Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETsJ. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103
| Citation: |
Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETsJ. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103
|
Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETsJ. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103
| Citation: |
Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETsJ. Acta Physica Sinica, 2011, 60(11): 116103. DOI: 10.7498/aps.60.116103
|
DownLoad: