Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET

Zhuo Qing-Qing; Liu Hong-Xia; Hao Yue

doi:10.7498/aps.61.218501

Abstract

The single event effects in NMOSFET at different values of drain bias, gate length and striking location are thoroughly analyzed by two-dimensional numerical simulator in this paper. The results show that single event transient current increases with the increase of drain bias and with the decrease of gate length. Furthermore, single event transient current varies with the electric field at some places in the device. The present study provides important guidance on the devices design of mitigating the single event effects.

Keywords:

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076097,60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 200807010010).

References

[1]	Dodd P E 2005 IEEE Trans. Dev. Mater. Rel. 5343
[2]	Dodd P E, Massengill L W 2003 IEEE Trans. Nucl. Sci. 50 583
[3]	Dodd P E 2004 IEEE Trans. Nucl. Sci. 51 3278
[4]	Tao W, Li C, Dinh A, Bhuva B 2009 IEEE Trans. Nucl. Sci. 56 3556
[5]	Gouker P, Brandt J, Wyatt P, Tyrrell P, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[6]	Gadlage M J, Gouker P, Bhuva B L, Narasimham B, Schrimpf R D 2009 IEEE Trans. Nucl. Sci. 56 3483
[7]	Kobayashi D, Saito H, Hirose K 2007 IEEE Trans. Nucl. Sci. 54 1037
[8]	Zhang Q X, Hou M D, Liu J, Jin Y F, Zhu Z Y, Sun Y M 2004 Acta Phys. Sin. 43 566 (in Chinese) [张庆祥, 侯明东, 刘杰, 金运范, 朱智勇, 孙友梅 2004 43 566]
[9]	Liu Z, Chen S M, Liang B, Liu B W, Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 59 649]
[10]	ISE (Integrated Systems Engineering) TCAD Manual 2003 ISE Inc.

Cited By

[1]	Dodd P E 2005 IEEE Trans. Dev. Mater. Rel. 5343
[2]	Dodd P E, Massengill L W 2003 IEEE Trans. Nucl. Sci. 50 583
[3]	Dodd P E 2004 IEEE Trans. Nucl. Sci. 51 3278
[4]	Tao W, Li C, Dinh A, Bhuva B 2009 IEEE Trans. Nucl. Sci. 56 3556
[5]	Gouker P, Brandt J, Wyatt P, Tyrrell P, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B 2008 IEEE Trans. Nucl. Sci. 55 2854
[6]	Gadlage M J, Gouker P, Bhuva B L, Narasimham B, Schrimpf R D 2009 IEEE Trans. Nucl. Sci. 56 3483
[7]	Kobayashi D, Saito H, Hirose K 2007 IEEE Trans. Nucl. Sci. 54 1037
[8]	Zhang Q X, Hou M D, Liu J, Jin Y F, Zhu Z Y, Sun Y M 2004 Acta Phys. Sin. 43 566 (in Chinese) [张庆祥, 侯明东, 刘杰, 金运范, 朱智勇, 孙友梅 2004 43 566]
[9]	Liu Z, Chen S M, Liang B, Liu B W, Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 59 649]
[10]	ISE (Integrated Systems Engineering) TCAD Manual 2003 ISE Inc.

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Catalog

Vol. 61, Issue 21 - 2012-11-05

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