The passivation of Al2O3 and its applications in the crystalline silicon solar cell

Zhang Xiang; Liu Bang-Wu; Xia Yang; Li Chao-Bo; Liu Jie; Shen Ze-Nan

doi:10.7498/aps.61.187303

Abstract

The material characteristics and one of the preparation methods, atomic layer deposition of Al2O3 are introduced. The passivation mechanisms (chemical passivation and field-effect passivation) of Al2O3 films are demonstrated comprehensively, and optimization methods from the angles of film thickness, thermal stability and stack passivation are illuminated. The application of Al2O3 passivation in the crystalline silicon solar cell is provided, including passivated emitter rear locally diffused cell and passivated emitter and rear cell. Finally, the future study of the Al2O3 passivation process and the application to industry production are proposed.

Keywords:

Authors and contacts

1.
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61106060).

References

[1]	Aberle A G 2000 Progress in Photovoltaics: Research and Applications 8 473
[2]	Dauwe S, Schmidt J, Hezel R 2002 Photovoltaic Specialists Conference New Orleans, Louisiana, May 21-24, 2002 p1246
[3]	Schmidt J, Merkle A, Brendel R, Hoex B, van de Sanden M C M, Kessels W M M 2008 Progress in Photovoltaics: Research and Applications 16 461
[4]	Hodson C, Kessels E 2009 Photovoltaics World 9 17
[5]	Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 2112
[6]	Wu L H, Zhang X Z, Yu Y, Wan C H, Tan X Y 2011 Acta Phys. Sin. 60 7807 (in Chinese) [吴利华, 章晓中, 于奕, 万蔡华, 谭新玉 2011 60 7807]
[7]	Benick J, Hoex B, van de Sanden M C M, Kessels W M M, Schultz O 2008 Appl. Phys. Lett. 92 3504
[8]	Schmidt J, Werner F, Veith B, Zielke D, Bock R, Tiba V, Poodt P, Roozeboom F, Andrew Li, Cuevas A, Brendel R 2010 25th European Photovoltaic Solar Energy Conference Valencia, Spain, September 6-10, 2010 p1130
[9]	Lu H L, Xu M, Ding S J, Ren J, Zhang W 2006 Journal of Inorganic Materials 21 1217 (in Chinese) [卢红亮, 徐敏, 丁士进, 任杰, 张卫 2006 无机材料学报 21 1217]
[10]	Bakke J R, Pickrahn K L, Brennan T P, Bent S F 2011 Nanoscale 3 3482
[11]	Schmidt J, Merkle A, Hoex B, van de Sanden M C M, Kessels W M M, Brendel R 2008 Photovoltaic Specialists Conference, 33rd IEEE San Diego, California USA, May 11-16, 2008 p1
[12]	George S M 2010 Chem. Rev. 110 111
[13]	Langereis E, Keijmel J, van de Sanden M C M, Kessels W M M 2008 Appl. Phys. Lett. 92 1904
[14]	Profijt H B, Potts S E, van de Sanden M C M, Kessels W M M 2011 J. Vac. Sci. Technol. A 29 801
