Bi<sub>2</sub>O<sub>2</sub>Se photoconductive detector with low power consumption and high sensitivity

Li Dan-Yang; Han Xu; Xu Guang-Yuan; Liu Xiao; Zhao Xiao-Jun; Li Geng-Wei; Hao Hui-Ying; Dong Jing-Jing; Liu Hao; Xing Jie

doi:10.7498/aps.69.20201044

Abstract

With the advent of graphene, atomically thin two-dimensional materials receive great attention in both science and technology. However, the characterization of zero-band gap of graphene hinders its applications in semiconductor logic and memory devices. To make up for the imperfection of graphene, one has made efforts to search for other two-dimensional layered materials. The Bi₂O₂Se is an emerging material with very high electron mobility, modest bandgap, and excellent thermal and chemical stability. In this work, high-quality Bi₂O₂Se thin films are synthesized through chemical vapor deposition. The effect of temperature on the morphology and size distribution of Bi₂O₂Se thin film are discussed in detail experimentally. Under an optimized experimental condition, the Bi₂O₂Se thin films with a lateral size of 100 μm are achieved. Interestingly, Bi₂O₂Se nanowires are obtained at a lower growth temperature (620–640 ℃). The photoelectric performances of Bi₂O₂Se on mica and silicon oxide substrate are examined based on a photoconductive mode. At a small bias of 0.5 V, the responsivity and specific detectivity of the rectangular Bi₂O₂Se thin film on the mica substrate reach 45800 A/W and 2.65 × 10¹² Jones, respectively, and the corresponding photoelectric gain is greater than 10⁵. The photoelectric performance of our device is comparable to the best results achieved by other research groups, which may be related to the higher quality and appropriate absorption thickness. The Bi₂O₂Se nanowire and Bi₂O₂Se thin film transferred to Si/SiO₂ by a polystyrene-assisted method also exhibit a good photoresponse under the illumination of a 532 nm laser with a high optical power density (127.4 mW/cm²). The experimental results demonstrate that the Bi₂O₂Se has great potential applications in the optoelectronic devices with low power consumption and high sensitivity.

Keywords:

Authors and contacts

School of Science, China University of Geosciences, Beijing 100083, China

Corresponding author: Li Geng-Wei, ligw@cugb.edu.cn ; Xing Jie, xingjie@cugb.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11974318)

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References

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图 1 (a) 层状Bi₂O₂Se晶体结构示意图; (b) CVD法合成Bi₂O₂Se实验装置示意图; (c)—(e) 云母上Bi₂O₂Se薄膜不同放大倍数的光学照片; (f)云母上Bi₂O₂Se纳米线光学照片

Figure 1. (a) Schematic diagram of the layered Bi₂O₂Se crystal structure; (b) schematic diagram of the CVD experimental setup for synthesis of Bi₂O₂Se film; (c)–(e) optical images of Bi₂O₂Se thin films grown on mica at different magnifications; (f) optical image of Bi₂O₂Se nanowires grown on mica.

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图 2 生长温度对Bi₂O₂Se薄膜形貌及尺寸分布的影响　(a)—(c) 不同生长温度下云母上Bi₂O₂Se薄膜的光学照片; (d) 不同生长温度下Bi₂O₂Se的尺寸分布图, 不同颜色代表不同尺寸范围的Bi₂O₂Se

Figure 2. Effect of growth temperature on the morphology and the size distribution of Bi₂O₂Se films: (a)–(c) Optical images of Bi₂O₂Se thin films grown at 640, 660, 680 ℃, respectively; (d) size distribution of Bi₂O₂Se films prepared at different growth temperatures. Different color denotes different size range.

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图 3 (a) Bi₂O₂Se薄膜的原子力显微镜照片; (b) Bi₂O₂Se薄膜的拉曼光谱, 插图代表A_1g振动模式中各原子间的相对运动

Figure 3. (a) Atomic force microscope image of a typical Bi₂O₂Se thin film with a thickness of 20 nm; (b) Raman spectrum of Bi₂O₂Se thin film. The inset shows the relative motion of atoms in the A_1g mode.

