Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng. Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structureJ. Acta Physica Sinica, 2013, 62(19): 197203. DOI: 10.7498/aps.62.197203