Influences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial

Feng Qiu-Ju; Xu Rui-Zhuo; Guo Hui-Ying; Xu Kun; Li Rong; Tao Peng-Cheng; Liang Hong-Wei; Liu Jia-Yuan; Mei Yi-Ying

doi:10.7498/aps.63.168101

Abstract

One-dimensional phosphorus doped ZnO nanowires and nanonails are prepared on Si substrate without employing any metal catalyst by chemical vapor deposition method. Field-emission scanning electron microscopy shows that the samples located downstream 1.5 cm away from the source material are of nanowire structure and located 1 cm above source materials of nanonail structure, and the growth mechanisms of phosphorus doped ZnO nanostructures with different morphologies are discussed. The photoluminescence properties of phosphorus doped ZnO nanowires and nanonails are studied at a temperature of 10 K. The phosphorus related acceptor emissions are observed. Furthermore, the current-voltage (I-V) measurement based on the ZnO nanostructures/Si heterojunctions shows a typical semiconductor rectification characteristic with positive open electric fields being 4.8 and 3.2 V, respectively.

Keywords:

Authors and contacts

1.
School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China;
2.
Preparatory Department, School of Science, Dalian Nationalities University, Dalian 116600, China;
3.
School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 10804040, 11004020), the Doctoral Scientific Research Starting Foundation of Liaoning Province, China (Grant No. 20101061), the Natureal Science Foundation of Dalian, China (Grant No. 2010J21DW020), and the Open Foundation of Key Laboratory of Space Laser Communication and Testing Technology of Chinese Academy of Sciences, China (Grant No. KJJG10-1).

References

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Cited By

[1]	Chen X M, Gao X Y, Zhang S, Liu H T 2013 Acta Phys. Sin. 62 049102 (in Chinese) [陈先梅, 郜小勇, 张飒, 刘红涛 2013 62 049102]
[2]	Feng Q J, Jiang J Y, Tang K, L J Y, Liu Y, Li R, Guo H Y, Xu K, Song Z, Li M K 2013 Acta Phys. Sin. 62 057802 (in Chinese) [冯秋菊, 蒋俊岩, 唐凯, 吕佳音, 刘洋, 李荣, 郭慧颖, 徐坤, 宋哲, 李梦轲 2013 62 057802]
[3]	Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 61 052901]
[4]	Xiang B, Wang P W, Zhang X Z, Dayeh S A, Aplin D P R, Soci C, Yu D P, Wang D L 2007 Nano Lett. 7 323
[5]	Yuan G D, Zhang W J, Jie J S, Fan X, Zapien J A, Leung Y H, Luo L B, Wang P F, Lee C S, Lee S T 2008 Nano Lett. 8 2591
[6]	Liu W, Xiu F X, Sun K, Xie Y H, Wang K L, Wang Y, Zou J, Yang Z, Liu J L 2010 J. Am. Chem. Soc. 132 2498
[7]	Umar A, Hahn Y B 2006 Appl. Phys. Lett. 88 173120
[8]	Li W J, Shi E W, Zhong W Z, Yin Z W 1999 J. Cryst. Growth 203 186
[9]	Fan D H, Zhang R, Wang X H 2010 Physica E 42 2081
[10]	Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L 2005 Appl. Phys. Lett. 87 252102
[11]	Geng C, Jiang Y, Yao Y, Meng X, Zapien J A, Lee C S, Lifshitz Y, Lee S T 2004 Adv. Funct. Mater. 14 589
[12]	Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[13]	Shan C X, Liu Z, Hark S K 2008 Appl. Phys. Lett. 92 073103
[14]	Zang C Y, Zang C H, Wang B, Jia Z X, Yue S R, Li Y S, Yang H Q, Zhang Y S 2011 Physica B 406 3479
[15]	Li J C, Li Y F, Yao B, Xu Y, Long S W, Liu L, Zhang Z Z, Zhang L G, Zhao H F, Shen D Z 2013 J. Chem. Phys. 138 034704
[16]	Cao B Q, Lorenz M, Rahm A, von Wenckstern H, Czekalla C, Lenzner J, Benndorf G, Grundmann M 2007 Nanotechnology 18 455707

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Vol. 63, Issue 16 - 2014-08-20

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