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The ferroelectric hysteresis loops of 63PbTiO3-37BiScO3 ceramics are measured under sinusoidal electric field varying from 5 to 55 kV/cm in a frequency range from 0.1 to 100 Hz. The fitting results show that the logarithm of remanent polarization and the logarithm of coercive electric field are both linearly related to electric field in the first and third field regions, but not in the second region. The three-stage behavior is distinct from the existing two-stage behavior, and it can be attributed to the dependence of ferroelectric polarization behavior on field stage.
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Keywords:
- ferroelectric ceramics /
- polarization reversal /
- hysteresis loop
[1] Uchino K 2000 Ferroelectric Devices (New York: Marcel Dekker)
[2] Scott J F 1997 Thin Film Ferroelectric Materials and Devices (Boston: Kluwer Academic)
[3] Zhang Y F, Wang C L, Zhao M L, Li J C, Zhang R Z 2009 Chin. Phys. B 18 1665
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[9] Wang Y L 2003 Properties and Applications of Functional Ceramics (Beijing: Science Press) p16 (in Chinese) [王永龄 2003 功能陶瓷性能与应用 (北京:科学出版社) 第16页]
[10] Yimnirun R, Laosiritaworn Y, Wongsaenmai S, Ananta S 2006 Appl. Phys. Lett. 89 162901
[11] Yimnirun R, Wongmaneerung R, Wongsaenmai S, Ngamjarurojana A, Ananta S, Laosiritaworn Y 2007 Appl. Phys. Lett. 90 112908
[12] Wongdamnern N, Ngamjarurojana A, Laosiritaworn Y, Ananta S, Yimnirun R 2009 J. Appl. Phys. 105 044109
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[16] Eitel R E, Randall C A, Shrout T R, Park S E 2002 Jpn. J. Appl. Phys. 41 2099
[17] Chen S, Dong X L, Mao C L, Cao F 2006 J. Am. Ceram. Soc. 89 3270
[18] Kamel T M, Kools F X N M, With G 2007 J. Eur. Ceram. Soc. 27 2471
[19] Hlbling T, Sylemezo Agˇ lu N, Waser R 2002 J. Electroceram. 9 87
[20] Zhou B, Zhan H, Liu G, Chen Y L 2009 Acta Phys. Sin. 58 2762 (in Chinese) [周 波、 詹 鹤、 刘 刚、 陈云琳 2009 58 2762]
[21] Chen J H, Qu S B, Wei X Y, Xu Z, Zhu L H 2009 Acta Phys. Sin. 58 554 (in Chinese) [陈建华、 屈绍波、 魏晓勇、 徐 卓、 朱林户 2009 58 554]
[22] Viehland D, Chen Y H 2000 J. Appl. Phys. 88 6696
[23] Chen Y H, Viehland D 2000 Appl. Phys. Lett. 77 133
[24] Randall C A, Eitel R E, Shrout T R, Woodward D I, Reaney I M 2003 J. Appl. Phys. 93 9271
[25] Lente M H, Picinin A, Rino J P, Eiras J A 2004 J. Appl. Phys. 95 2646
[26] Lente M H, Eiras J A 2001 J. Appl. Phys. 89 5093
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[1] Uchino K 2000 Ferroelectric Devices (New York: Marcel Dekker)
[2] Scott J F 1997 Thin Film Ferroelectric Materials and Devices (Boston: Kluwer Academic)
[3] Zhang Y F, Wang C L, Zhao M L, Li J C, Zhang R Z 2009 Chin. Phys. B 18 1665
[4] Chen X F, Li H M, Li D J, Cao F, Dong X L 2008 Acta Phys. Sin. 57 7298 (in Chinese) [陈学峰、 李华梅、 李东杰、 曹 菲、 董显林 2008 57 7298]
[5] Haertling G H 1999 J. Am. Ceram. Soc. 82 797
[6] Scott J F 2000 Ferroelectric Memories (Berlin: Springer)
[7] Li B S, Zhu Z G, Li G R, Yin Q R, Ding A L 2005 Acta Phys. Sin. 54 939 (in Chinese) [李宝山、 朱志刚、 李国荣、 殷庆瑞、 丁爱丽 2005 54 939]
[8] Li Z Q, Chen M, Shen W B, Li J D 2001 Acta Phys. Sin. 50 2477 (in Chinese) [李智强、 陈 敏、 沈文彬、 李景德 2001 50 2477]
[9] Wang Y L 2003 Properties and Applications of Functional Ceramics (Beijing: Science Press) p16 (in Chinese) [王永龄 2003 功能陶瓷性能与应用 (北京:科学出版社) 第16页]
[10] Yimnirun R, Laosiritaworn Y, Wongsaenmai S, Ananta S 2006 Appl. Phys. Lett. 89 162901
[11] Yimnirun R, Wongmaneerung R, Wongsaenmai S, Ngamjarurojana A, Ananta S, Laosiritaworn Y 2007 Appl. Phys. Lett. 90 112908
[12] Wongdamnern N, Ngamjarurojana A, Laosiritaworn Y, Ananta S, Yimnirun R 2009 J. Appl. Phys. 105 044109
[13] Liu J M, Li H P, Ong C K, Lim L C 1999 J. Appl. Phys. 86 5198
[14] Viehland D, Li J F 2001 J. Appl. Phys. 90 2995
[15] Jullian C, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 1196
[16] Eitel R E, Randall C A, Shrout T R, Park S E 2002 Jpn. J. Appl. Phys. 41 2099
[17] Chen S, Dong X L, Mao C L, Cao F 2006 J. Am. Ceram. Soc. 89 3270
[18] Kamel T M, Kools F X N M, With G 2007 J. Eur. Ceram. Soc. 27 2471
[19] Hlbling T, Sylemezo Agˇ lu N, Waser R 2002 J. Electroceram. 9 87
[20] Zhou B, Zhan H, Liu G, Chen Y L 2009 Acta Phys. Sin. 58 2762 (in Chinese) [周 波、 詹 鹤、 刘 刚、 陈云琳 2009 58 2762]
[21] Chen J H, Qu S B, Wei X Y, Xu Z, Zhu L H 2009 Acta Phys. Sin. 58 554 (in Chinese) [陈建华、 屈绍波、 魏晓勇、 徐 卓、 朱林户 2009 58 554]
[22] Viehland D, Chen Y H 2000 J. Appl. Phys. 88 6696
[23] Chen Y H, Viehland D 2000 Appl. Phys. Lett. 77 133
[24] Randall C A, Eitel R E, Shrout T R, Woodward D I, Reaney I M 2003 J. Appl. Phys. 93 9271
[25] Lente M H, Picinin A, Rino J P, Eiras J A 2004 J. Appl. Phys. 95 2646
[26] Lente M H, Eiras J A 2001 J. Appl. Phys. 89 5093
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