Simulation research on single event effect of N-well resistor

Ju An-An; Guo Hong-Xia; Zhang Feng-Qi; Liu Ye; Zhong Xiang-Li; Ouyang Xiao-Ping; Ding Li-Li; Lu Chao; Zhang Hong; Feng Ya-Hui

doi:10.7498/aps.72.20220125

Abstract

In this paper, the single event effect of N-well resistor is simulated by using the technology computer aided design (TCAD) software. The results indicate that a single heavy ion incident into the N-well resistor will make a disturbance in the output current of the device. The working mechanism of the N-well resistor and the physical mechanism introduced by the single event effect are studied. The results show that ion-induced electron-hole pairs neutralize the depletion region in the N-well substance that provides high impedance for the device, resulting in the instantaneous increase of the output current. The larger the destroyed area of the depletion region in the N-well resistor, the higher the peak value of the transient output current is. But the ion-induced disturbance can disappear with the collection of the high concentration of excess carriers in the N-well structure. However, the unique aspect ratio design of the N-well resistor makes only the carriers close to the input drift to output under the electric field. And, the drift motion of carriers takes a lot of time because of the long transport distance, which leads to low efficiency of collecting excess carriers and a long duration of ion-induced disturbance in the N-well resistor. Besides, some other factors that can affect the single event effect in the N-well resistors are also studied in this paper. The results show that the higher the LET value of ions and the farther the incident location from the input, the more serious the single event effect of N-well resistance is. In addition, properly shortening the length of the N-well resistor and increasing the input voltage of the N-well resistor can enhance its resistance to single event effect.

Keywords:

Authors and contacts

1.
Academic Institution of Material Science and Engineer, Xiangtan University, Xiangtan 411105, China
2.
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

Corresponding author: Guo Hong-Xia, guohxnint@126.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11875229, 51872251).

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References

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图 1 N阱结构示意图　(a)位于一款存储器外围电路中的N阱电阻, 图中的rnw3表示三端N阱电阻; (b) N阱电阻的三维结构示意图

Figure 1. Structure diagram of the N-well resistor: (a) An N-well resistor located in a memory peripheral circuit, rnw3 in the figure represents a three terminal N-well resistor; (b) the three-dimensional structure of N well resistor.

DownLoad: Full-Size Img PowerPoint

图 2 N阱电阻TCAD模型示意图　(a)二维模型; (b)三维模型

Figure 2. The diagram of N well resistor TCAD model: (a) Two-dimension model; (b) three-dimension model.

DownLoad: Full-Size Img PowerPoint

图 3 N阱电阻输出电流随输入电压的变化情况

Figure 3. The output current versus the input voltage of the N-well resistor.

DownLoad: Full-Size Img PowerPoint

图 4 在不同输出电压下, 重离子在三维N阱电阻模型中产生的瞬态电流

Figure 4. Ion-induced transient current in the three-dimensional model of N-well resistor under different output voltage.

DownLoad: Full-Size Img PowerPoint

图 5 输出电压为3.3 V时, 不同时刻内N阱电阻内空间电荷区分布　(a) 0 ns; (b) 0.1 ns; (c) 0.6 ns; (d) 5 ns

Figure 5. When output voltage of model is 3.3 V, the space charge distribution in N well resistor at : (a) 0 ns; (b) 0.1 ns; (c) 0.6 ns; (d) 5 ns.

DownLoad: Full-Size Img PowerPoint

图 6 两种不同电压条件下, N阱结构中深度为2 μm处的位置上横向电场强度在不同时刻的分布情况　(a) 输出端电压为3.3 V; (b) 输出端电压为0 V

Figure 6. The distribution of transverse electric field in N well structure at depth of 2 μm location: (a) Output voltage is 3.3 V; (b) output voltage is 0 V.

