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Experimental results of irradiation effects are given for Floating gate ROMs. The proton and neutron irradiation effects in FLASH ROM and EEPROM are total-dose effects rather than single event effects. This is confirmed by γ irradiation. There is a fluence dose threshold. Errors occur when the fluence dose is above the threshold, whereas no error occurs below this threshold. Data errors occur in devices that are in measuring during irradiation or irradiated in power on mode, thus new data cannot be written in these devices with programmer. However, under more fluence dose, there can be no error in devices in power off mode, and new data can be written in these deviceswith programmer. At the beginning of the occurrence of errors, the address and value of the error are at random.
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Keywords:
- FLASH ROM /
- EEPROM /
- γ-ray /
- single event effects /
- total dose effects
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[1] Schwartz H R et al 1977 IEEE Trans. Nuc. Sci.NS-442315
[2] Nguyen D N et al 1999 IEEE Trans. Nuc. Sci.NS-461744
[3] Wrobel T F et al 1989 IEEE Trans. Nuc. Sci. NS-362241
[4] Snyder E S et al 1989 IEEE Trans. Nuc. Sci. NS-362131
[5] Verkasalo R et al 1994 IEEE Trans. Nuc. Sci. NS-412600
[6] M cNulty P J et al 2000 IEEE Trans. Nuc. Sci.NS-472237
[7] Wang J P et al 2000 Acta Phys. Sin. 491331(in Chinese)[王剑屏等2000 491331]
[8] Zhang T Q et al 2001 Acta Phys. Sin.502434(in Chinese)[张廷庆等2001 502434]
[9] He C H et al 1999 Microelectronics 29262(in Chinese)[贺朝会等1999微电子学29262]
[10] He C H et al 2000 Nucl. Elec. Dec. Tech. 20115(in Chinese)[贺朝会等2000核电子学与探测技术20115]
[11] He C H et al 2002 Nucl. Elec. Dec. Tech. 22261(in Chinese)[贺朝会等2002核电子学与探测技术22261]
[12] Guo H X et al 2002 Acta Phys. S in.512315(in Chinese)[郭红霞等2002 512315]
[13] He C H et al 2000 Nucl. Elec. Dec. Tech. 20253(in Chinese)[贺朝会等2000核电子学与探测技术20253]
[14] Liu Y et al 1998 Microelectronics 2832(in Chinese)[刘寅等1998微电子学2832]
[15] Caswell R S et al 1980 Radiation Research 83217
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