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研究了180 nm 互补金属氧化物半导体技术下的器件沟道长度对总剂量辐照效应的影响. 在其他条件如辐照偏置、器件结构等不变的情况下, 氧化层中的陷阱电荷决定了辐照响应. 浅沟槽隔离氧化层中的陷阱电荷使得寄生的侧壁沟道反型, 从而形成大的关态泄漏电流. 这个电流与沟道长度存在一定的关系, 沟道长度越短, 泄漏电流越大. 首次发现辐照会增强这个电流的沟道长度调制效应, 从而使得器件进一步退化.
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关键词:
- 总剂量效应 /
- 浅沟槽隔离 /
- 氧化层陷阱正电荷 /
- 金属氧化物半导体场效晶体管
The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is determined by the charges trapped in the oxide. The off-state leakage due to the charges trapped in the shallow trench isolation oxide inverting the parasitic sidewall channel has correlation with the channel length. A shorter channel leads to a larger leakage current. For the first time, we report that the leakage current also exhibits the radiation enhanced channel-length modulation effect, which further degrades the device performance.-
Keywords:
- total ionizing dose /
- shallow trench isolation /
- oxide trapped charge /
- metal-oxide-semiconductor field effect transistor
[1] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, DoddP E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 551833
[2] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P,Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐, 王剑屏, 黄智, 徐娜军, 何宝平,彭宏论, 姚育娟 2001 50 2434]
[3] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, ZhangX 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华,杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 58 4090]
[4] Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. Nucl. Sci.52 2259
[5] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L,McLain M, Schrimpf R D 2008 Microelectronics Reliability 481000
[6] Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin.J. Semiconduct. 28 241 (in Chinese) [孟志琴,郝跃, 唐瑜, 马晓华, 朱志炜, 李永坤 2007 半导体学报 28 241]
[7] Wang S H, Lu Q,WangWH, An X, Huang R 2010 Acta Phys. Sin.59 1970 (in Chinese) [王思浩,鲁庆, 王文华, 安霞, 黄如 2010 59 1970]
[8] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V,Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instrum. MethodsPhys. Res. A 582 750
[9] McLain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H,Amort A, Baze M, Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
[10] Chen X B, Zhang Q Z 2008 Transistor Principle and Design (Vol.2) (Beijing: Publishing House of Electronics Industry) p297 (inChinese) [陈星弻, 张庆忠 2008晶体管原理与设计(第2版)(电子工业出版社) 第297页]
[11] Youk G U, Khare P S, Schrimpf R D, Massengill L W, GallowayK F 1999 IEEE Trans. Nucl. Sci. 46 1830
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[1] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, DoddP E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 551833
[2] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P,Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐, 王剑屏, 黄智, 徐娜军, 何宝平,彭宏论, 姚育娟 2001 50 2434]
[3] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, ZhangX 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华,杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 58 4090]
[4] Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. Nucl. Sci.52 2259
[5] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L,McLain M, Schrimpf R D 2008 Microelectronics Reliability 481000
[6] Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin.J. Semiconduct. 28 241 (in Chinese) [孟志琴,郝跃, 唐瑜, 马晓华, 朱志炜, 李永坤 2007 半导体学报 28 241]
[7] Wang S H, Lu Q,WangWH, An X, Huang R 2010 Acta Phys. Sin.59 1970 (in Chinese) [王思浩,鲁庆, 王文华, 安霞, 黄如 2010 59 1970]
[8] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V,Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instrum. MethodsPhys. Res. A 582 750
[9] McLain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H,Amort A, Baze M, Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
[10] Chen X B, Zhang Q Z 2008 Transistor Principle and Design (Vol.2) (Beijing: Publishing House of Electronics Industry) p297 (inChinese) [陈星弻, 张庆忠 2008晶体管原理与设计(第2版)(电子工业出版社) 第297页]
[11] Youk G U, Khare P S, Schrimpf R D, Massengill L W, GallowayK F 1999 IEEE Trans. Nucl. Sci. 46 1830
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