DownLoad: Full-Size Img PowerPoint

图 7 输出电压为0 V时, 不同时刻内N阱中电子速度分布　(a) 0 ns; (b) 0.1 ns; (c) 0.6 ns; (d) 5 ns; (e) 15 ns ; (f) 30 ns

Figure 7. When output voltage is 0 V, the distribution of electron velocity in N well structure at: (a) 0 ns, (b) 0.1 ns, (c) 0.6 ns, (d) 5 ns, (e) 15 ns and (f) 30 ns moment.

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图 8 输出电压为0 V时, 不同时刻内N阱电阻中空间电荷区的变化　(a) 0 ns; (b) 0.1 ns; (c) 0.6 ns; (d) 5 ns; (e) 15 ns ; (f) 30 ns

Figure 8. When output voltage is 0 V, the change of space charge region in N well structure at (a) 0 ns, (b) 0.1 ns, (c) 0.6 ns, (d) 5 ns, (e) 15 ns, (f) 30 ns moment.

DownLoad: Full-Size Img PowerPoint

图 9 重离子从不同位置入射N阱电阻产生的单粒子瞬态电流

Figure 9. Single event transient current in N-well resistor generated by ion from different incident locations.

DownLoad: Full-Size Img PowerPoint

图 10 不同LET值的重离子在N阱电阻中产生的瞬态电流

Figure 10. Single event transient current in N-well resistor generated by ions with different LET values.

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图 11 不同长度的N电阻中产生的归一化单粒子瞬态电流

Figure 11. Normalization single event transient current generated in N-well resistors with different lengths.

DownLoad: Full-Size Img PowerPoint

图 12 不同输入电压下的N阱电阻产生的单粒子瞬态电流

Figure 12. Single event transient current generated in N-well resistors under different input voltage.

DownLoad: Full-Size Img PowerPoint

表 1 本文模型电阻值与文献[11]中模型电阻值的比较

Table 1. The comparison of calculated resistance values in this paper and results in Ref. [11].

W/μm	本文模型/ kΩ	文献中的简单模型/kΩ	文献中的高级模型/kΩ
2.5	17.14	18.21	17.06
5.0	8.10	8.21	7.91
7.0	5.70	5.70	5.53
10.0	4.29	3.91	3.81
注: 输入电压为3 V, N阱和P衬底的掺杂浓度为5×10¹⁶ cm³, 长度为100 μm.

DownLoad: CSV

表 2 TCAD模型中所使用的具体参数

Table 2. Detailed parameters used in TCAD models

参数	数值
电阻的长度L/μm	24
电阻的宽度W/μm	2
N阱的深度d/μm	4
N阱的掺杂浓度/(10¹⁵ cm^–3)	3
P衬底的掺杂浓度/(10¹⁵ cm^–3)	5
P衬底的深度H/μm	100

DownLoad: CSV

表 3 不同输出端电压下, 重离子在N阱电阻三维模型中产生的瞬态电流参数

Table 3. Detailed parameters of ion-induced transient current in three-dimension model under different output voltage.

输出端电压/V	电流峰值/mA	到达电流峰值时间/ns	瞬态电流持续时间/ns	积分电荷/pC
0	0.81	4.44	63.20	51.56
1.3	0.60	5.44	37.80	33.70
2.3	0.43	5.44	29.40	19.28
3.3	0.25	4.45	17.90	3.03

