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A 0.18 m MOSFET with shallow trench isolation is exposed to a -ray radiation. The parameters such as off-state leakage current, threshold voltage, transconductance, gate leakage current, and subthreshold slope are analyzed for pre- and post-irradiation. By introducing constant sheet charges at the shallow trench isolation oxide sidewall, good agreement between 3D simulation and experiment result is demonstrated. We believe that the thin gate oxide is insensitive to radiation, and the radiation induced charge trapping in the shallow trench isolation still leads to macroscopic effects such as drain-to-source leakage current, ultimately limiting the tolerance of CMOS circuits.
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Keywords:
- total ionizing dose /
- shallow trench isolation /
- oxide trapped charge /
- MOSFET
[1] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. on Nucl. Sci. 55 1833
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[4] [5] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese)[陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 58 4090]
[6] [7] Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. on Nuc. Sci. 52 2259
[8] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M, Schrimpf R D 2008 Microelect. Reliab. 48 1000
[9] [10] [11] Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin. J. Semicond. 28 241 (in Chinese)[孟志琴、郝 跃、唐 瑜、马晓华、朱志炜、李永坤 2007 半导体学报 28 241]
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[14] Benedetto J M, Boesch H E, McLean F B, Mize J P 1985 IEEE Trans. on Nucl. Sci. 32 3916
[15] [16] Barnaby H J 2006 IEEE Trans. on Nucl. Sci. 53 3103
[17] [18] [19] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instr. and Meth. in Phys. Res. A 582 750
[20] Yo G U, Khare P S, Schrimpf R D, Massengill L W, Galloway K F 1999 IEEE Trans. on Nucl. Sci. 46 1830
[21] [22] Turowski M, Raman A, Schrimpf R D 2004 IEEE Trans. on Nucl. Sci. 51 3166
[23] -
[1] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. on Nucl. Sci. 55 1833
[2] [3] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 3434 (in Chinese)[张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001 50 2434]
[4] [5] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese)[陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 58 4090]
[6] [7] Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. on Nuc. Sci. 52 2259
[8] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M, Schrimpf R D 2008 Microelect. Reliab. 48 1000
[9] [10] [11] Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin. J. Semicond. 28 241 (in Chinese)[孟志琴、郝 跃、唐 瑜、马晓华、朱志炜、李永坤 2007 半导体学报 28 241]
[12] [13] Wang S H, Lu Q, Wang W H, An X, Huang R 2010 Acta Phys. Sin. 59 1970(in Chinese)[王思浩、鲁 庆、王文华、安 霞、黄 如 2010 59 1970]
[14] Benedetto J M, Boesch H E, McLean F B, Mize J P 1985 IEEE Trans. on Nucl. Sci. 32 3916
[15] [16] Barnaby H J 2006 IEEE Trans. on Nucl. Sci. 53 3103
[17] [18] [19] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instr. and Meth. in Phys. Res. A 582 750
[20] Yo G U, Khare P S, Schrimpf R D, Massengill L W, Galloway K F 1999 IEEE Trans. on Nucl. Sci. 46 1830
[21] [22] Turowski M, Raman A, Schrimpf R D 2004 IEEE Trans. on Nucl. Sci. 51 3166
[23]
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