Investigation of spin-orbit torques in rare-earth Dy/Pt/[Co/Pt]<sub>3</sub> magnetic multilayers

LI Dong; LAI Yanping; LIU Xiyue

doi:10.7498/aps.74.20250186

Abstract

Spin-orbit torque (SOT) based on the spin-orbit coupling (SOC) effect has received increasing attention in magnetic information storage, logical operation and neuron simulation devices because it can effectively manipulate magnetization switching, chiral magnetic domain walls, and magnetic skyrmion motions. Further improvement of the SOT efficiency and reduction of the driving current density are crucial scientific problems to be solved for high-density and low-power applications of SOT-based spintronic devices. The heavy rare-earth metal dysprosium (Dy) possesses a relatively strong SOC due to the partially filled f orbital electrons (4f¹⁰), which is expected to generate spin Hall torques. In this work, the influences of Dy thickness on the SOT efficiency and SOT-driven magnetic reversal are explored in the Dy/Pt/[Co/Pt]₃ magnetic multilayers, where the rare-earth Dy and [Co/Pt]₃ are used as a spin-source layer and a perpendicularly magnetized ferromagnetic layer, respectively. A series of Dy/Pt/[Co/Pt]₃ heterostructures with the values of Dy layer thickness (t_Dy) of 1, 3, 5 and 7 nm is fabricated by ultrahigh-vacuum magnetron sputtering. The perpendicular magnetic anisotropy, SOT efficiency, spin Hall angle and current-induced magnetization switching are characterized using the magnetic property and electrical transport measurements. The results show that the switching field and magnetic anisotropic field decrease with the increase of t_Dy, revealing that the magnetic parameters can be regulated by the bottom Dy layer due to their structural sensitivity. However, both damping-like SOT efficiency and effective spin Hall angle ($\theta _{{\text{SH}}}^{{\text{eff}}} $) gradually increase with the increase of t_Dy, indicating that the rare-earth Dy can provide additional spin current to enhance the SOT efficiency apart from the contribution of Pt/[Co/Pt]₃. Particularly, the maximum value of $\theta _{{\text{SH}}}^{{\text{eff}}} $ of 0.379±0.008 is achieved when t_Dy is 7 nm. According to the fitting analysis of the drift-diffusion model, the intrinsic spin Hall angle and spin diffusion length of the rare-earth Dy are extracted to be 0.260±0.039 and (2.234±0.383) nm, respectively, suggesting that Dy can be used as an ideal spin-source material. In addition, the critical switching current density (J_c) gradually decreases with the increase of t_Dy, and J_c reaches a minimum value of approximately 5.3×10⁶ A/cm² at t_Dy = 7 nm, which is mainly attributed to the increase of the damping-like SOT and slight decrease of the switching field. These results experimentally demonstrate a strong spin Hall effect of the rare-earth Dy, and provide a feasible route for designing SOT-based spintronic devices with low-power dissipation.

Keywords:

Authors and contacts

1.
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030006, China
2.
Shanxi Key Laboratory of Advanced Magnetic Materials and Devices, Research Institute of Materials Science, Shanxi Normal University, Taiyuan 030006, China

Corresponding author: LI Dong, lidong@sxnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52001190) and the Fundamental Research Program of Shanxi Province, China (Grant No. 202303021221151).

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References

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Cited By

图 1 (a) Dy/Pt/[Co/Pt]₃多层膜的结构示意图; (b)霍尔器件的光学显微图像和电输运测量示意图; (c)不同Dy厚度样品的反常霍尔曲线, 测试电流为1 mA, 插图为t = 7 nm样品的面内磁滞回线; (d)饱和磁化强度、翻转场和磁各向异性常数随Dy层厚度的变化关系

Figure 1. (a) Schematic diagram of a Dy/Pt/[Co/Pt]₃ stack; (b) optical image of the Hall device accompanied by a schematic measurement setup; (c) anomalous Hall loops for stacks with varying Dy layer thicknesses measured at I = 1 mA, and the inset presents the in-plane magnetic hysteresis loop for the stack with t = 7 nm; (d) dependence of M_s, H_sw, and K_u on Dy layer thickness.

DownLoad: Full-Size Img PowerPoint

图 2 类阻尼(a)和类场(b)有效场的测量示意图; 一阶谐波电压(V^ω)和二阶谐波电压(V^2ω)随面内纵向扫描磁场H_L (c)和横向扫描磁场H_T (d)的变化关系

Figure 2. Schematic measurement setups of damping-like (a) and field-like (b) effective fields; representative first (V^ω) and second (V^2ω) harmonic voltages as functions of in-plane longitudinal magnetic field H_L (c) and transverse magnetic field H_T (d).

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图 3 (a)平面霍尔电阻随方位角ϕ的变化关系; 平面霍尔效应修正的类阻尼有效场(b)和类场有效场(c)随正弦电流幅值I₀的依赖关系

Figure 3. (a) Dependence of the planar Hall resistance on the azimuthal angle ϕ for stacks with different Dy layer thicknesses; Calibrated damping-like (b) and field-like (c) effective fields against the amplitude of the input sinusoidal current by considering the planar Hall effect.

