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The variations in ID-VD characteristic of 0.8 μm SOINMOS transistors are studied, which are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. The results show that the linear kink effects of these samples at each dose level ane not presente due to the optimizations of manufacture process and layout design. The drain voltage that corresponds to the impact ionization induced kink effect, increases, with dose level. An anomalous "Kink" effect in the back gate ID-VSUB characteristics of the partially depleted SOINMOS transistors is observed at a high dose level, which is attributed to interface trap states generated at the buried oxide/silicon film interface during irradiation.
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Keywords:
- total dose effect /
- kink /
- impact ionization /
- back-gate anomalous transconductance
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[6] Mercha A, Rafi J M, Simoen E, Augendre E, Claevs C 2003 IEEE Trans. Electron Dev. 50 1675
[7] Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 575
[8] Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 25 214
[9] Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 708
[10] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 60 116013]
[11] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 61 050702]
[12] Huang R, Zhang G Y, Li Y X, Zhang X 2005 Technology and Application of SOI CMOS (Vol. 1) (Beijing: Science Press) p136 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS技术及其应用(北京: 科学出版社) 第136页]
[13] Ushiki T, Kotani K, Funaki T, Kawai K, Ohmi T 200 IEEE Trans. Electron Dev. 47 360
[14] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Vol. 4) (Beijing: National Defense Industry Press) p216 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2003 半导体物理学(北京:国防工业出版社) 第216页]
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[1] Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V IEEE Trans. Nucl. Sci. 55 1833
[3] Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[4] Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
[5] Cester A, Gerardin S, Paccagnella A, Schwank J R, Vizkelethy G, Candelori A, Ghidini G 2004 IEEE Trans. Nucl. Sci. 51 3150
[6] Mercha A, Rafi J M, Simoen E, Augendre E, Claevs C 2003 IEEE Trans. Electron Dev. 50 1675
[7] Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 575
[8] Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 25 214
[9] Chen S S, Lu S H, Tang T H 2004 IEEE Trans. Electron Dev. 51 708
[10] Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 60 116013]
[11] Hu Z Y, Liu Z L, Shao H, Zhang Z X, Ning B X, Bi D W, Chen M, Zou S C 2012 Acta Phys. Sin. 61 050702 (in Chinese) [胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 毕大炜, 陈明, 邹世昌 2012 61 050702]
[12] Huang R, Zhang G Y, Li Y X, Zhang X 2005 Technology and Application of SOI CMOS (Vol. 1) (Beijing: Science Press) p136 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS技术及其应用(北京: 科学出版社) 第136页]
[13] Ushiki T, Kotani K, Funaki T, Kawai K, Ohmi T 200 IEEE Trans. Electron Dev. 47 360
[14] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Vol. 4) (Beijing: National Defense Industry Press) p216 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2003 半导体物理学(北京:国防工业出版社) 第216页]
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