DownLoad: CSV

map

[1]	姜秀杰, 孙辉先, 王志华, 张利 2005 电子器件 28 1 Google Scholar Jiang X J, Sun H X, Wang Z H, Zhang L 2005 Chin. J. Electron Devices 28 1 Google Scholar
[2]	姜秀杰, 孙辉先 2004 中国空间科学学会空间探测专业委员会学术会议 (中国空间科学学会) 第402—406页 Jiang X J, Sun X H 2004 Academic Conference of Space Exploration Committee of Chinese Society of Space Sciences (China Society of Space Science) pp402–406 (in Chinese)
[3]	卓青青, 刘红侠, 郝跃 2012 61 218501 Google Scholar Zhuo Q Q, Liu H X, Hao Y 2012 Acta Phys. Sin. 61 218501 Google Scholar
[4]	伊腾岳 2019 博士学位论文 (西安: 西安电子科技大学) Yi T Y 2019 Ph. D. Dissertation (Xi’an: Xidian University) (in Chinese)
[5]	卢超, 陈伟, 罗尹虹, 丁李利, 王勋, 赵雯, 郭晓强, 李赛 2020 69 086160 Google Scholar Lu C, Chen W, Luo Y H, Ding L L, Wang X, Zhao W, Guo X Q, Li S 2020 Acta Phys. Sin. 69 086160 Google Scholar
[6]	毕津顺, 刘刚, 罗家俊, 韩郑生 2013 62 208501 Google Scholar Bi J S, Liu G, Luo J J, Han Z S 2013 Acta Phys. Sin. 62 208501 Google Scholar
[7]	Ju A A, Guo H X, Zhang F Q, Ding L L, Du G H, Guo J L, Zhong X L, Wei J N, Pan X Y, Zhang H, 2022 IEEE T. Nucl. Sci. 69 890 Google Scholar
[8]	Holberg A 2002 CMOS Analog Circuit Design (Vol. 2) (New York: Oxford Uiversity Press) p43
[9]	Guido N 1997 Electrical Overstress/Electrostatic Discharge Symposium 97 221
[10]	Atsumi S, Taura T 1998 US Patent 5 986 940 [1998-2-26]
[11]	Booth R V H, McAndrew C C 1997 IEEE T. Electron Dev. 44 809
[12]	Singh R K, Roy J N 2006 Solid-State Electron. 50 1696 Google Scholar
[13]	李月影, 李冰, 何小东 2007 电子与封装 7 39 Google Scholar Li Y Y, Li B, He X D 2007 Electron. Packag. 7 39 Google Scholar
[14]	石晓峰, 罗宏伟, 李斌 2009 电子元件与材料 28 9 Google Scholar SHI X F, Luo H W, Li B 2009 Electron. Compon. mater. 28 9 Google Scholar
[15]	Srinivasan P, Xiong W, Zhao S 2010 IEEE Electron Dev. Lett. 31 1476 Google Scholar
[16]	Luo J, Wang T S, Li D Q, Liu T Q, Hou M D, Sun Y M, Duan J L, Yao H J, Xi K, Ye B, Liu J 2018 Chin. Phys. B 27 076101 Google Scholar
[17]	韩兆芳, 虞勇坚 2014 电子与封装 16 45 Google Scholar Han Z F, Yu Y J 2014 Electron. Packag. 16 45 Google Scholar
[18]	王天岐, 2016 博士毕业论文 (哈尔滨: 哈尔滨工业大学) Wang T Q 2016 Ph. D. Dissertation (Harbin: Harbin Institute of Technology University) (in Chinese)
[19]	张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501 Google Scholar Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 Google Scholar
[20]	程佳 2016 硕士毕业论文 (北京: 中国科学院大学) Chen J 2016 M. S. Dissertation (Beijing: University of Chinese Academy of Sciences) (in Chinese)
[21]	Koike H, Otsuki T, Kimura T, Fukuma M, Hayashi Y, Maejima Y, Amanuma K, Tanabe N, Matsuki T, Saito S, Takeuchi T, Kobayashi S, Kunio T, Hase T, Miyasaka Y, Shohata N, Takada M 1996 IEEE J. Solid-St. Circ. 31 1625 Google Scholar
[22]	刘蓉容 2016 硕士毕业论文 (长沙: 国防科学技术大学) Liu Y Y 2016 M. S. Dissertation (Changsha: National University of Defense Technology) (in Chinese)
[23]	Wang Q Q, Liu H X, Wang S L, Chen S P 2018 IEEE T. Nucl. Sci. 65 2250 Google Scholar

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