[1] |
Liu Dong-Jing, Zhou Fu, Chen Shuai-Yang, Hu Zhi-Liang. Molecular dynamics of heat transport properties at gallium nitride/graphene/silicon carbide heterointerface. Acta Physica Sinica,
2023, 72(15): 157901.
doi: 10.7498/aps.72.20230537
|
[2] |
Zhou Ji-Yang, Li Qiang, Xu Jin-Shi, Li Chuan-Feng, Guo Guang-Can. Theoretical calculation of fiber cavity coupling silicon carbide membrance. Acta Physica Sinica,
2022, 71(6): 060303.
doi: 10.7498/aps.71.20211797
|
[3] |
Liu Dong-Jing, Wang Shao-Ming, Yang Ping. Thermal property of graphene/silicon carbide heterostructure by molecular dynamics simulation. Acta Physica Sinica,
2021, 70(18): 187302.
doi: 10.7498/aps.70.20210613
|
[4] |
Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin. Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2014, 63(23): 236102.
doi: 10.7498/aps.63.236102
|
[5] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica,
2013, 62(7): 077103.
doi: 10.7498/aps.62.077103
|
[6] |
Qiang Lei, Yao Ruo-He. Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica,
2012, 61(8): 087303.
doi: 10.7498/aps.61.087303
|
[7] |
Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin. Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica,
2011, 60(7): 077106.
doi: 10.7498/aps.60.077106
|
[8] |
Dong Gang, Liu Jia, Xue Meng, Yang Yin-Tang. Performance optimization of global interconnect basedon dual supply and dual threshold voltages. Acta Physica Sinica,
2011, 60(4): 046602.
doi: 10.7498/aps.60.046602
|
[9] |
Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong. Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica,
2011, 60(5): 058502.
doi: 10.7498/aps.60.058502
|
[10] |
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2010, 59(11): 8131-8136.
doi: 10.7498/aps.59.8131
|
[11] |
Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun. Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica,
2009, 58(7): 4948-4952.
doi: 10.7498/aps.58.4948
|
[12] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2009, 58(1): 494-497.
doi: 10.7498/aps.58.494
|
[13] |
Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
doi: 10.7498/aps.56.3504
|
[14] |
Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng. 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica,
2006, 55(7): 3670-3676.
doi: 10.7498/aps.55.3670
|
[15] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica,
2005, 54(2): 897-901.
doi: 10.7498/aps.54.897
|
[16] |
Li Yi-De, Du Ying-Lei, Lee Ki-Huan, Wu Bai-Mei. Photoacoustic determination of the energy band characterics for porous silicon carbides. Acta Physica Sinica,
2003, 52(5): 1260-1263.
doi: 10.7498/aps.52.1260
|
[17] |
FENG XI-QI, LUO BIN-ZHANG. THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION. Acta Physica Sinica,
1980, 29(1): 1-10.
doi: 10.7498/aps.29.1
|
[18] |
. . Acta Physica Sinica,
1966, 22(7): 831-835.
doi: 10.7498/aps.22.831
|
[19] |
KUO CHANG-LIN. THE POLYTYPISM OF SILICON CARBIDE. Acta Physica Sinica,
1965, 21(6): 1089-1104.
doi: 10.7498/aps.21.1089
|
[20] |
. . Acta Physica Sinica,
1964, 20(3): 287-288.
doi: 10.7498/aps.20.287
|