Al2O3钝化及其在晶硅太阳电池中的应用

张祥; 刘邦武; 夏洋; 李超波; 刘杰; 沈泽南

doi:10.7498/aps.61.187303

摘要

介绍了Al2O3的材料性质及其原子层沉积制备方法, 详细阐述了该材料的钝化机制(化学钝化和场效应钝化), 并从薄膜厚度、热稳定性及叠层钝化等角度阐释其优化方案. 概述了Al2O3钝化在晶体硅太阳电池中的应用, 主要包括钝化发射极及背面局部扩散电池和钝化发射极及背表面电池. 最后, 对Al2O3钝化工艺的未来研究方向和大规模的工业应用进行了展望.

关键词:

The material characteristics and one of the preparation methods, atomic layer deposition of Al2O3 are introduced. The passivation mechanisms (chemical passivation and field-effect passivation) of Al2O3 films are demonstrated comprehensively, and optimization methods from the angles of film thickness, thermal stability and stack passivation are illuminated. The application of Al2O3 passivation in the crystalline silicon solar cell is provided, including passivated emitter rear locally diffused cell and passivated emitter and rear cell. Finally, the future study of the Al2O3 passivation process and the application to industry production are proposed.

Keywords:

作者及机构信息

1.
中国科学院微电子器件与集成技术重点实验室, 北京 100029

基金项目: 国家自然科学基金(批准号: 61106060)资助的课题.

Authors and contacts

1.
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61106060).

参考文献

[1]	Aberle A G 2000 Progress in Photovoltaics: Research and Applications 8 473
[2]	Dauwe S, Schmidt J, Hezel R 2002 Photovoltaic Specialists Conference New Orleans, Louisiana, May 21-24, 2002 p1246
[3]	Schmidt J, Merkle A, Brendel R, Hoex B, van de Sanden M C M, Kessels W M M 2008 Progress in Photovoltaics: Research and Applications 16 461
[4]	Hodson C, Kessels E 2009 Photovoltaics World 9 17
[5]	Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 2112
[6]	Wu L H, Zhang X Z, Yu Y, Wan C H, Tan X Y 2011 Acta Phys. Sin. 60 7807 (in Chinese) [吴利华, 章晓中, 于奕, 万蔡华, 谭新玉 2011 60 7807]
[7]	Benick J, Hoex B, van de Sanden M C M, Kessels W M M, Schultz O 2008 Appl. Phys. Lett. 92 3504
[8]	Schmidt J, Werner F, Veith B, Zielke D, Bock R, Tiba V, Poodt P, Roozeboom F, Andrew Li, Cuevas A, Brendel R 2010 25th European Photovoltaic Solar Energy Conference Valencia, Spain, September 6-10, 2010 p1130
[9]	Lu H L, Xu M, Ding S J, Ren J, Zhang W 2006 Journal of Inorganic Materials 21 1217 (in Chinese) [卢红亮, 徐敏, 丁士进, 任杰, 张卫 2006 无机材料学报 21 1217]
[10]	Bakke J R, Pickrahn K L, Brennan T P, Bent S F 2011 Nanoscale 3 3482
[11]	Schmidt J, Merkle A, Hoex B, van de Sanden M C M, Kessels W M M, Brendel R 2008 Photovoltaic Specialists Conference, 33rd IEEE San Diego, California USA, May 11-16, 2008 p1
[12]	George S M 2010 Chem. Rev. 110 111
[13]	Langereis E, Keijmel J, van de Sanden M C M, Kessels W M M 2008 Appl. Phys. Lett. 92 1904
