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Low-dimensional material represents a special structure of matter. The exploring of its novel properties is an important frontier subject in the fundamental research of condensed matter physics and material science. Owing to its small length scale in one or two dimensions, low-dimensional materials are usually flexible in structure. This feature together with the prompt electronic response to structural deformations enable us to modulate the material properties via a strain way. The main purpose of this paper is to introduce the recent research progress of obtaining novel physical properties by inhomogeneously straining two-dimensional materials, with focusing on two effects, i.e., pseudomagnetic field effect and the flexoelectric effect. Of course, the influence of inhomogeneous strains on electrons is not limited to these two effects. Fundamentally, an inhomogeneous deformation breaks the symmetry of crystalline structure. This may serve as a start point to delineate the structural-properties relation. First, the symmetry breaking can eliminate the degeneracy of energy levels. Second, the symmetry breaking will also cause the heterogeneity of electronic and phonon properties in different parts of the material. In the paper, we also introduce a special method named the generalized Bloch theorem that is suitable for dealing with the inhomogeneous strain patterns at an atomistic level. From the perspective of atomistic simulation, due to the breaking of translational symmetry, the standard quantum mechanical calculations encounter fundamental difficulties in dealing with an inhomogeneous strain, e.g., bending and torsion. The generalized Bloch method overcomes such an obstacle by considering rotational and/or screw symmetries given by bending and/or torsion in solving the eigenvalue problem. As such, quantum mechanical calculations can be still conducted with a relatively small number of atoms. -
Keywords:
- two-dimensional materials /
- strain engineering /
- pseudomagnetic field /
- flexoelectricity /
- generalized Bloch theorem
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图 5 研究材料的结构 (a)石墨烯同素异形体; (b)氮化物XN, X = B, Al, Ga; (c) IV族元素X, X = Si, Ge, Sn的石墨烯类似物; (d)过渡金属二硫族化合物XS2, X = Cr, Mo, W. (a)—(c)中, h为屈曲高度, (d)中, h1和h2为层内距离[98]
Figure 5. Structures of the studied materials: (a) Graphene allotropes; (b) nitrides XN, X = B, Al, Ga; (c) graphene analogues of group-IV elements X, X = Si, Ge, Sn; (d) transition metal dichalcogenides XS2, X = Cr, Mo, W. For (a)–(c), h refers to the buckling height, while in (d), h1 and h2 refer to intralayer distances[98].
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