A, Hwang W S Lee J H, Lee J Y, Yang J Y, Jung C H, Kim H S, Yoo J B, Choi J Y, Jin Y W, Lee S Y, Jena D D, Choi W, Kim K 2012 Nature Commun. 3 1011
[6] Mak K F, C Lee H G, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[7] Yin Z Y, Li H, Li H, Jiang L, Shi Y M, Sun Y H, Lu G, Zhang Q, Chen X D, Zhang H 2012 ACS Nano 6 74
[8] Alam K, Lake R K 2012 IEEE Trans. Electron DEC. 59 3250
[9] Wang Q H, Kourosh K Z, Kis A, Coleman J N, Strano M S 2012 Nature Nanotechnol. 7 699
[10] Lee H S, Min S W, Chang Y G, Park M K, Nam T W, Kim H, Kim J H, Ryu S M, Im S 2012 Nano Lett. 12 3695
[11] Yang H J, Heo J S, Park S J, Song H J, Seo D H 2012 Science 336 1140
[12] Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 61 227102]
[13] Ye L X 2007 Semiconductor Physics (Vol. 1) (BeiJing: Higher Education Press) (in Chinese) [叶良修 2007 半导体物理学 (上卷) (北京高等教育出版社)]
[14] Lei X L, Ting C S 1985 J. Phys. C 18 77
[15] Mahan G D 2000 Many-Particle Physics (New York: Kluwer Academic/Plenum Publishers) p325
[16] Zhang X L, Hayward D O, Mingos D M 2002 Catalysis Lett. 84 225
[17] Hwang E H, Adam S, Sarma S D 2007 Phys. Rev. Lett. 98 186806
[18] Novoselov K S, Geim A K, Morozov S V, Zhang D Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[19] Zhang J F, Yue H, Zhang J C, Ni J Y 2008 Sci. China F 51 780
[20] Ando T 1982 Rev. Mod. Phys. 54 437
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