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图 4 (a)云母片上Bi₂O₂Se光电导器件的光学图像; (b)不同光功率密度下Bi₂O₂Se 器件的I_ds-V_ds曲线, 插图为器件时间响应的方波图; (c)不同偏置电压条件下, 光电流(I_ph)与光功率密度的关系; (d)不同偏置电压条件下, 光增益与光功率密度的关系

Figure 4. (a) Optical image of a Bi₂O₂Se photoconductive detector on mica; (b) I_ds-V_ds curves of Bi₂O₂Se device under illumination by laser with different optical powers; (c) light power dependence of photocurrent (I_ph) under different bias; (d) relationship between light gain and light power under different bias.

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图 5 (a) 不同光功率下Bi₂O₂Se纳米线光电探测器的I_ds-V_ds曲线, 插图为器件光学图像; (b) 在不同入射光功率密度下器件的响应度和比探测率

Figure 5. (a) I_ds-V_ds curves of Bi₂O₂Se nanowire photodetector on mica under different light powers. Inset is an optical image of the device. (b) Responsivity and specific detectivity of the device at different light powers.

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图 6 (a) Si/SiO₂衬底上的Bi₂O₂Se器件示意图; (b) 不同光功率下Bi₂O₂Se探测器的I_ds-V_ds行为, 插图为器件的光学图像; (c) I_ph、光增益与光源功率密度的关系; (d) Bi₂O₂Se探测器的响应度和比探测率对光源功率密度的依赖关系

Figure 6. (a) Schematic diagram of the Bi₂O₂Se photodetector on a Si/SiO₂ substrate; (b) I_ds-V_ds of Bi₂O₂Se detector under different light powers, the inset is an optical image of the device; (c) under different biases, the relationship between photocurrent, optical gain and light intensity; (d) light power dependence of responsivity and specific detectivity of the Bi₂O₂Se detector.

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表 1 Bi₂O₂Se与其他2D半导体光电晶体管性能比较(ME, 机械剥离)

Table 1. Comparison of the performance of Bi₂O₂Se with other 2D semiconductor phototransistors (ME represents mechanical exfoliation method).

Materials	Fabrication method	Responsivity/A·W^–1	Detectivity/Jones	Rise time/ms	Reference
MoS₂	ME	434	10¹¹	120	[23]
ReS₂	CVD	1208	10¹⁰	—	[24]
SnS₂	CVD	167	—	100	[25]
SnSe₂	CVD	1000	10¹⁰	14.5	[26]
In₂Se₃	ME	59	10¹¹	0.18	[27]
Graphene	CVD	0.73	10¹³	0.32	[28]
BP	ME	4.8 × 10^–3	—	—	[29]
Bi₂O₂Se	CVD	45800	10¹²	200	This work

