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As is well known, the base Ge composition can improve the DC characteristics, frequency characteristics and noise characteristics of SiGe HBTs. However, the reports about the effects of Ge profile on HBTs thermal characteristics are rare. In this paper, by use of SILVACO simulator, the effects of different Ge gradients on thermal and electrical characteristics of SiGe HBT are investigated. It is found that under the same total Ge amount condition, as Ge gradient increases, the fT of device increases significantly, the uniformity of temperature distribution becomes better, the influences of temperature on the and fT are weakened, but the gain becomes smaller. For the device with uniform Ge composition, the is high, but the influence of temperature on the is enormous, the uniformity of temperature distribution is poor. Based on these results, in order to make a tradeoff among thermal, gain and frequency characteristics, a novel Ge composition structure with the combination of the uniform and graded Ge composition is proposed. The results show that the novel Ge composition structure SiGe HBT has good performances lower peak temperature, better uniform temperature profile, smaller variabilities of and fT with temperature, sufficient high and fT compared with the uniform Ge composition device. These new results provide valuable reference for the device thermal design, and are supplemental to the research and application of SiGe HBTs.
[1] Comeau J P, Najafizadeh L, Andrews J M, Gnana A P, Cressler J D 2007 IEEE Microw. Wirel Compon. Lett. 17 349
[2] Ma L, Gao Y 2009 Chin. Phys. B 18 303
[3] William E Ansley, John D Cressler, David M Richey 1998 IEEE Transactions on Microwave Theory and Techniques (USA May, 1998) 46 653
[4] Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[5] Xiao Y, Zhang W R, Jin D Y, Chen L, Wang R Q, Xie H Y 2011 Acta Phys. Sin. 60 044402 (in Chinese) [肖盈, 张万荣, 金冬月, 陈亮, 王任卿, 谢红云 2011 60 044402]
[6] Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q, Ding C B 2011 Acta Phys. Sin. 60 078501 (in Chinese) [陈亮, 张万荣, 金冬月, 谢红云, 肖盈, 王任卿, 丁春宝 2011 60 078501]
[7] Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q 2011 Chin. Phys. B 20 018105
[8] Rahim A F A, Hashim M R, Rahim A I A 2002 IEEE International Conference on Semiconductor Electronics Proceedings (ICSE) USA, Florida Jun, 2002 2 365
[9] Wang D Q, Ruan G, Xue L C 1999 Research&Progress of SSE 19190
[10] Song J,Yuan J S 1997 Solid-State Electronics (USA, Florida December, 1997) 41 1957
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[1] Comeau J P, Najafizadeh L, Andrews J M, Gnana A P, Cressler J D 2007 IEEE Microw. Wirel Compon. Lett. 17 349
[2] Ma L, Gao Y 2009 Chin. Phys. B 18 303
[3] William E Ansley, John D Cressler, David M Richey 1998 IEEE Transactions on Microwave Theory and Techniques (USA May, 1998) 46 653
[4] Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[5] Xiao Y, Zhang W R, Jin D Y, Chen L, Wang R Q, Xie H Y 2011 Acta Phys. Sin. 60 044402 (in Chinese) [肖盈, 张万荣, 金冬月, 陈亮, 王任卿, 谢红云 2011 60 044402]
[6] Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q, Ding C B 2011 Acta Phys. Sin. 60 078501 (in Chinese) [陈亮, 张万荣, 金冬月, 谢红云, 肖盈, 王任卿, 丁春宝 2011 60 078501]
[7] Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q 2011 Chin. Phys. B 20 018105
[8] Rahim A F A, Hashim M R, Rahim A I A 2002 IEEE International Conference on Semiconductor Electronics Proceedings (ICSE) USA, Florida Jun, 2002 2 365
[9] Wang D Q, Ruan G, Xue L C 1999 Research&Progress of SSE 19190
[10] Song J,Yuan J S 1997 Solid-State Electronics (USA, Florida December, 1997) 41 1957
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