[14]	Profijt H B, Potts S E, van de Sanden M C M, Kessels W M M 2011 J. Vac. Sci. Technol. A 29 801
[15]	Suntola T, Antson J (U.S. Patent) 4058430 [1977-11-15]
[16]	Werner F, Stals W, Görtzen R, Veith B, Brendel R, Schmidt J 2011 Energy Procedia 8 301
[17]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A D 2010 Advanced Materials 22 3564
[18]	Hoex B, Gielis J J H, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3703
[19]	Saint-Cast P, Youn-Ho Heo, Billot E, Olwal P, Hofmann M, Rentsch J, Glunz S W, Preu R 2011 Energy Procedia 8 642
[20]	Renault O, Gosset L G, Rouchon D, Ermolieff A 2002 J. Vac. Sci. Technol. A 20 1867
[21]	Benick J, Richter A, Li T T, Grant N E, Mclntosh K R, Ren Y, Weber K J, Hermle M, Glunz S W 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p891
[22]	Lucovsky G, Wu Y, Niimi H, Misra V, Phillips J C 1999 Appl. Phys. Lett. 74 2005
[23]	Gielis J J H, Hoex B, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3701
[24]	Kimoto K, Matsui Y, Nabatame T, Yasuda T, Mizoguchi T 2003 Appl. Phys. Lett. 83 4306
[25]	Matsunaga K 2003 Phys. Rev. B 68 5110
[26]	Peacock P W, Robertson J 2003 Appl. Phys. Lett. 83 2025
[27]	Johnson R S, Lucovsky G, Baumvol I 2001 J. Vac. Sci. Technol. A 19 1353
[28]	Schmidt J, Veith B, Werner F, Zielke D, Brendel R 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p885
[29]	Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Physica Status Solidi (RRL) 4 10
[30]	Werner F, Veith B, Zielke D, Kühnemund L, Tegenkamp C 2011 J. Appl. Phys. 109 3701
[31]	Richter A, Benick J, Hermle M, Glunz S W 2011 Physica Status Solidi (RRL) 5 202
[32]	Richter A, Benick J, Kalio A, Seiffe J, Hörteis M, Hermle M, Glunz S W 2011 Energy Procedia 8 479
[33]	Veith B, Werner F, Zielke D, Brendel Rolf, Schmidt J 2011 Energy Procedia 8 307
[34]	Dingemans G, Engelhart P, Seguin R, Einsele F, Hoex B, van de Sanden M C M, Kessels W M M 2009 J. Appl. Phys. 106 4907
[35]	Repo P, Talvitie H, Li S, Skarp J, Savin H 2011 Energy Procedia 8 681
[36]	Xia Y, Liu B W, Liu J, Shen Z N, Li C B 2011 Solar Energy 85 1574
[37]	Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2010 59 5777]
[38]	Zhou C L, Li X D, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2011 Acta Phys. Sin. 60 038201 (in Chinese) [周春兰, 励旭东, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2011 60 038201]
[39]	Shen Z N, Liu B W, Xia Y, Liu J, Li C B, Chen B 2011 Research and Progress of SSE 31 387 (in Chinese) [沈泽南, 刘邦武, 夏洋, 刘杰, 李超波, 陈波 2011 固体电子学研究与进展 31 387]
[40]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[41]	Lüder T, Hahn G, Terheiden B 2011 Energy Procedia 8 660

