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Due to the use of heavily doped N type silicon substrate, the nuclear micro-battery based on silicon PN diode suffers from the small minority carrier life-time and small depletion region width, and can not achieve high energy transfer efficiency. A nuclear micro-battery utilizing silicon PIN diode as the energy transfer structure was demonstrated with achieves higher electrical power output. Theoretical model was built to predict the power output performance of this kind of micro-nuclear battery and structure optimization was performed in terms of the stopping range of beta particles, the depletion region width, the minority carrier life-time and the body resistance. Prototypes of PIN energy transfer structure were fabricated and were illuminated by using beta radioisotopes 63Ni,147Pm and alpha radioisotope 241Am as the radiation sources, and proved to be effective to improve the energy transfer performance.
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Keywords:
- micro-nuclear battery /
- betavoltaics /
- MicroElectroMechanical systems /
- PIN diode
[1] Li H, Lal A, Blanchard J, Henderson D 2002 J. Appl. Phys. 92 1122
[2] Rinehart G H 2001 Prog. Nucl. Energ. 39 305
[3] Chandrashekhar M V S, Thomas C I, Li H, Spencer M G, Lai A 2006 Appl. Phys. Lett. 88 033506
[4] Lee S K, Son S H, Kim K, Park J W, Lim H, Lee J M, Chung E S 2009 Appl. Radiat. Isotopes 67 1234
[5] Qiao D Y, Yuan W Z, Gao P, Yao X W, Zang B, Zhang L, Guo H, Zhang H J 2008 Chin. Phys. Lett. 25 3798
[6] Tian R Y, Yang R Q, Peng J B, Cao Y 2005 Chin. Phys. 14 1032
[7] Yuan Y J, Hou G F, Xue J M, Han X Y, Liu Y Z, Yang X Y, Liu L J, Dong P, Zhao Y, Geng X H 2008 Acta Phys. Sin. 57 3892 (in Chinese) [袁育杰、侯国付、薛俊明、韩晓艳、刘云周、杨兴云、刘丽杰、董 培、赵 颖、耿新华 2008 57 3892]
[8] Guo H, Li H, Lal A, Blanchard J 2008 Proceeding of the 9th IEEE International Conference on Solid State and Integrated Circuit Technology Beijing, China, October 20—23, 2008 p2365
[9] Guo H, Yang H, Zhang Y 2007 Proceeding of the 20th IEEE International Conference on MEMS Hyogo, Japan, January 21—25, 2007 p867
[10] Lutz G 1999 Semiconductor Radiation Detectors (Berlin Heidelberg: Springer-Verlag) p95
[11] Lu X T 1981 Nuclear Physics (Beijing: Atomic Energy Press) p 104 (in Chinese) [卢希庭 1981 原子核物理 (北京: 原子能出版社) 第104页]
[12] Liu Q C 2005 Overview of Nuclear Science (Harbin: Harbin Institute of Technology Press) p 28 (in Chinese) [刘庆成 2005 核科学概论 (哈尔滨: 哈尔滨工业大学出版社) 第28页]
[13] Dong P 2008 MS dissertation (Xi’an: Northwestern Polytechnical University) (in Chinese) [董 鹏 2008 硕士论文 (西安: 西北工业大学)]
[14] Kyuregyan A S 2000 Semiconductors 34 835
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[1] Li H, Lal A, Blanchard J, Henderson D 2002 J. Appl. Phys. 92 1122
[2] Rinehart G H 2001 Prog. Nucl. Energ. 39 305
[3] Chandrashekhar M V S, Thomas C I, Li H, Spencer M G, Lai A 2006 Appl. Phys. Lett. 88 033506
[4] Lee S K, Son S H, Kim K, Park J W, Lim H, Lee J M, Chung E S 2009 Appl. Radiat. Isotopes 67 1234
[5] Qiao D Y, Yuan W Z, Gao P, Yao X W, Zang B, Zhang L, Guo H, Zhang H J 2008 Chin. Phys. Lett. 25 3798
[6] Tian R Y, Yang R Q, Peng J B, Cao Y 2005 Chin. Phys. 14 1032
[7] Yuan Y J, Hou G F, Xue J M, Han X Y, Liu Y Z, Yang X Y, Liu L J, Dong P, Zhao Y, Geng X H 2008 Acta Phys. Sin. 57 3892 (in Chinese) [袁育杰、侯国付、薛俊明、韩晓艳、刘云周、杨兴云、刘丽杰、董 培、赵 颖、耿新华 2008 57 3892]
[8] Guo H, Li H, Lal A, Blanchard J 2008 Proceeding of the 9th IEEE International Conference on Solid State and Integrated Circuit Technology Beijing, China, October 20—23, 2008 p2365
[9] Guo H, Yang H, Zhang Y 2007 Proceeding of the 20th IEEE International Conference on MEMS Hyogo, Japan, January 21—25, 2007 p867
[10] Lutz G 1999 Semiconductor Radiation Detectors (Berlin Heidelberg: Springer-Verlag) p95
[11] Lu X T 1981 Nuclear Physics (Beijing: Atomic Energy Press) p 104 (in Chinese) [卢希庭 1981 原子核物理 (北京: 原子能出版社) 第104页]
[12] Liu Q C 2005 Overview of Nuclear Science (Harbin: Harbin Institute of Technology Press) p 28 (in Chinese) [刘庆成 2005 核科学概论 (哈尔滨: 哈尔滨工业大学出版社) 第28页]
[13] Dong P 2008 MS dissertation (Xi’an: Northwestern Polytechnical University) (in Chinese) [董 鹏 2008 硕士论文 (西安: 西北工业大学)]
[14] Kyuregyan A S 2000 Semiconductors 34 835
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