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Aiming at the main problem encountered in the research of radioisotope microbattery based on β radio-voltaic effect-enhancement of energy transfer efficiency and radiation damage as mutually constraining sides of a contradiction, an investigation of radiation-induced defects in different silicon wafers by low-energy electron irradiation was carried out and the electrical characteristic measurement for two types of PIN structures indicated that P+I (N-) N+ device in I zone with a dopant concentration of 2× 1012 cm-3 agreed with the predicted result of P, N type silicon radiation damage effect. This was then taken as the prototype device, on which test of 63Ni radiation output characteristics was performed. The test result was compared with the experimental data of Wisconsin University and the major factors causing low energy transfer efficiency were analysed. Adoption of three-dimensional PIN junction structure, increasing the proportion of energy deposition in depletion region, matching I (N-) zone width and deposition depth and controlling the leak current under an order of magnitude of Picoampere were considered to enhance the energy transfer efficiency, based on which energy transfer structure was designed and ultimately structure parameters such as multi-hole PIN structure, radiation source thickness, depletion region width were determined, thus the energy transfer structure optimization was accomplished.
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Keywords:
- 63Ni source /
- energy conversion structure /
- radiation effect /
- betavoltaic
[1] Zou Y, Huang N K 2006 NUCLEAR TECHNIQUES 29
[2] Kavetskiya A, Yakubovaa G, Yousafa S M, Bower K 2011 Applied Radiation and Isotopes 69 744
[3] Lua M, Zhang G G, Fu K, Yu G H, Su D, Hu J F 2011 Energy Conversion and Management 52 1955
[4] Chandrashekhar M V S, Christopher I Thomas, Hui L 2006 Appl. Phys. Lett. 88 033506
[5] Qiao D Y, Chen X J, Yong R, Yuan W Z 2011 Journal of Microelectro mechanical Systems 20 685
[6] Li X Y, Ren Y, Chen X J, Qiao D Y, Yuan W Z 2011 Journal of Radioanalytical and Nuclear Chemistry 287 173
[7] Qiao D Y, Yuan W Z, Gao P, Yao X W, Zang B, Zhang L, Guo H 2008 Chin. Phys. Lett. 25 3798
[8] Ohyama H, Nakabayashi M, Simoen E, Claeys C, Tanaka K, Kobayashi K 2002 Nucl. Instrum. Methods Phys. Res. Sect. B 186 176
[9] Liu C S, Wu D X, Zhao L L 2010 Nuclear Instruments and Methods in Physics Research Section B 268 1146
[10] Kleider J P, Chouffot R, Gudovskikh A S, Labrune M, Ribeyron P J, Brüggemann R 2009 Thin Solid Films 517 6386
[11] Boesch H E, McLean F B 1985 IEEE Trans. Nucl. Sci. 32 39403945
[12] Gao H, Wang H Y, Yuan Y G 2012 Rare Metals 31 289
[13] Gao H, Li H, Lal A, Blanchard J 2008 Solid-State and Integrated-Circuit Technology 20 2365
[14] Zine-El-Abidine Chaoui 2008 Nucl. Instrum. Methods Phys. Res. Sect. B 266 4976
[15] Wei S, Nazir P, Karl D, Larry L, Philippe M, Faucher A 2005 Advanced Materials 17 1230
[16] Guo H, Yang H, Zhang Y 2007 IEEE 20th International Conference 21 867
[17] Qiao D Y, Chen X J, Ren Y, Zang B, Yuan W Z 2011 Acta Phys. Sin. 60 020701 (in Chinese) [乔大勇, 陈雪娇, 任勇, 藏博, 苑伟政 2011 60 020701]
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[1] Zou Y, Huang N K 2006 NUCLEAR TECHNIQUES 29
[2] Kavetskiya A, Yakubovaa G, Yousafa S M, Bower K 2011 Applied Radiation and Isotopes 69 744
[3] Lua M, Zhang G G, Fu K, Yu G H, Su D, Hu J F 2011 Energy Conversion and Management 52 1955
[4] Chandrashekhar M V S, Christopher I Thomas, Hui L 2006 Appl. Phys. Lett. 88 033506
[5] Qiao D Y, Chen X J, Yong R, Yuan W Z 2011 Journal of Microelectro mechanical Systems 20 685
[6] Li X Y, Ren Y, Chen X J, Qiao D Y, Yuan W Z 2011 Journal of Radioanalytical and Nuclear Chemistry 287 173
[7] Qiao D Y, Yuan W Z, Gao P, Yao X W, Zang B, Zhang L, Guo H 2008 Chin. Phys. Lett. 25 3798
[8] Ohyama H, Nakabayashi M, Simoen E, Claeys C, Tanaka K, Kobayashi K 2002 Nucl. Instrum. Methods Phys. Res. Sect. B 186 176
[9] Liu C S, Wu D X, Zhao L L 2010 Nuclear Instruments and Methods in Physics Research Section B 268 1146
[10] Kleider J P, Chouffot R, Gudovskikh A S, Labrune M, Ribeyron P J, Brüggemann R 2009 Thin Solid Films 517 6386
[11] Boesch H E, McLean F B 1985 IEEE Trans. Nucl. Sci. 32 39403945
[12] Gao H, Wang H Y, Yuan Y G 2012 Rare Metals 31 289
[13] Gao H, Li H, Lal A, Blanchard J 2008 Solid-State and Integrated-Circuit Technology 20 2365
[14] Zine-El-Abidine Chaoui 2008 Nucl. Instrum. Methods Phys. Res. Sect. B 266 4976
[15] Wei S, Nazir P, Karl D, Larry L, Philippe M, Faucher A 2005 Advanced Materials 17 1230
[16] Guo H, Yang H, Zhang Y 2007 IEEE 20th International Conference 21 867
[17] Qiao D Y, Chen X J, Ren Y, Zang B, Yuan W Z 2011 Acta Phys. Sin. 60 020701 (in Chinese) [乔大勇, 陈雪娇, 任勇, 藏博, 苑伟政 2011 60 020701]
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