[15]	Suntola T, Antson J (U.S. Patent) 4058430 [1977-11-15]
[16]	Werner F, Stals W, Görtzen R, Veith B, Brendel R, Schmidt J 2011 Energy Procedia 8 301
[17]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A D 2010 Advanced Materials 22 3564
[18]	Hoex B, Gielis J J H, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3703
[19]	Saint-Cast P, Youn-Ho Heo, Billot E, Olwal P, Hofmann M, Rentsch J, Glunz S W, Preu R 2011 Energy Procedia 8 642
[20]	Renault O, Gosset L G, Rouchon D, Ermolieff A 2002 J. Vac. Sci. Technol. A 20 1867
[21]	Benick J, Richter A, Li T T, Grant N E, Mclntosh K R, Ren Y, Weber K J, Hermle M, Glunz S W 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p891
[22]	Lucovsky G, Wu Y, Niimi H, Misra V, Phillips J C 1999 Appl. Phys. Lett. 74 2005
[23]	Gielis J J H, Hoex B, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3701
[24]	Kimoto K, Matsui Y, Nabatame T, Yasuda T, Mizoguchi T 2003 Appl. Phys. Lett. 83 4306
[25]	Matsunaga K 2003 Phys. Rev. B 68 5110
[26]	Peacock P W, Robertson J 2003 Appl. Phys. Lett. 83 2025
[27]	Johnson R S, Lucovsky G, Baumvol I 2001 J. Vac. Sci. Technol. A 19 1353
[28]	Schmidt J, Veith B, Werner F, Zielke D, Brendel R 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p885
[29]	Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Physica Status Solidi (RRL) 4 10
[30]	Werner F, Veith B, Zielke D, Kühnemund L, Tegenkamp C 2011 J. Appl. Phys. 109 3701
[31]	Richter A, Benick J, Hermle M, Glunz S W 2011 Physica Status Solidi (RRL) 5 202
[32]	Richter A, Benick J, Kalio A, Seiffe J, Hörteis M, Hermle M, Glunz S W 2011 Energy Procedia 8 479
[33]	Veith B, Werner F, Zielke D, Brendel Rolf, Schmidt J 2011 Energy Procedia 8 307
[34]	Dingemans G, Engelhart P, Seguin R, Einsele F, Hoex B, van de Sanden M C M, Kessels W M M 2009 J. Appl. Phys. 106 4907
[35]	Repo P, Talvitie H, Li S, Skarp J, Savin H 2011 Energy Procedia 8 681
[36]	Xia Y, Liu B W, Liu J, Shen Z N, Li C B 2011 Solar Energy 85 1574
[37]	Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2010 59 5777]
[38]	Zhou C L, Li X D, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2011 Acta Phys. Sin. 60 038201 (in Chinese) [周春兰, 励旭东, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2011 60 038201]
[39]	Shen Z N, Liu B W, Xia Y, Liu J, Li C B, Chen B 2011 Research and Progress of SSE 31 387 (in Chinese) [沈泽南, 刘邦武, 夏洋, 刘杰, 李超波, 陈波 2011 固体电子学研究与进展 31 387]
[40]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[41]	Lüder T, Hahn G, Terheiden B 2011 Energy Procedia 8 660

