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Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics

Bi Zhi-Wei Feng Qian Hao Yue Yue Yuan-Zheng Zhang Zhong-Fen Mao Wei Yang Li-Yuan Hu Gui-Zhou

Citation:

Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics

Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou
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  • Abstract views:  9742
  • PDF Downloads:  1439
  • Cited By: 0
Publishing process
  • Received Date:  27 December 2008
  • Accepted Date:  24 February 2009
  • Published Online:  05 May 2009

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