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[1]	Fu Q, Yang L, Wang W H, Han A L, Huang J, Du P W, Fan Z Y, Zhang J Y, Xiang B 2015 Adv. Mater. 27 4732 Google Scholar
[2]	Mak K F, Lee C G, Hone J, Shan J, Heinz T F 2010 Phys.Rev. Lett. 105 136805 Google Scholar
[3]	武佩, 胡潇, 张健, 孙连峰 2017 66 218102 Google Scholar Wu P, Hu X, Zhang J, Sun L F 2017 Acta Phys. Sin. 66 218102 Google Scholar
[4]	Tongay S, Zhou J, Ataca C, Lo K, Matthews T S, Li J B, Grossman J C, Wu J Q 2012 Nano Lett. 12 5576 Google Scholar
[5]	Li B, Huang L, Zhong M, Li Y, Wang Y, Li J B, Wei Z M 2016 Adv. Electron. Mater. 2 1600298 Google Scholar
[6]	黄林泉, 周玲玉, 于为, 杨栋, 张坚, 李灿 2015 64 038103 Google Scholar Huang L Q, Zhou L Y, Yu W, Yang D, Zhang J, Li C 2015 Acta Phys. Sin. 64 038103 Google Scholar
[7]	Fu Q D, Zhu C, Zhao X X, et al. 2019 Adv. Mater. 31 1804945 Google Scholar
[8]	Tian X L, Luo H Y, Wei R F, et al. 2018 Adv. Mater. 30 1801021 Google Scholar
[9]	Yin J B, Tan Z J, Hong H, et al. 2018 Nat. Commun. 9 3311 Google Scholar
[10]	Wu J X, Qiu C G, Fu H X, et al. 2019 Nano Lett. 19 197 Google Scholar
[11]	Wu J X, Yuan H T, Meng M M, et al. 2017 Nat. Nanotechnol. 12 530 Google Scholar
[12]	Tong T, Chen Y F, Qin S C, et al. 2019 Adv. Funct. Mater. 29 1905806 Google Scholar
[13]	Liu X L, Li R P, Hong C Y, Huang G F, Pan D F, Ni Z H, Huang Y Q, Ren X M, Cheng Y C, Huang W 2019 Nanoscale 11 20707 Google Scholar
[14]	Luo P, Zhu Ge F W, Wang F K, Lian L Y, Liu K L, Zhang J B, Zhai T Y 2019 ACS Nano 13 9028 Google Scholar
[15]	Wu J X, Liu Y J, Tan Z J, Tan C W, Yin J B, Li T R, Tu T, Peng H L 2017 Adv. Mater. 29 1704060 Google Scholar
[16]	Zhang C C, Wu J X, Sun Y W, Tan C W, Li T R, Tu T, Zhang Y C, Liang Y, Zhou X H, Gao P, Peng H L 2020 J. Am. Chem. Soc. 142 2726 Google Scholar
[17]	Wu J X, Tan C W, Tan Z J, Liu Y J, Yin J B, Dang W H, Wang M Z, Peng H L 2017 Nano Lett. 17 3021 Google Scholar
[18]	Wu Z, Liu G L, Wang Y X, Yang X, Wei T Q, Wang Q J, Liang J, Xu N, Li Z Z, Zhu B, Qi H S, Deng Y, Zhu J 2019 Adv. Funct. Mater. 29 1906639 Google Scholar
[19]	Li J, Wang Z X, Wen Y, Chu J W, Yin L, Cheng R Q, Lei L, He P, Jiang C, Feng L P, He J 2018 Adv. Funct. Mater. 28 1706437 Google Scholar
[20]	Li J, Wang Z X, Chu J W, Cheng Z Z, He P, Wang J J, Yin L, Cheng R Q, Li N N, Wen Y, He J 2019 Appl. Phys. Lett. 114 151104 Google Scholar
[21]	Cheng T, Tan C, Zhang S Q, Teng Tu, Peng H L, Liu Z R 2018 J. Phys. Chem. C 122 19970 Google Scholar
[22]	Pereira A L J, Santamaría-Pérez D, Ruiz-Fuertes J, et al. 2018 J. Phys. Chem. C 122 8853 Google Scholar
[23]	Kufer D, Konstantatos G 2015 Nano Lett. 15 7307 Google Scholar
[24]	Liu E, Long M S, Zeng J W, et al. 2016 Adv. Funct. Mater. 26 1938 Google Scholar
[25]	Huan Y, Zhan X Y, Xu K, Yin L, Cheng Z Z, Jiang C, Wang Z X, He J 2016 Appl. Phys. Lett. 108 013101 Google Scholar
[26]	Zhou X, Gan L, Tian W M, Zhang Q, Jin S Y, Li H Q, Bando Y, Golberg D, Zhai T Y 2015 Adv. Mater. 27 8035 Google Scholar
[27]	Jacobs-Gedrim R B, Shanmugam M, Jain N, Durcan C A, Murphy M T, Murray T M, Matyi R J, Moore R L II, Yu B 2014 ACS Nano 8 514 Google Scholar
[28]	Li X M, Zhu M, Du M D, Lv Z, Zhang L, Li Y C, Yang Y, Yang T T, Li X, Wang K L, Zhu H W, Fang Y 2016 Small 12 595 Google Scholar
[29]	Yuan H T, Liu X G, Afshinmanesh F, Li W, Xu G, Sun J, Lian B, G. Curto A, Ye G J, Hikita Y, Shen Z X, Zhang S C, Chen X H, Brongersma M, Hwang H, Cui Y 2015 Nat. Nanotechnol. 10 707 Google Scholar
[30]	Yu Z R, Aceves-Mijares M, Luna J A L, Deng J X 2009 Proc. SPIE 7381 73811H Google Scholar

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Bi₂O₂Se photoconductive detector with low power consumption and high sensitivity

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Corresponding author: Li Geng-Wei, ligw@cugb.edu.cn ; Xing Jie, xingjie@cugb.edu.cn

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Bi2O2Se photoconductive detector with low power consumption and high sensitivity

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Corresponding author: Li Geng-Wei, ligw@cugb.edu.cn ; Xing Jie, xingjie@cugb.edu.cn

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Bi₂O₂Se photoconductive detector with low power consumption and high sensitivity