Cited By

[1]	Aberle A G 2000 Progress in Photovoltaics: Research and Applications 8 473
[2]	Dauwe S, Schmidt J, Hezel R 2002 Photovoltaic Specialists Conference New Orleans, Louisiana, May 21-24, 2002 p1246
[3]	Schmidt J, Merkle A, Brendel R, Hoex B, van de Sanden M C M, Kessels W M M 2008 Progress in Photovoltaics: Research and Applications 16 461
[4]	Hodson C, Kessels E 2009 Photovoltaics World 9 17
[5]	Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 2112
[6]	Wu L H, Zhang X Z, Yu Y, Wan C H, Tan X Y 2011 Acta Phys. Sin. 60 7807 (in Chinese) [吴利华, 章晓中, 于奕, 万蔡华, 谭新玉 2011 60 7807]
[7]	Benick J, Hoex B, van de Sanden M C M, Kessels W M M, Schultz O 2008 Appl. Phys. Lett. 92 3504
[8]	Schmidt J, Werner F, Veith B, Zielke D, Bock R, Tiba V, Poodt P, Roozeboom F, Andrew Li, Cuevas A, Brendel R 2010 25th European Photovoltaic Solar Energy Conference Valencia, Spain, September 6-10, 2010 p1130
[9]	Lu H L, Xu M, Ding S J, Ren J, Zhang W 2006 Journal of Inorganic Materials 21 1217 (in Chinese) [卢红亮, 徐敏, 丁士进, 任杰, 张卫 2006 无机材料学报 21 1217]
[10]	Bakke J R, Pickrahn K L, Brennan T P, Bent S F 2011 Nanoscale 3 3482
[11]	Schmidt J, Merkle A, Hoex B, van de Sanden M C M, Kessels W M M, Brendel R 2008 Photovoltaic Specialists Conference, 33rd IEEE San Diego, California USA, May 11-16, 2008 p1
[12]	George S M 2010 Chem. Rev. 110 111
[13]	Langereis E, Keijmel J, van de Sanden M C M, Kessels W M M 2008 Appl. Phys. Lett. 92 1904
[14]	Profijt H B, Potts S E, van de Sanden M C M, Kessels W M M 2011 J. Vac. Sci. Technol. A 29 801
[15]	Suntola T, Antson J (U.S. Patent) 4058430 [1977-11-15]
[16]	Werner F, Stals W, Görtzen R, Veith B, Brendel R, Schmidt J 2011 Energy Procedia 8 301
[17]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A D 2010 Advanced Materials 22 3564
[18]	Hoex B, Gielis J J H, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3703
[19]	Saint-Cast P, Youn-Ho Heo, Billot E, Olwal P, Hofmann M, Rentsch J, Glunz S W, Preu R 2011 Energy Procedia 8 642
[20]	Renault O, Gosset L G, Rouchon D, Ermolieff A 2002 J. Vac. Sci. Technol. A 20 1867
[21]	Benick J, Richter A, Li T T, Grant N E, Mclntosh K R, Ren Y, Weber K J, Hermle M, Glunz S W 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p891
[22]	Lucovsky G, Wu Y, Niimi H, Misra V, Phillips J C 1999 Appl. Phys. Lett. 74 2005
[23]	Gielis J J H, Hoex B, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3701
[24]	Kimoto K, Matsui Y, Nabatame T, Yasuda T, Mizoguchi T 2003 Appl. Phys. Lett. 83 4306
[25]	Matsunaga K 2003 Phys. Rev. B 68 5110
[26]	Peacock P W, Robertson J 2003 Appl. Phys. Lett. 83 2025
[27]	Johnson R S, Lucovsky G, Baumvol I 2001 J. Vac. Sci. Technol. A 19 1353
[28]	Schmidt J, Veith B, Werner F, Zielke D, Brendel R 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p885
[29]	Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Physica Status Solidi (RRL) 4 10
[30]	Werner F, Veith B, Zielke D, Kühnemund L, Tegenkamp C 2011 J. Appl. Phys. 109 3701
[31]	Richter A, Benick J, Hermle M, Glunz S W 2011 Physica Status Solidi (RRL) 5 202
[32]	Richter A, Benick J, Kalio A, Seiffe J, Hörteis M, Hermle M, Glunz S W 2011 Energy Procedia 8 479
[33]	Veith B, Werner F, Zielke D, Brendel Rolf, Schmidt J 2011 Energy Procedia 8 307
[34]	Dingemans G, Engelhart P, Seguin R, Einsele F, Hoex B, van de Sanden M C M, Kessels W M M 2009 J. Appl. Phys. 106 4907
[35]	Repo P, Talvitie H, Li S, Skarp J, Savin H 2011 Energy Procedia 8 681
[36]	Xia Y, Liu B W, Liu J, Shen Z N, Li C B 2011 Solar Energy 85 1574
[37]	Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2010 59 5777]
[38]	Zhou C L, Li X D, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2011 Acta Phys. Sin. 60 038201 (in Chinese) [周春兰, 励旭东, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2011 60 038201]
[39]	Shen Z N, Liu B W, Xia Y, Liu J, Li C B, Chen B 2011 Research and Progress of SSE 31 387 (in Chinese) [沈泽南, 刘邦武, 夏洋, 刘杰, 李超波, 陈波 2011 固体电子学研究与进展 31 387]
[40]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[41]	Lüder T, Hahn G, Terheiden B 2011 Energy Procedia 8 660