施引文献

[1]	Aberle A G 2000 Progress in Photovoltaics: Research and Applications 8 473
[2]	Dauwe S, Schmidt J, Hezel R 2002 Photovoltaic Specialists Conference New Orleans, Louisiana, May 21-24, 2002 p1246
[3]	Schmidt J, Merkle A, Brendel R, Hoex B, van de Sanden M C M, Kessels W M M 2008 Progress in Photovoltaics: Research and Applications 16 461
[4]	Hodson C, Kessels E 2009 Photovoltaics World 9 17
[5]	Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 2112
[6]	Wu L H, Zhang X Z, Yu Y, Wan C H, Tan X Y 2011 Acta Phys. Sin. 60 7807 (in Chinese) [吴利华, 章晓中, 于奕, 万蔡华, 谭新玉 2011 60 7807]
[7]	Benick J, Hoex B, van de Sanden M C M, Kessels W M M, Schultz O 2008 Appl. Phys. Lett. 92 3504
[8]	Schmidt J, Werner F, Veith B, Zielke D, Bock R, Tiba V, Poodt P, Roozeboom F, Andrew Li, Cuevas A, Brendel R 2010 25th European Photovoltaic Solar Energy Conference Valencia, Spain, September 6-10, 2010 p1130
[9]	Lu H L, Xu M, Ding S J, Ren J, Zhang W 2006 Journal of Inorganic Materials 21 1217 (in Chinese) [卢红亮, 徐敏, 丁士进, 任杰, 张卫 2006 无机材料学报 21 1217]
[10]	Bakke J R, Pickrahn K L, Brennan T P, Bent S F 2011 Nanoscale 3 3482
[11]	Schmidt J, Merkle A, Hoex B, van de Sanden M C M, Kessels W M M, Brendel R 2008 Photovoltaic Specialists Conference, 33rd IEEE San Diego, California USA, May 11-16, 2008 p1
[12]	George S M 2010 Chem. Rev. 110 111
[13]	Langereis E, Keijmel J, van de Sanden M C M, Kessels W M M 2008 Appl. Phys. Lett. 92 1904
[14]	Profijt H B, Potts S E, van de Sanden M C M, Kessels W M M 2011 J. Vac. Sci. Technol. A 29 801
[15]	Suntola T, Antson J (U.S. Patent) 4058430 [1977-11-15]
[16]	Werner F, Stals W, Görtzen R, Veith B, Brendel R, Schmidt J 2011 Energy Procedia 8 301
[17]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A D 2010 Advanced Materials 22 3564
[18]	Hoex B, Gielis J J H, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3703
[19]	Saint-Cast P, Youn-Ho Heo, Billot E, Olwal P, Hofmann M, Rentsch J, Glunz S W, Preu R 2011 Energy Procedia 8 642
[20]	Renault O, Gosset L G, Rouchon D, Ermolieff A 2002 J. Vac. Sci. Technol. A 20 1867
[21]	Benick J, Richter A, Li T T, Grant N E, Mclntosh K R, Ren Y, Weber K J, Hermle M, Glunz S W 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p891
[22]	Lucovsky G, Wu Y, Niimi H, Misra V, Phillips J C 1999 Appl. Phys. Lett. 74 2005
[23]	Gielis J J H, Hoex B, van de Sanden M C M, Kessels W M M 2008 J. Appl. Phys. 104 3701
[24]	Kimoto K, Matsui Y, Nabatame T, Yasuda T, Mizoguchi T 2003 Appl. Phys. Lett. 83 4306
[25]	Matsunaga K 2003 Phys. Rev. B 68 5110
[26]	Peacock P W, Robertson J 2003 Appl. Phys. Lett. 83 2025
[27]	Johnson R S, Lucovsky G, Baumvol I 2001 J. Vac. Sci. Technol. A 19 1353
[28]	Schmidt J, Veith B, Werner F, Zielke D, Brendel R 2010 Photovoltaic Specialists Conference, 35th IEEE Honolulu, HI USA, June 20-25, 2010 p885
[29]	Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Physica Status Solidi (RRL) 4 10
[30]	Werner F, Veith B, Zielke D, Kühnemund L, Tegenkamp C 2011 J. Appl. Phys. 109 3701
[31]	Richter A, Benick J, Hermle M, Glunz S W 2011 Physica Status Solidi (RRL) 5 202
[32]	Richter A, Benick J, Kalio A, Seiffe J, Hörteis M, Hermle M, Glunz S W 2011 Energy Procedia 8 479
[33]	Veith B, Werner F, Zielke D, Brendel Rolf, Schmidt J 2011 Energy Procedia 8 307
[34]	Dingemans G, Engelhart P, Seguin R, Einsele F, Hoex B, van de Sanden M C M, Kessels W M M 2009 J. Appl. Phys. 106 4907
[35]	Repo P, Talvitie H, Li S, Skarp J, Savin H 2011 Energy Procedia 8 681
[36]	Xia Y, Liu B W, Liu J, Shen Z N, Li C B 2011 Solar Energy 85 1574
[37]	Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2010 59 5777]
[38]	Zhou C L, Li X D, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2011 Acta Phys. Sin. 60 038201 (in Chinese) [周春兰, 励旭东, 王文静, 赵雷, 李海玲, 刁宏伟, 曹晓宁 2011 60 038201]
[39]	Shen Z N, Liu B W, Xia Y, Liu J, Li C B, Chen B 2011 Research and Progress of SSE 31 387 (in Chinese) [沈泽南, 刘邦武, 夏洋, 刘杰, 李超波, 陈波 2011 固体电子学研究与进展 31 387]
[40]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[41]	Lüder T, Hahn G, Terheiden B 2011 Energy Procedia 8 660

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