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本文采用渐变沟道近似和准二维分析的方法, 通过求解泊松方程, 建立了应变Si NMOSFET阈值电压集约物理模型. 模型同时研究了短沟道, 窄沟道, 非均匀掺杂, 漏致势垒降低等物理效应对阈值电压的影响. 采用参数提取软件提取了阈值电压相关参数, 通过将模型的计算结果和实验结果进行对比分析, 验证了本文提出的模型的正确性. 该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考.
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关键词:
- 应变Si NMOSFET /
- 阈值电压 /
- 集约物理模型
The development of strained-Si physical compact threshold voltage model is based on Poisson's equation, using the gradual channel approximation (GCA) and coherent quasi-two-dimensional (2D) analysis, as well as taking into account the effects of short channel effect (SCE), narrow channel effect (NCE), non-uniform doping effect, and drain-induced barrier lowering (DIBL) effect. Moreover, the threshold voltage parameters are extracted from the experimental results by software. Finally, the validity of our model is derived from the comparison of our simulation results. The proposed model may be useful for the design and simulation of very large scale integrated circuits (VLSI) made of strained-Si.-
Keywords:
- strained Si NMOSFET /
- threshold voltage /
- physical compact modeling
[1] O'Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Qu J T, Zhang H M, Qing S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [曲江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇 2011 60 098501]
[4] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 58 4948]
[5] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese) [王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 60 077106]
[6] Karthik C, Zhou X, Chiah S B 2004 NSTI-Nanotech 2 179
[7] Hasen M N, Judy L, Dimitri A A 2004 IEEE Trans. Electron Devices 51 2069
[8] Kunihiro S 2000 IEEE Trans. Electron Devices 47 2372
[9] Kendall J D, Boothroyd A R 1986 IEEE Electron Devices Lett. 7 407
[10] Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12-68
[11] Xu S L, Xie M X, Zhang Z F 2007 SiGe Microelectronics Technology (Beijing: National Defense Industry Press) p8 (in Chinese) [徐世六, 谢孟贤, 张正璠 2007 SiGe微电子技术 (北京: 国防工业出版社) 第8页]
[12] Ting K K 2012 IEEE Electron Devices Lett. 33 770
[13] Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Edn.) (New York: Oxford University Press) p600-638
[14] Deen M J 1990 IEEE Trans. Electron Devices 37 1707
[15] Tsunomura T 2009 IEEE Trans. Electron Devices 56 2073
[16] Arora N D 1987 Solid-State Electronics 30 560
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[1] O'Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Qu J T, Zhang H M, Qing S S, Xu X B, Wang X Y, Hu H Y 2011 Acta Phys. Sin. 60 098501 (in Chinese) [曲江涛, 张鹤鸣, 秦珊珊, 徐小波, 王晓艳, 胡辉勇 2011 60 098501]
[4] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志峰, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 58 4948]
[5] Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese) [王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 60 077106]
[6] Karthik C, Zhou X, Chiah S B 2004 NSTI-Nanotech 2 179
[7] Hasen M N, Judy L, Dimitri A A 2004 IEEE Trans. Electron Devices 51 2069
[8] Kunihiro S 2000 IEEE Trans. Electron Devices 47 2372
[9] Kendall J D, Boothroyd A R 1986 IEEE Electron Devices Lett. 7 407
[10] Arora N 2007 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific Press) p12-68
[11] Xu S L, Xie M X, Zhang Z F 2007 SiGe Microelectronics Technology (Beijing: National Defense Industry Press) p8 (in Chinese) [徐世六, 谢孟贤, 张正璠 2007 SiGe微电子技术 (北京: 国防工业出版社) 第8页]
[12] Ting K K 2012 IEEE Electron Devices Lett. 33 770
[13] Yannis T, Colin M 2011 Operation and Modeling of the MOS Transistor (3rd Edn.) (New York: Oxford University Press) p600-638
[14] Deen M J 1990 IEEE Trans. Electron Devices 37 1707
[15] Tsunomura T 2009 IEEE Trans. Electron Devices 56 2073
[16] Arora N D 1987 Solid-State Electronics 30 560
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