[1]	Qiu Peng, Liu Heng, Zhu Xiao-Li, Tian Feng, Du Meng-Chao, Qiu Hong-Yu, Chen Guan-Liang, Hu Yu-Yu, Kong De-Lin, Yang Jin, Wei Hui-Yun, Peng Ming-Zeng, Zheng Xin-He. Atomic layer deposition and application of group III nitrides semiconductor and their alloys. Acta Physica Sinica, 2024, 73(3): 038102. doi: 10.7498/aps.73.20230832
[2]	Qu Zi-Han, Zhao Yang, Ma Fei, You Jing-Bi. Preparation of high-performance large-area perovskite solar cells by atomic layer deposition of metal oxide buffer layer. Acta Physica Sinica, 2024, 73(9): 098802. doi: 10.7498/aps.73.20240218
[3]	Li Zhong-Xiang, Wang Shu-Ya, Huang Zi-Qiang, Wang Chen, Mu Qing. Preparation of Al₂O₃ tunnel barrier layer in atome-level controlled Josephson junction. Acta Physica Sinica, 2022, 71(21): 218102. doi: 10.7498/aps.71.20220820
[4]	Guo Qin-Min, Qin Zhi-Hui. Development and application of vapor deposition technology in atomic manufacturing. Acta Physica Sinica, 2021, 70(2): 028101. doi: 10.7498/aps.70.20201436
[5]	Zhu Jing-Yan, Zou Shuai, Sun Hua, Su Xiao-Dong. Analyses of heat dissipation of direct-cooling backsheets of crystalline silicon photovoltaic modules at ambient temperatures. Acta Physica Sinica, 2021, 70(9): 098802. doi: 10.7498/aps.70.20201741
[6]	Li Ye, Wang Xi-Xi, Wei Hui-Yun, Qiu Peng, He Ying-Feng, Song Yi-Meng, Duan Zhang, Shen Cheng-Tao, Peng Ming-Zeng, Zheng Xin-He. Enhancement of interface transportation for quantum dot solar cells using ultrathin InN by atomic layer deposition. Acta Physica Sinica, 2021, 70(18): 187702. doi: 10.7498/aps.70.20210554
[7]	Lin Ming-Yue, Ju Bo, Li Yan, Chen Xue-Lian. Performance of 2-bromoterephthalic acid passivated all-inorganic perovskite cells. Acta Physica Sinica, 2021, 70(12): 128803. doi: 10.7498/aps.70.20202005
[8]	Liu Zi, Zhang Heng, Wu Hao, Liu Chang. Enhancement of photoluminescence from zinc oxide by aluminum nanoparticle surface plasmon. Acta Physica Sinica, 2019, 68(10): 107301. doi: 10.7498/aps.68.20190062
[9]	Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei. Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501. doi: 10.7498/aps.67.20172215
[10]	Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo. First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica, 2018, 67(16): 166401. doi: 10.7498/aps.67.20180626
[11]	Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801. doi: 10.7498/aps.64.198801
[12]	Li Yong, Li Hui-Qi, Xia Yang, Liu Bang-Wu. Study on atomic layer deposition preparation of core-shell structured nanometer materials. Acta Physica Sinica, 2013, 62(19): 198102. doi: 10.7498/aps.62.198102
[13]	Dong Ya-Bin, Xia Yang, Li Chao-Bo, Lu Wei-Er, Rao Zhi-Peng, Zhang Yang, Zhang Xiang, Ye Tian-Chun. Investigation on the relationship between the properties of atomic layer deposition ZnO film and the dose of precursor. Acta Physica Sinica, 2013, 62(14): 147306. doi: 10.7498/aps.62.147306
[14]	Jia He-Shun, Luo Lei, Li Bing-Lin, Xu Zhen-Hua, Ren Xian-Kun, Jiang Yan-Sen, Cheng Liang, Zhang Chun-Yan. Performance of polycrystal silicon color solar cells. Acta Physica Sinica, 2013, 62(16): 168802. doi: 10.7498/aps.62.168802
[15]	Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng. Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structure. Acta Physica Sinica, 2013, 62(19): 197203. doi: 10.7498/aps.62.197203
[16]	Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang. Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica, 2013, 62(19): 197301. doi: 10.7498/aps.62.197301
[17]	Zheng Xue, Yu Xue-Gong, Yang De-Ren. Passivation property of -Si：H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica, 2013, 62(19): 198801. doi: 10.7498/aps.62.198801
[18]	Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou. Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica, 2009, 58(10): 7211-7215. doi: 10.7498/aps.58.7211
[19]	Liu Gui-Li. Electronic theoretical study on the corrosion and passivation mechanism of Ti metal. Acta Physica Sinica, 2008, 57(7): 4441-4445. doi: 10.7498/aps.57.4441
[20]	Zhang Guo-Ying, Zhang Hui, Liu Yan-Xia, Yang Li-Na. The electronic theory study of the influence of Pd on the passivation of Ti alloys. Acta Physica Sinica, 2008, 57(4): 2404-2408. doi: 10.7498/aps.57.2404

Catalog

Vol. 61, Issue 18 - 2012-09-20

Metrics

Abstract views: 15783
PDF Downloads: 3057
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板