DownLoad: Full-Size Img PowerPoint

图 4 类阻尼SOT效率(a)、类场SOT效率(b)和有效自旋霍尔角(c)随Dy层厚度的变化关系

Figure 4. Damping-like SOT efficiency (a), field-like SOT efficiency (b), and effective spin Hall angle (c) as a function of Dy layer thickness.

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图 5 (a) t = 7 nm样品在不同面内辅助场H_x的电流驱动磁矩翻转回线; (b)不同Dy层厚度样品在H_x = +600 Oe的电流驱动磁矩翻转回线; (c)不同Dy层厚度样品的电流驱动磁矩翻转相图; (d) H_x = +600 Oe时Dy/Pt/[Co/Pt]₃, Pt/[Co/Pt]₃和Dy层中临界翻转电流密度以及翻转效率随Dy层厚度的变化关系

Figure 5. (a) Current-driven magnetization switching loops for the stack with t = 7 nm under various in-plane bias magnetic fields; (b) current-driven magnetization switching loops for stacks with different Dy layer thicknesses under H_x = +600 Oe; (c) switching phase diagram for stacks with different Dy layer thicknesses; (d) dependence of the critical switching current density in the Dy/Pt/[Co/Pt]₃, Pt/[Co/Pt]₃ and Dy layers as well as the switching efficiency on Dy layer thickness under H_x = +600 Oe.

DownLoad: Full-Size Img PowerPoint

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map

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[2]	Tudu B, Tiwari A 2017 Vacuum 146 329 Google Scholar
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[5]	Yu G Q 2018 Nat. Electronics. 1 496 Google Scholar
[6]	Cubukcu M, Boulle O, Mikuszeit N, Hamelin C, Brächer T, Lamard N, Cyrille M C, Buda-Prejbeanu L, Garello K, Miron I M 2018 IEEE Trans. Magn. 54 81 Google Scholar
[7]	Liu L, Lee O J, Gudmundsen T J, Ralph D C, Buhrman R A 2012 Phys. Rev. Lett. 109 096602 Google Scholar
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[9]	Fert A, Cros V, Sampaio J 2013 Nat. Nanotechnol. 8 152 Google Scholar
[10]	Liu J H, Wang Z D, Xu T, Zhou H A, Zhao L, Je S G, Im M Y, Fang L, Jiang W J 2022 Chin. Phys. Lett. 39 017501 Google Scholar
[11]	Demidov V E, Urazhdin S, Ulrichs H, Tiberkevich V, Slavin A, Baither D, Schmitz G, Demokritov S O 2012 Nat. Mater. 11 1028 Google Scholar
[12]	Li L Y, Chen L N, Liu R H, Du Y W 2020 Chin. Phys. B 29 117102 Google Scholar
[13]	Miron I M, Garello K, Gaudin G, Zermatten P J, Costache M V, Auffret S, Bandiera S, Rodmacq B, Schuhl A, Gambardella P 2011 Nature 476 189 Google Scholar
[14]	Pai C F, Ou Y, Henrique L, Vilela-Leão L H, Ralph D C, Buhrman R A 2015 Phys. Rev. B 92 064426 Google Scholar
[15]	Liu L, Pai C F, Li Y, Tseng H W, Ralph D C, Buhrman R A 2012 Science 336 555 Google Scholar
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[29]	Zhu L J, Ralph D C, Buhrman R A 2018 Phys. Rev. Appl. 10 031001 Google Scholar
[30]	Reynolds N, Jadaun P, Heron J T, Jermain C L, Gibbons J, Collette R, Buhrman R A, Schlom D G, Ralph D C 2017 Phys. Rev. B 95 064412 Google Scholar
[31]	Ueda K, Pai C F, Tan A J, Mann M, Beach G S D 2016 Appl. Phys. Lett. 108 232405 Google Scholar
[32]	Wong Q Y, Murapaka C, Law W C, Gan W L, Lim G J, Lew W S 2019 Phys. Rev. Appl. 11 024057 Google Scholar
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[34]	Li D, Li M R, Lai Y P, Zhang W, Liu X Y, Quan Z Y, Xu X H 2024 Appl. Phys. Lett. 125 152403 Google Scholar
[35]	Takeuchi Y, Zhang C L, Okada A, Sato H, Fukami S, Ohno H 2018 Appl. Phys. Lett. 112 192408 Google Scholar
[36]	Li D, Ma R, Cui B S, Yun J J, Quan Z Y, Zuo Y L, Xi L, Xu X H 2020 Appl. Surf. Sci. 513 145768 Google Scholar
[37]	Kim J, Sinha J, Hayashi M, Yamanouchi M, Fukami S, Suzuki T, Mitani S, Ohno H 2013 Nat. Mater. 12 240 Google Scholar
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Investigation of spin-orbit torques in rare-earth Dy/Pt/[Co/Pt]₃ magnetic multilayers

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Investigation of spin-orbit torques in rare-earth Dy/Pt/[Co/Pt]3 magnetic multilayers

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Investigation of spin-orbit torques in rare-earth Dy/Pt/[Co/Pt]₃ magnetic multilayers