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In this paper, we present the properties of new type of material ZnO and the ZnO films prepared on sapphire substrate through atomic layer deposition (ALD). In experiment, we use N2 as the carrier, DEZn and DI-water as the precursors. The deposition temperature is 180℃. The value of Zn/O could be modified through changing the dose of DEZn. Furthermore, we investigate the influences of Zn/O value on the thickness, growth rate, crystalline property, surface morphology, three-dimensional structure and roughness of the ZnO film prepared by the ALD method.
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Keywords:
- ZnO /
- atomic layer deposition /
- Zn/O
[1] Yang T Y, Kong C Y, Ruan H B, Qin G P, Li W J, Liang W W, Meng X D, Zhao Y H, Fang L, Cui Y T 2013 Acta Phys. Sin. 62 037703 (in Chinese) [杨天勇, 孔春阳, 阮海波, 秦国平, 李万俊, 梁薇薇, 孟祥丹, 赵永红, 方亮, 崔玉亭 2013 62 037703]
[2] Zhang Z L, Zheng G, Qu F Y, Wu X 2012 Chin. Phys. B 21 098104
[3] Suk L, Yong H, I m, Yo B H 2005 Korean J. Chem. Eng. 22 334
[4] Wang J C, Weng W T, Tsai M Y, Lee M K, Horong S F, Perng T P, Kei C C, Yu C C, Meng H F 2010 J. Mater. Chem. 20 862
[5] Himchan O, Sang H K P, Min K R, Chi S H, Shinhyuk Y, Oh S K 2012 ETRI Journal 34 283
[6] Ke J Q, Sun C, Bao Z, Lin C, Shi J D, He L L, Qing Q S, David W Z, Zhen C 2012 Appl. Surf. Sci. 258 4657
[7] Manik K G, Cheol H C 2006 Chem. Phys. Lett. 426 365
[8] Guziewicz E, Godlewski M, Wachnicki L, Krajewski T A, Luka G, Gieraltowska S, Jakiela R, Stonert A, Lisowski W, Krawczyk M, Sobczak J W, Jablonski A 2012 Semicond. Sci. Technol. 27 1
[9] Krajewski T, Guziewicz E, Godlewski M, Wachnicki L 2009 Microelectron. J. 40 293
[10] Zhang X, Liu B W, Xia Y, Li C B, Liu J, Shen Z N 2012 Acta Phys. Sin. 61 187303 (in Chinese) [张祥, 刘邦武, 夏洋, 李超波, 刘杰, 沈泽南 2012 61 187303]
[11] Hisao M, Aki M, Takahiro Y, Naoki Y, Tetsuya Y 2009 Thin Solid Films 517 3138
[12] Lim S J, Soonju K, Kim H 2008 Thin Solid Films 516 1523
[13] Kohan A F, Ceder G, Morgan D 2008 Phys. Rev. B 61 1
[14] Ping Y L, Jyh R G, Ping C L, Tai Y L, Dong Y L, Der Y L, Hung J L, Ta C L, Kuo J C, Wen J L 2008 J. Crystal Growth 310 3024
[15] Liu C H, Chang R P H 2002 J. Chem. Phys. 116 8139
[16] Zhou X F, Wu C, Tang Z Y, Kong C G, Qiu B B, Yang Y, Lu G W 2012 J. Synthetic Crystals 41 793 (in Chinese) [周雪飞, 吴冲, 唐朝云, 孔垂岗, 邱贝贝, 杨云, 卢贵武 2012 人工晶体学报 41 793]
[17] Chen B, Han B, Zhou C G, Wu J P 2009 J. Earth Sci. 34 636 (in Chinese) [陈蓓, 韩波, 周成冈, 吴金平 2009 地球科学 34 636]
[18] Gu J H, Zhou Y Q, Zhu M F, Li G H, Ding K, Zhou B Q, Liu F Z, Liu J L, Zhang Q F 2005 Acta Phys. Sin. 54 1890 (in Chinese) [谷金花, 周玉琴, 朱美芳, 李国华, 丁琨, 周炳卿, 刘丰珍, 刘金龙, 张群芳 2005 54 1890]
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[1] Yang T Y, Kong C Y, Ruan H B, Qin G P, Li W J, Liang W W, Meng X D, Zhao Y H, Fang L, Cui Y T 2013 Acta Phys. Sin. 62 037703 (in Chinese) [杨天勇, 孔春阳, 阮海波, 秦国平, 李万俊, 梁薇薇, 孟祥丹, 赵永红, 方亮, 崔玉亭 2013 62 037703]
[2] Zhang Z L, Zheng G, Qu F Y, Wu X 2012 Chin. Phys. B 21 098104
[3] Suk L, Yong H, I m, Yo B H 2005 Korean J. Chem. Eng. 22 334
[4] Wang J C, Weng W T, Tsai M Y, Lee M K, Horong S F, Perng T P, Kei C C, Yu C C, Meng H F 2010 J. Mater. Chem. 20 862
[5] Himchan O, Sang H K P, Min K R, Chi S H, Shinhyuk Y, Oh S K 2012 ETRI Journal 34 283
[6] Ke J Q, Sun C, Bao Z, Lin C, Shi J D, He L L, Qing Q S, David W Z, Zhen C 2012 Appl. Surf. Sci. 258 4657
[7] Manik K G, Cheol H C 2006 Chem. Phys. Lett. 426 365
[8] Guziewicz E, Godlewski M, Wachnicki L, Krajewski T A, Luka G, Gieraltowska S, Jakiela R, Stonert A, Lisowski W, Krawczyk M, Sobczak J W, Jablonski A 2012 Semicond. Sci. Technol. 27 1
[9] Krajewski T, Guziewicz E, Godlewski M, Wachnicki L 2009 Microelectron. J. 40 293
[10] Zhang X, Liu B W, Xia Y, Li C B, Liu J, Shen Z N 2012 Acta Phys. Sin. 61 187303 (in Chinese) [张祥, 刘邦武, 夏洋, 李超波, 刘杰, 沈泽南 2012 61 187303]
[11] Hisao M, Aki M, Takahiro Y, Naoki Y, Tetsuya Y 2009 Thin Solid Films 517 3138
[12] Lim S J, Soonju K, Kim H 2008 Thin Solid Films 516 1523
[13] Kohan A F, Ceder G, Morgan D 2008 Phys. Rev. B 61 1
[14] Ping Y L, Jyh R G, Ping C L, Tai Y L, Dong Y L, Der Y L, Hung J L, Ta C L, Kuo J C, Wen J L 2008 J. Crystal Growth 310 3024
[15] Liu C H, Chang R P H 2002 J. Chem. Phys. 116 8139
[16] Zhou X F, Wu C, Tang Z Y, Kong C G, Qiu B B, Yang Y, Lu G W 2012 J. Synthetic Crystals 41 793 (in Chinese) [周雪飞, 吴冲, 唐朝云, 孔垂岗, 邱贝贝, 杨云, 卢贵武 2012 人工晶体学报 41 793]
[17] Chen B, Han B, Zhou C G, Wu J P 2009 J. Earth Sci. 34 636 (in Chinese) [陈蓓, 韩波, 周成冈, 吴金平 2009 地球科学 34 636]
[18] Gu J H, Zhou Y Q, Zhu M F, Li G H, Ding K, Zhou B Q, Liu F Z, Liu J L, Zhang Q F 2005 Acta Phys. Sin. 54 1890 (in Chinese) [谷金花, 周玉琴, 朱美芳, 李国华, 丁琨, 周炳卿, 刘丰珍, 刘金龙, 张群芳 2005 54 1890]
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