NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well

Liu Bi-Wei; Chen Jian-Jun; Chen Shu-Ming; Chi Ya-Qin

doi:10.7498/aps.61.096102

Abstract

In this paper, we investigate the charge sharing collection induced by heavy ion radiation in a tripe well CMOS technology with n+ deep well though 3-D TCAD device simulation. Result shows that n+ deep well will induce the parasitical NPN bipolar transistor, and therefore enhance the charge sharing between NMOS remarkably. The enhancement factor is 24 times that in PNP bipolar in dual well technology. Furthermore, the effects of n-well contact and p-well contact on NPN bipolar are studied. The result shows that the NPN bipolar enhancement factor will decrease with the increase of p-well contact area and with the decreasing of its distance to device, while the NPN bipolar enhancement factor will increase with the increase of n-well contact area.

Keywords:

Authors and contacts

1.
Computer School, National University of Defense Technology, Changsha 410073, China
Funds: Project supported by the Key Program of National Natural Science Foundation of China (Grant Nos. 60836004, 60906014), and the National Natural Science Foundation of China (Grant No. 61006070), the Specialized Research Fund for the Doctoral Program of the Education Ministry, China (Grant No. 20104307120006).

References

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[5]	Amusan O A, Massengill L W, Baze M P, Bhuva B L, Witulski A F, Black J D, Balasubramanian A, Casey M C, Black D A, Ahlbin J R, Reed R A, McCurdy M W 2009 IEEE Trans. Dev. Mat. Rel. 9 311
[6]	Nelson J Gaspard III 2010 Ma. Dissertation (Tennessee, Nashvile: Vanderbilt University)
[7]	Liu F Y, Liu H Z, Liu B W, Liang B, Chen J J 2011 Acta Phys. Sin. 60 046106 (in Chinese) [刘凡宇, 刘衡竹, 刘必慰, 梁斌, 陈建军 2011 60 046106]
[8]	Amusan O A, Casey M C, Bhuva B L, McMorrow D, Gadlage M J, Melinger J S, Massengill L W 2009 IEEE Trans. Nucl. Sci. 56 3065
[9]	Liu B W, Chen S M, Liang B, Liu Z, Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[10]	Gasiot G, Giot D, Roche P 2007 IEEE Trans. Nucl. Sci. 54 2468
[11]	Giot D, Philippe Roche, Gilles Gasiot, Reno Harboe-Sorensen 200 IEEE Trans. Nucl. Sci. 54 904
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[14]	Liu Z, Chen S M, Liang B, Liu B W, Zhao Z Y 2010 Acta Phys. Sin. 60 649 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 2010 59 649]
[15]	Ahlbin J R, Gadlage M J, Ball D R, Witulski A W, Bhuva B L, Reed R A, Vizkelethy G, Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 3380

Cited By

[1]	Zoutendyk J A, Schwartz H R, Nevill L R 1988 IEEE Trans. Nucl Sci 35 1644
[2]	Olson B D, Ball D R, Warren K M, Massengill L W, Haddad N F, Doyle S E, McMorrow D 2005 IEEE Trans. Nucl. Sci. 52 2132
[3]	Olson B D, Amusan O A, Sandeepan Dasgupta, Massengill L W, Witulski A F, Bhuva B L, Alles M L, Warren K M, Ball D R 2007 IEEE Trans. Nucl Sci 54 894
[4]	Amusan O A, Witulski A F, Massengill L W, Bhuva B L, Fleming P R, Alles M L, Sternberg A L, Black J D, Schrimpf R D 2006 IEEE Trans. Nucl. Sci. 53 3253
[5]	Amusan O A, Massengill L W, Baze M P, Bhuva B L, Witulski A F, Black J D, Balasubramanian A, Casey M C, Black D A, Ahlbin J R, Reed R A, McCurdy M W 2009 IEEE Trans. Dev. Mat. Rel. 9 311
[6]	Nelson J Gaspard III 2010 Ma. Dissertation (Tennessee, Nashvile: Vanderbilt University)
[7]	Liu F Y, Liu H Z, Liu B W, Liang B, Chen J J 2011 Acta Phys. Sin. 60 046106 (in Chinese) [刘凡宇, 刘衡竹, 刘必慰, 梁斌, 陈建军 2011 60 046106]
[8]	Amusan O A, Casey M C, Bhuva B L, McMorrow D, Gadlage M J, Melinger J S, Massengill L W 2009 IEEE Trans. Nucl. Sci. 56 3065
[9]	Liu B W, Chen S M, Liang B, Liu Z, Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[10]	Gasiot G, Giot D, Roche P 2007 IEEE Trans. Nucl. Sci. 54 2468
[11]	Giot D, Philippe Roche, Gilles Gasiot, Reno Harboe-Sorensen 200 IEEE Trans. Nucl. Sci. 54 904
[12]	Giot D, Philippe Roche, Gilles Gasiot, Jean-Luc Autran, Reno Harboe-Sorensen 2008 IEEE Trans. Nucl. Sci. 55 2408
[13]	Ahlbin J R, Bhuva B L, Gadlage M J, Massengill L W, Narasimham B, Eaton P H 2009 IEEE Trans. Nucl. Sci. 56 3050
[14]	Liu Z, Chen S M, Liang B, Liu B W, Zhao Z Y 2010 Acta Phys. Sin. 60 649 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 2010 59 649]
[15]	Ahlbin J R, Gadlage M J, Ball D R, Witulski A W, Bhuva B L, Reed R A, Vizkelethy G, Massengill L W 2010 IEEE Trans. Nucl. Sci. 57 3380

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Vol. 61, Issue 9 - 2012-05-05

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